FZT796A

FZT796A TYPICAL CHARACTERISTICS 1.8 SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * 200 Volt VCEO * Gain of 250 at IC=0.3 Amps * Very low saturation voltage APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE FZT696B PARTMARKING DETAIL FZT796A FZT796A C 1.6 - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 IC/IB=40 IC/IB=20 IC/IB=10 Tamb=25°C 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 -55°C +25°C +100°C +175°C IC/IB=20 E C B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE -200 -200 -5 -1 -0.5 2 -55 to +150 UNIT V V V A A W °C - (Volts) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage 0.01 0.1 1 10 V V 0.01 0.1 1 10 Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER IC - Collector Current (Amps) I+ - Collector Current (Amps) - Normalised Gain 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 +100°C +25°C -55°C VCE=10V 750 1.6 1.4 -55°C +25°C +100°C +175°C IC/IB=10 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) Breakdown Voltage Collector-Base Collector-Emitter Emitter-Base Collector Cut-Off Current V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) -200 -200 -5 - Typical Gain - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V V V -0.1 -0.1 -0.2 -0.3 -0.3 -0.95 -0.67 300 300 250 100 100 225 12 100 3200 800 µA µA 500 250 IC=-100µ A IC=-10mA* IE=-100µ A VCB=-150V VEB=-4V IC=-50mA, IB=-2mA* IC=-100mA, IB=-5mA* IC=-200mA, IB=-20mA* IC=-200mA,IB=-20mA* IC=-200mA,VCE=-10V* IC=-10mA, VCE=-10V* IC=-100mA, VCE=-10V* IC=-300mA, VCE=-10V* IC=-400mA, VCE=-10V* h 0.01 0.1 1 10 h V 0.01 0.1 1 10 Emitter Cut-Off Current Collector-Emitter Saturation Voltage I+ - Collector Current (Amps) I+ - Collector Current (Amps) V V V V V Base-EmitterSaturationVoltage VBE(sat) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 -55°C +25°C +100°C VCE=10V 1 Base-EmitterTurn-OnVoltage Static Forward Current Transfer Ratio DC 1s 100ms 10ms 1ms 100µs VBE(on) hFE I -Collector Current (A) - (Volts) 0.1 0.01 Transition Frequency Input Capacitance 1000 fT Cibo Cobo ton toff MHz pF pF ns ns V IC=-50mA, VCE=-5V f=50MHz VEB=-0.5V, f=1MHz VCB=-10V, f=1MHz IC=-100mA, IB1=-10mA IB2=-10mA, VCC=-50V + 0.001 1 10 100 VCE - Collector Emitter Voltage (V) Output Capacitance Switching Times I+ - Collector Current (Amps) Safe Operating Area *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 256 3 - 255 FZT796A TYPICAL CHARACTERISTICS 1.8 SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * 200 Volt VCEO * Gain of 250 at IC=0.3 Amps * Very low saturation voltage APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE FZT696B PARTMARKING DETAIL FZT796A FZT796A C 1.6 - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 IC/IB=40 IC/IB=20 IC/IB=10 Tamb=25°C 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 -55°C +25°C +100°C +175°C IC/IB=20 E C B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE -200 -200 -5 -1 -0.5 2 -55 to +150 UNIT V V V A A W °C - (Volts) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage 0.01 0.1 1 10 V V 0.01 0.1 1 10 Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER IC - Collector Current (Amps) I+ - Collector Current (Amps) - Normalised Gain 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 +100°C +25°C -55°C VCE=10V 750 1.6 1.4 -55°C +25°C +100°C +175°C IC/IB=10 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) Breakdown Voltage Collector-Base Collector-Emitter Emitter-Base Collector Cut-Off Current V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) -200 -200 -5 - Typical Gain - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V V V -0.1 -0.1 -0.2 -0.3 -0.3 -0.95 -0.67 300 300 250 100 100 225 12 100 3200 800 µA µA 500 250 IC=-100µ A IC=-10mA* IE=-100µ A VCB=-150V VEB=-4V IC=-50mA, IB=-2mA* IC=-100mA, IB=-5mA* IC=-200mA, IB=-20mA* IC=-200mA,IB=-20mA* IC=-200mA,VCE=-10V* IC=-10mA, VCE=-10V* IC=-100mA, VCE=-10V* IC=-300mA, VCE=-10V* IC=-400mA, VCE=-10V* h 0.01 0.1 1 10 h V 0.01 0.1 1 10 Emitter Cut-Off Current Collector-Emitter Saturation Voltage I+ - Collector Current (Amps) I+ - Collector Current (Amps) V V V V V Base-EmitterSaturationVoltage VBE(sat) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 -55°C +25°C +100°C VCE=10V 1 Base-EmitterTurn-OnVoltage Static Forward Current Transfer Ratio DC 1s 100ms 10ms 1ms 100µs VBE(on) hFE I -Collector Current (A) - (Volts) 0.1 0.01 Transition Frequency Input Capacitance 1000 fT Cibo Cobo ton toff MHz pF pF ns ns V IC=-50mA, VCE=-5V f=50MHz VEB=-0.5V, f=1MHz VCB=-10V, f=1MHz IC=-100mA, IB1=-10mA IB2=-10mA, VCC=-50V + 0.001 1 10 100 VCE - Collector Emitter Voltage (V) Output Capacitance Switching Times I+ - Collector Current (Amps) Safe Operating Area *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 256 3 - 255