SDED20161T-4R7MS

CYNTEC CO., LTD. 乾坤科技股份有限公司 DOCUMENT : SDED20161T-000 REVISION : A6 PAGE : 1 OF 4 Sealed Choke Coil SDED20161T type
Features ： Low profile 2.0 mm x 1.6 mm x 1.0 mm Low coil resistance with large currents. High magnetic shield construction should actualize high resolution for EMC protection. 100% lead (Pb) free meet RoHS standard
Application Cellular phones, LCD displays, HDDs, DVCs, DSCs, PDAs etc..
Outline Dimensions W Code L Dimensions(mm) L 1.6 ± 0.1 W 2.0 ± 0.1 T 1.0 Max. T Note
：This graph is in regard to outline dimensions spec. For outer appearance, please refer to actual product. Recommend Land Pattern Dimensions The customer shall determine the land dimensions shown below after confirming and safety. B A C A 1.7 B 0.6 C 2.3 Unit : mm Aug., 2018 CYNTEC CO., LTD. 乾坤科技股份有限公司
DOCUMENT : SDED20161T-000 REVISION : A6 PAGE : 2 OF 4 Specifications L0 Inductance ( µH ) @ (0A) Typical SDED20161T-R24MS 0.24 SDED20161T-R47MS Heat Rating Current DC Amps. Idc ( A ) Saturation Current DC Amps. Isat ( A ) Maximum Typical Maximum Typical Maximum 26.5 34.5 4.00 3.60 3.83 3.42 0.47 49 59 2.60 2.34 3.00 2.70 SDED20161T-R68MS 0.68 67 81 2.30 2.05 2.30 2.05 SDED20161T-1R0MS 1.0 87 107 1.70 1.50 2.00 1.80 SDED20161T-1R5MS 1.5 137 164 1.60 1.44 1.65 1.50 SDED20161T-2R2MS 2.2 192 230 1.35 1.22 1.45 1.31 SDED20161T-3R3MS 3.3 243 292 1.05 0.95 1.05 0.95 SDED20161T-4R7MS 4.7 322 387 0.95 0.85 0.95 0.80 SDED20161T-6R8MS 6.8 610 732 0.62 0.56 0.80 0.72 SDED20161T-100MS 10.0 932 1,119 0.47 0.42 0.62 0.55 SDED20161T-150MS 15.0 1,580 1,895 0.42 0.38 0.50 0.45 SDED20161T-220MS 22.0 2,365 2,838 0.37 0.33 0.45 0.40 Part Number Rdc ( mΩ) ： **：Inductance Tolerance ± 20% Note 1.： All test data is referenced to 25℃ ambient. Note 2.： Test Condition:1MHz, 1.0Vrms Note 3.： Idc : DC current (A) that will cause an approximate △T of 40℃ Note 4.： Isat : DC current (A) that will cause L0 to drop approximately 30% Note 5.： Operating Temperature Range -55℃ to + 125℃ Note 6.： The part temperature (ambient + temp rise) should not exceed 125℃ under the worst case operating * If you require another part number please contact with us. conditions. Circuit design, component placement, PCB trace size and thickness, airflow and other cooling provision all affect the part temperature. Part temperature should be verified in the end application. Note 7. ： The rated current as listed is either the saturation current or the heating current depending on which value is lower. Aug., 2018 CYNTEC CO., LTD. 乾坤科技股份有限公司 PAGE : 3 OF 4 75 0.50 0.20 60 TEMP. RISE( ℃) 45 TEMP. RISE( 15 0.10 0 0.00 2.0 2.5 3.0 3.5 DC BIAS(Amps) 4.0 4.5 5.0 SDED20161T-R68MS 0.84 0.70 100 1.20 80 1.00 0.56 60 INDUCTANCE(uH) 0.42 TEMP. RISE( ℃） 40 0.28 ℃ 20 0.14 0.00 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 0 0.4 0.8 1.2 80 0.60 TEMP. RISE( 40 0.60 ℃ 20 0.30 0.00 1.0 1.2 1.4 0 1.6 1.8 SDED20161T-2R2MS 50 1.80 1.35 INDUCTANCE(µH) 40 TEMP. RISE( 30 ℃) 0.90 20 0 0.0 0.2 0.4 0.6 0.8 TEMP. RISE( ℃) 1.40 50 40 30 20 0.70 0.00 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 DC BIAS(Amps) ℃ INDUCTANCE(µH) 2.10 1.4 1.6 1.8 70 60 4.50 TEMP. RISE( ) INDUCTANCE(µH) INDUCTANCE(µH) 1.2 SDED20161T-4R7MS 5.40 80 60 2.80 1.0 DC BIAS(Amps) 70 3.50 ℃ 10 0.00 2.0 SDED20161T-3R3MS 70 60 DC BIAS(Amps) 4.20 ℃ 20 0.45 0 0.8 40 2.25 INDUCTANCE(µH) ℃) 0.6 ℃) 0.40 2.70 TEMP. RISE( ) 60 INDUCTANCE(µH) 0.4 60 INDUCTANCE(µH) 0.00 100 1.20 0.2 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 80 0.0 4.0 DC BIAS(Amps) 1.50 TEMP. RISE( 3.6 0.80 3.3 SDED20161T-1R5MS 0.90 3.2 SDED20161T-1R0MS DC BIAS(Amps) 1.80 1.6 2.0 2.4 2.8 DC BIAS(Amps) 0.20 0 0.0 40 ℃ 20 0.0 5.5 INDUCTANCE(µH) 1.5 ℃) 0.20 0.05 1.0 60 INDUCTANCE(µH) 0.30 30 0.5 80 0.40 0.10 0.0 100 TEMP. RISE( ) 0.15 TEMP. RISE( ) INDUCTANCE(µH) ℃ SDED20161T-R47MS TEMP. RISE( ) 0.25 TEMP. RISE( ) INDUCTANCE(µH) : A6 TEMP. RISE( ) 0.60 INDUCTANCE(µH) 90 SDED20161T-R24MS 0.00 INDUCTANCE(uH) REVISION Current Characteristic 0.30 INDUCTANCE(µH) : SDED20161T-000 50 3.60 2.70 INDUCTANCE(µH) 40 TEMP. RISE( 30 ℃) 1.80 10 0.90 0 0.00 20 ℃ TEMP. RISE( )
DOCUMENT 10 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 DC BIAS(Amps) Aug., 2018 CYNTEC CO., LTD. 乾坤科技股份有限公司 4.20 TEMP. RISE( ℃) 40 2.80 ℃ 20 1.40 0.2 0.3 0.4 0.5 0.6 0.7 DC BIAS(Amps) 0.8 0.9 SDED20161T-150MS 18.0 12.0 60 INDUCTANCE(µH) 9.0 TEMP. RISE( ℃) 40 6.0 3.0 0.0 0.00 0.08 0.16 0.24 0.32 0.40 DC BIAS(Amps) 0.48 0.56 0.64 SDED20161T-100MS 100 80 60 INDUCTANCE(µH) 6.0 TEMP. RISE( ℃) 40 4.0 0 0.1 0.2 0.3 0.4 0.5 DC BIAS(Amps) 0.6 0.7 0.8 SDED20161T-220MS 27.0 ℃ 100 22.5 80 18.0 60 INDUCTANCE(µH) 13.5 TEMP. RISE( ℃) 40 9.0 20 4.5 0 0.0 ℃ 20 0.0 80 : 4 OF 4 0.0 100 15.0 PAGE 8.0 1.0 INDUCTANCE(µH) 0.1 : A6 2.0 0 0.0 REVISION TEMP. RISE( ) 60 INDUCTANCE(µH) : SDED20161T-000 20 0 0.0 0.1 0.1 0.2 0.2 0.3 0.3 0.4 0.4 0.5 0.5 ℃ TEMP. RISE( ) 10.0 INDUCTANCE(µH) 80 5.60 0.00 INDUCTANCE(µH) 12.0 TEMP. RISE( ) INDUCTANCE(µH) 7.00 100 TEMP. RISE( ) SDED20161T-6R8MS 8.40 DOCUMENT 0.6 DC BIAS(Amps) Aug., 2018