20 10V 15 5.0V
15 Vds=5V 10
Id (A)
Id (A)
4.5V 10 4.0V 5 Vgs=3.5V 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics
125°C
5 25°C
0 2 2.5 3 3.5 4 4.5 5 Vgs (Volts) Figure 2: Transfer Characteristics 2
100
Normalized On-Resistance
90
1.8 1.6
Vgs=10V Id=4.5A
Rds(on) (m: )
80 70 60 50 40 30 20 0 5 10 15 20 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Vgs=10V Vgs=4.5V
Vgs=4.5V 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature Id=3.0A
140 Id=4.5A 120
1.0E+01 1.0E+00 1.0E-01 125°C 125°C
Rds(on) (m: )
Is (A)
100
1.0E-02 1.0E-03 25°C
80
60
25°C
1.0E-04 1.0E-05
40 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
Vsd (Volts) Figure 6: Body-Diode Characteristics
10 8 Vgs (Volts) 6 4 2 0 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 Vds=30V Id= 4.5A Capacitance (pF)
800
600 Ciss 400 Coss Crss 0 0 10 20 30 40 50 60 Vds (Volts) Figure 8: Capacitance Characteristics
200
100.0 Rds(on) limited 10.0 10ms 1s 1.0 Tj(max.)=150°C Ta=25°C 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s DC 0.1s 1ms 100Ps 10Ps Power (W)
40 Tj(max.)=150°C Ta=25°C 30
Id (Amps)
20
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZT ja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
20 -10V 15 -4.5V -4.0V
30 Vds=-5V 25 20
-Id (A)
10 -3.5V 5 Vgs=-3.0V 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics
-Id (A)
15 10 125°C 5 25°C 0 1 1.5 2 2.5 3 3.5 4 -Vgs (Volts) Figure 2: Transfer Characteristics 2
130
Normalized On-Resistance
120
Vgs=-4.5V
1.8 1.6 1.4 1.2 1 0.8
Id=-3.2A Vgs=-10V
Rds(on) (m: )
110 100 90 80 70 0 2 4 6 8 10 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 180 160 Id=-3.2 Vgs=-10V
Vgs=-4.5V Id=-2.8A
0
25
50
75
100
125
150
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01
Rds(on) (m: )
125°C
-Is (A)
140 120 100 80 60 2 3 4 5 6 7 8 9 10 25°C
125°C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics 25°C
-Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
10 Vds=-30V Id=-3.2A
1400 1200
8 -Vgs (Volts)
6
Capacitance (pF)
1000 800 600 400 Coss 200
Ciss
4
2
Crss
0 0 4 8 12 16 20
0 0 10 20 30 40 50 60 -Vds (Volts) Figure 8: Capacitance Characteristics
-Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 Tj(max.)=150°C, Ta=25°C Rds(on) limited 0.1s 1.0 1s 10s 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 0 0.001
40 Tj(max.)=150°C Ta=25°C Power (W) 1ms 10ms 100Ps 30
-Id (Amps)
10.0
20
10
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Pd 0.1 Ton Single Pulse 0.01 0.00001 T
0.0001
0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
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