PJ13007CZ

PJ13007 NPN Epitaxial Silicon Transistor HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • S uitable for Swiching Regulator and Motor Control TO-220 ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ℃ ) Characteristic C ollector Base Voltage C ollector Emitter Voltage Emitter Base Voltage C ollector Current (DC) C ollector Current (Pulse) B ase Current C ollector Dissipation Junction Temperature S torage Temperature IB Pc Tj Tstg 4 80 150 -65 ~150 A W ℃ ℃ Device P J13007CZ Operating Temperature -20℃～+85℃ Package T O-220 VEBO Ic Ic 9 8 16 V A A Symbol VCBO VCEO Rating 700 400 Uint V V P in : 1. Base 2. Collector 3. Emitter ORDERING INFORMATION ELECTRICAL CHARACTERISTICS(Ta= 25 ℃ ) Characteristic *Collector Emitter Sustaining Voltage Emitter Cutoff Current *DC Current Gain *Collector Emitter Saturation Voltage Symbol VCEO(SUS) IEBO hFE VCE (sat) Test Condition Ic = 10mA, IB = 0 VEB = 9V, Ic=0 VCE = 5V, Ic =2A VCE = 5V, Ic =5A Ic =2A, IB = 0.4A Ic =5A, IB = 1A Ic =8A, IB = 2A *Base Emitter Saturation Voltage Output Capacitance C urrent Gain Bandwidth Product T urn On Time S torage Time F all Time P ulse Test: PW ≤300 μS, Duty Cycle ≤2 % VBE (sat) C OB fT t on ts tf Ic =2A, IB = 0.4A Ic =5A, IB = 1A VCB = 10V, f =0.1MHz VCE = 10V, Ic =0.5A VCC = 125V, Ic =5A IB1 = IB2 = 1A 4 1.6 3 0.7 110 8 5 Min 400 1 60 30 1 2 3 1.2 1.6 V V V V V pF MHz μS μS μS Typ Max Unit V mA 1-2 2002/01.rev.A PJ13007 NPN Epitaxial Silicon Transistor 2-2 2002/01.rev.A