IS357A

IS357A HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS DESCRIPTION The IS357A is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package. FEATURES l Current Transfer Ratio 80 - 160 % l Isolation Voltage (3.75kVRMS ,5.3kVPK ) l All electrical parameters 100% tested l Custom electrical selections available l Drop in replacement for Sharp PC357A APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 04/10/00 ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com DB92851-AAS/A1 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -40°C to + 125°C Operating Temperature -30°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION Total Power Dissipation (derate linearly 2.26mW/°C above 25°C) 35V 6V 150mW 170mW ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) Collector-emitter Breakdown (BVCEO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Coupled Current Transfer Ratio (CTR) MIN TYP MAX UNITS 1.2 5 10 35 6 100 80 160 1.4 V V µA V V nA % TEST CONDITION IF = 20mA IR = 10µA VR = 4V IC = 0.5mA IE = 0.1mA VCE = 20V 5mA IF , 5V VCE Output Collector-emitter Saturation VoltageVCE (SAT) Input to Output Isolation Voltage VISO 3750 5300 0.2 V 20mA IF , 1.0mA IC See note 1 See note 1 VIO = 500V (note 1) VCE = 2V , IC = 2mA, RL = 100Ω VRMS VPK 4 3 18 18 Ω µs µs Input-output Isolation Resistance RISO 5x1010 Output Rise Time tr Output Fall Time tf Note 1 Note 2 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. 04/10/00 DB92851-AAS/A1 CHARACTERISTIC CURVES Fig.1 Forword Current vs. Ambient Temperatute 60 50 Fig.2 Collector Power Dissiption vs. Ambient Temperature 200 Collector Power dissipation Pc (mW) 0 25 50 75 100 o Forward current I (mA) F 150 40 30 20 10 0 -30 100 50 125 0 -30 0 25 50 75 100 o 125 Ambient temperature Ta ( C) Ambient temperature Ta ( C) Fig.3 Collector-emitter Saturation Voltage vs. Forward Current 1mA 3mA 5mA 7mA 6 Fig.4 Forward Current vs. Forward Voltage O Ic=0.5mA Collecotr-emitter saturation voltage VCE (sat) (V) Ta= 25 C 500 200 Ta= 75 C 50 C o o 5 4 3 2 1 Forward current I (mA) F 100 50 20 10 5 2 25 C 0C -25 C o o o 0 0 5 10 15 Forward current I F (mA) 1 0 0.5 1.0 1.5 2.0 2.5 3.0 Forward voltage V F (V) Fig.5 Current Transfer Ratio vs. Forward Current 200 180 VCE = 5V Ta= 25 C o Fig.6 Collector Current vs. Collector-emitter Voltage 50 IF = 30mA 25mA Ta= 25 C o Current transfer ratio CTR (%) 140 120 100 80 60 40 20 0 1 2 5 10 20 50 Forward current I F (mA) Collector current Ic (mA) 160 40 20mA 30 15mA 20 10mA 10 5mA 0 0 1 2 3 4 5 6 7 8 9 Collector-em itter voltage V CE (V) Pc(MAX.) 30/03/01 Appendix to Mini Flat Pack CHARACTERISTIC CURVES Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature 150 I F = 5mA Fig.8 Collector-emitter Saturation Voltage vs. Ambient Temperature 0.10 I F = 20mA Collector-emitter saturation voltage VCE (sat) (V) Relative current transfer ratio (%) VCE = 5V 100 Ic= 1mA 0.08 0.06 0.04 50 0.02 0 20 40 60 80 o 0 100 20 40 60 80 o 100 Ambient temperature Ta ( C) Ambient temperature Ta ( C) Fig.9 Collector Dark Current vs. Ambient Temperature 10000 VCE = 20V Fig.10 Response Time vs. Load Resistance 500 200 VCE = 2V Ic= 2mA Ta= 25 C o (nA) CEO Response time ( s) 1000 100 50 20 10 5 2 1 0.5 tr tf td ts Collector dark current I 100 10 1 20 40 60 80 o 100 0.2 0.05 0.1 0.2 0.5 1 2 5 10 Ambient temperature Ta ( C) Load resistance R L (k ) Fig.11 Frequency Response Test Circuit for Response Time Vcc VCE = 2V Ic= 2mA Ta= 25 C o Input Output Output 10% 90% td ts tr tf Input RD RL 0 Voltage gain Av (dB) 10 R L= 10k 1k 100 Test Circuit for Frequency Response Vcc 20 RD 0.5 1 2 5 10 20 50 100 500 RL Output Frequency f (kHz) 30/03/01 Appendix to Mini Flat Pack TEMPERATURE PROFILE OF SOLDERING REFLOW (1) One time soldering reflow is recommended within the condition of temperature and time profile shown below. (2) When using another soldering method such as infrated ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of above (1). 30/03/01 Appendix to Mini Flat Pack TAPING DIMENSIONS Description Tape wide Pitch of sprocket holes Distance of compartment Distance of compartment to compartment Symbol W P0 F P2 P1 Dimensions in mm ( inches ) 12 ± 0.3 ( .47 ) 4 ± 0.1 ( .15 ) 5.5 ± 0.1 ( .217 ) 2 ± 0.1 ( .079 ) 8 ± 0.1 ( .315 ) 30/03/01 Appendix to Mini Flat Pack