BSS129

ND2406L/2410L, BSS129 N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number ND2406L ND2410L BSS129 230 V(BR)DSV Min (V) 240 rDS(on) Max (W) 6 10 20 VGS(off) (V) –1.5 to –4.5 –0.5 to –2.5 –0.7 (min) ID (A) 0.23 0.18 0.15 Features D D D D D High Breakdown Voltage: 260 V Normally “On” Low rDS Switch: 3.5 W Low Input and Output Leakage Low-Power Drive Requirement Low Input Capacitance TO-226AA (TO-92) 1 Benefits D D D D D Full-Voltage Operation Low Offset Voltage Low Error Voltage Easily Driven Without Buffer High-Speed Switching Applications D D D D D Normally “On” Switching Circuits Current Sources/Limiters Power Supply, Converter Circuits Solid-State Relays Telecom Switches TO-92-18CD (TO-18 Lead Form) 1 S S G 2 D 2 D 3 Top View ND2406L ND2410L G 3 Top View BSS129 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Drain Current (T 150 Pulsed Drain Currenta TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg ND2406L 240 "30 0.23 0.14 0.9 0.8 0.32 156 ND2410L 240 "30 0.18 0.12 0.9 0.8 0.32 156 –55 to 150 BSS129 230 "20 0.15 Unit V A 0.6 1.0 0.4 125 W _C/W _C Power Dissipation Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70198. Applications information may also be obtained via FaxBack, request document #70612. Siliconix S-52426—Rev. C, 14-Apr-97 1 ND2406L/2410L, BSS129 Specificationsa Limits ND2406L ND2410L BSS129 Parameter Static Symbol Test Conditions Typb Min Max Min Max Min Max Unit VGS = –9 V, ID = 10 mA Drain-Source DiS Breakdown Voltage V(BR)DSV VGS = –5 V, ID = 10 mA VGS = –3 V, ID = 250 mA VDS = 5 V, ID = 10 mA Gate-Source Cutoff Voltage Cutoff Voltage VGS( ff) GS(off) VDS = 3 V, ID = 1 mA VDS = 0 V, VGS = "20 V TJ = 125_C VDS = 180 V, VGS = –9 V TJ = 125_C Drain Cutoff Current Cutoff Current ID( ff) D(off) VDS = 180 V, VGS = –5 V TJ = 125_C VDS = 230 V, VGS = –3 V TJ = 125_C Drain-Saturation Currentc IDSS VDS = 10 V, VGS = 0 V VGS = 2 V, ID = 30 mA Drain-Source On-Resistancec On rDS( ) DS(on) VGS = 0 V, ID = 30 mA TJ = 125_C VGS = 0 V, ID = 14 mA Forward Transconductance c Transconductance Common Source Output Conductancec gf fs gos VDS = 25 V, ID = 250 mA VDS = 10 V, ID = 30 A 260 260 260 240 240 230 –1.5 –4.5 –0.5 –2.5 –0.7 "10 "50 1 200 1 200 0.1 200 mA "10 "50 "100 nA V Gate-Body Leakage Leakage IGSS 350 3.3 4.5 7.2 4 375 110 70 40 40 mA 6 15 10 25 20 140 W mS mS Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = –5 V 25 V f = 1 MHz 70 20 10 120 30 15 120 30 15 pF Switchingd Turn-On Time Time td(on) tr td(off) tf Notes a. TA = 25_C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v300 ms duty cycle v2%. d. Switching time is essentially independent of operating temperature. VDD = 25 V, RL = 830 W ID ^ 30 mA, VGEN = -5 V -5 RG = 25 W 15 75 ns 40 100 Turn-Off Time Time VDDV24 2 Siliconix S-52426—Rev. C, 14-Apr-97 ND2406L/2410L, BSS129 Typical Characteristics (25_C Unless Otherwise Noted) 200 Output Characteristics (ND2406) 200 VGS = 2 V –0.8 V –1 V I D – Drain Current (mA) 160 Output Characteristics (ND2410) VGS = 2 V 0.2 V 0V 0.4 V 120 –0.4 V 80 –0.6 V 40 –0.8 V –1 V 0 0.4 0.8 1.2 1.6 2.0 –0.2 V I D – Drain Current (mA) 160 –0.4 V –0.6 V 120 –1.2 V 80 –1.4 V –1.6 V 40 –1.8 V –2 V 0 0 0.4 0.8 1.2 1.6 2 VDS – Drain-to-Source Voltage (V) 500 0 VDS – Drain-to-Source Voltage (V) Transfer Characteristics (ND2406) 500 VDS = 10 V TC = –55_C 125_C I D – Drain Current (mA) 25_C 400 Transfer Characteristics (ND2410) VDS = 10 V 400 I D – Drain Current (mA) 300 300 200 200 25_C TC = 125_C –55_C 100 100 0 –4.5 –3.5 –2.5 –1.5 –0.5 0.5 0 –4.5 –3.5 –2.5 –1.5 –0.5 0.5 VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V) 10 On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage rDS(on) IDSS 1000 25 On-Resistance vs. DrainCurrent VGS = 0 V 6 600 rDS(on) – On-Resistance (W ) rDS(on) – On-Resistance (W ) 8 800 20 I DSS – Drain Current (mA) 15 ND2410 10 4 400 ND2406 2 rDS @ ID = 30 mA, VGS = 0 V IDSS @ VDS = 7.5 V, VGS = 0 V 0 –1 –2 –3 –4 –5 –6 VGS(off) – Gate-Source Cutoff Voltage (V) 200 5 0 0 10 100 ID – Drain Current (mA) 1K Siliconix S-52426—Rev. C, 14-Apr-97 3 ND2406L/2410L, BSS129 Typical Characteristics (25_C Unless Otherwise Noted) (Cont’d) 2.25 rDS(on) – Drain-Source On-Resistance (Normalized) 2.00 1.75 1.50 1.25 1.00 0.75 0.50 –50 –10 30 70 110 150 TJ – Junction Temperature (_C) Normalized On-Resistance vs. Junction Temperature g fs – Forward Transconductance (mS) VGS = 0 V I D = 30 mA 350 300 250 200 150 100 50 0 Forward Transconductance vs. Drain Current 25_C 150_C –55_C VDS = 10 V Pulse Test 80 ms, 1% Duty Cycle 1 10 100 1K ID – Drain Current (mA) Capacitance 240 200 C – Capacitance (pF) 160 120 80 40 C rss 0 0 10 20 30 40 50 VDS – Drain-to-Source Voltage (V) 3 1 C oss C iss VGS = –5 V f = 1 MHz t – Switching Time (ns) 100 300 Load Condition Effects on Switching tf t d(off) tr VDD = 25 V VGS = 0 to –5 V RG = 25W td(on) 10 10 ID – Drain Current (mA) 100 1 Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 0.01 Single Pulse 2. Per Unit Base = RthJA = 156_C/W 3. TJM – TA = PDMZthJA(t) 0.01 0.1 1 10 100 1K 10 K t1 – Square Wave Pulse Duration (sec) 4 Siliconix S-52426—Rev. C, 14-Apr-97