2DD2150R-13

2DD2150R NPN SURFACE MOUNT TRANSISTOR Features N EW PRODUCT • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability SOT89-3L COLLECTOR 2,4 Mechanical Data • • • • • • • Case: SOT89-3L Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Page 3 Ordering Information: See Page 3 Weight: 0.072 grams (approximate) 3E C4 2C 1B TOP VIEW 1 BASE 3 EMITTER Schematic and Pin Configuration Maximum Ratings @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO ICM IC Value 40 20 6 5 3 Unit V V V A A Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C Operating and Storage Temperature Range Symbol PD RθJA Tj, TSTG Value 1 125 -55 to +150 Unit W °C/W °C Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage DC Current Gain SMALL SIGNAL CHARACTERISTICS Transition Frequency Output Capacitance Notes: 1. 2. 3. 4. @TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(SAT) hFE fT Cob Min 40 20 6 ⎯ ⎯ ⎯ 180 ⎯ ⎯ Typ ⎯ ⎯ ⎯ ⎯ ⎯ 0.2 ⎯ 160 28 Max ⎯ ⎯ ⎯ 0.1 0.1 0.5 390 ⎯ ⎯ Unit V V V μA μA V ⎯ MHz pF Conditions IC = 50μA, IE = 0 IC = 1mA, IB = 0 IE = 50μA, IC = 0 VCB = 30V, IE = 0 VEB = 5V, IC = 0 IC = 2A, IB = 0.1A IC = 100mA, VCE = 2V VCE = 2V, IE = -0.1A f = 100MHz VCB = 10V, IE = 0, f = 1MHz No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. DS31148 Rev. 3 - 2 1 of 4 www.diodes.com 2DD2150R © Diodes Incorporated 1.2 2.5 IB = 10mA IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (W) 1.0 2.0 IB = 8mA 0.8 N EW PRODUCT 1.5 IB = 6mA 0.6 1.0 0.4 IB = 4mA 0.2 0.5 IB = 2mA 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) 0 500 450 400 hFE, DC CURRENT GAIN 350 300 250 200 150 100 50 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 3 Typical DC Current Gain vs. Collector Current VCE = 2V TA = -55°C TA = 25°C TA = 150°C TA = 85°C VCE = 2V 0 0.0 1 2 3 4 5 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage 0.4 IC/IB = 20 0 VCE(SAT), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.3 0.2 TA = 150°C 0.1 T A = 85°C TA = 25°C TA = -55°C 10 0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE EMITTER TURN-ON VOLTAGE (V) 1.2 1.0 1.2 IC /IB = 20 1.0 0.8 TA = -55°C 0.8 TA = -55°C 0.6 TA = 25°C 0.6 TA = 25°C TA = 85°C 0.4 TA = 85°C 0.4 0.2 0.0 0.0001 TA = 150°C 0.2 TA = 150°C 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current DS31148 Rev. 3 - 2 2 of 4 www.diodes.com 2DD2150R © Diodes Incorporated 100 f = 1MHz 175 fT, GAIN-BANDWIDTH PRODUCT (MHz) 150 125 100 75 50 VCE = 2V f = 100MHz Cobo, OUTPUT CAPACITANCE (pF) 80 NEW PRODUCT 60 40 20 25 0 0 0 10 15 20 25 30 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Output Capacitance Characteristics 5 20 40 60 80 100 IC, EMITTER CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product vs. Emitter Current 0 Ordering Information (Note 5) Device 2DD2150R-13 Notes: 5. Packaging SOT89-3L Shipping 2500/Tape & Reel For packaging details, go to our website at http://www.diodes.com/ap02007.pdf. Marking Information (Top View) YWW N33R N33R = Product Type Marking Code = Manufacturer’s Marking Code YWW = Date Code Marking Y = Last digit of year ex: 7 = 2007 WW = Week code 01 - 52 Package Outline Dimensions D1 0 20 0. R C SOT89-3L Dim A B Min 1.40 0.45 0.37 0.35 4.40 1.50 2.40 — 3.95 0.90 Max 1.60 0.55 0.47 0.43 4.60 1.70 2.60 — 4.25 1.20 Typ 1.50 0.50 0.42 0.38 4.50 1.60 2.50 1.50 4.10 1.05 E H B1 C D D1 E e B B1 8° e (4X ) L A H L D All Dimensions in mm DS31148 Rev. 3 - 2 3 of 4 www.diodes.com 2DD2150R © Diodes Incorporated Suggested Pad Layout 1.7 N EW PRODUCT 2.7 0.4 1.9 1.3 0.9 3.0 Unit: mm IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS31148 Rev. 3 - 2 4 of 4 www.diodes.com 2DD2150R © Diodes Incorporated