EM512D16

NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM512D16 Advance Information EM512D16 512Kx16 bit Ultra-Low Power Asynchronous Static RAM Overview The EM512D16 is an integrated memory device containing a low power 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The base design is the same as NanoAmp’s standard low voltage version, EM512W16. The device is fabricated using NanoAmp’s advanced CMOS process and high-speed/ultra low-power/ low-voltage circuit technology. The device pinout is compatible with other standard 512K x 16 SRAMs. The device is designed such that a creative user can improve system power and performance parameters through use of it’s unique page mode operation. Features • Dual Voltage for Optimum Performance: Vccq - 2.3 to 3.6 Volts Vcc - 1.7 to 2.2 Volts Extended Temperature Range: -40 to +85 oC Fast Cycle Time: Random Access < 70 ns Page Mode < 2 5 ns Very Low Operating Current: ICC < 5 mA typical at 2V, 10 Mhz Very Low Standby Current: ISB < 2 uA @ 55 o C 16 Word Fast Page-Mode Operation 48-Pin BGA or Known Good Die available • • • • • • FIGURE 1: Pin Configuration 1 A B C D E F G H LB I/O 8 I/O 9 VS S 2 OE UB I /O 10 I/O 11 3 A0 A3 A5 A 17 NC A 14 A 12 A9 4 A1 A4 A6 A7 A 16 A 15 A 13 A 10 5 A2 CE1 I/O 1 I/O 3 I/O 4 I/O 5 WE A 11 6 CE2 I/O 0 I/O 2 VCC VS S I/O 6 I/O 7 NC TABLE 1: Pin Descriptions P in Name A 0 -A 18 WE CE1, CE2 OE UB LB I/O0 -I/O 15 V CC V CCQ V SS NC Pin Function Address Inputs Write Enable Input Chip Enable Inputs Output Enable Input Upper Byte Enable Input Lower Byte Enable Input Data Inputs/Outputs Power Power I/O pins only Ground Not Connected VCCQ I/O 12 I/O 14 I/O 15 A 18 I/O 13 NC A8 48 Pin BGA (top) FIGURE 1: Typical Operating Envelope (Serial R/W Mix) 12.5 10.0 ( mA ) T ypica l ICC 7.5 2.0 Volts 5.0 2.5 0.0 0 2.5 5.0 7.5 10.0 12.5 15.0 Operating Frequency (Mhz) Stock No. 23144-B 3/01 Advance - Subject to Change Without Notice 1 EM512D16 NanoAmp Solutions, Inc. FIGURE 3: Functional Block Diagram Advance Information Address Inputs A0 - A 3 Word Address Decode Logic W o r d M u x Input/ Output Mux and Buffers Address Inputs A4 - A18 Page Address Decode Logic 32K Page x 16 Word x 16 bit RAM Array I/O 0 - I/O7 I/O 8 - I/O15 C E1 C E2 WE OE UB LB Control Logic TABLE 2: Functional Description CE1 H X X L L L CE2 X L X H H H WE X X X L H H OE X X X X3 L H UB X X H L1 L L 1 1 LB X X H L1 L L 1 1 I/O 0 - I/O 15 1 High Z High Z High Z Data In Data Out High Z MODE Standby2 Standby2 Standby2 Write 3 Read Active POWER Standby Standby Standby Active Active Active 1. When UB a nd LB a re in select mode (low), I/O 0 - I/O 15 a re affected as shown. When LB o nly is in the select mode only I/O 0 - I O7 are affected as shown. When UB i s in the select mode only I/O 8 - I/O 15 a re affected as shown. If both UB a nd LB a re in the deselect mode (high), the chip is in a standby mode. 2. When the device is in standby mode, control inputs (WE , O E, UB, and LB ), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. TABLE 3: Capacitance* Item Input Capacitance I/O Capacitance Symbol CIN CI/O Test Condition VIN = 0V, f = 1 MHz, TA = 25oC VIN = 0V, f = 1 MHz, TA = 25oC Min Max 8 8 Unit pF pF Note: These parameters are verified in device characterization and are not 100% tested Stock No. 23144-B 3/01 Advance - Subject to Change Without Notice 2 EM512D16 NanoAmp Solutions, Inc. TABLE 4: Absolute Maximum Ratings* Item Voltage on any pin relative to VSS Voltage on VCC Supply Relative to VSS Storage Temperature Operating Temperature * Advance Information Symbol VIN,OUT VCC T STG TA Rating –0.3 to VCC +0.3 –0.3 to 3.0 –40 to 125 –-40 to +85 Unit V V o o C C Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. TABLE 5: Operating Characteristics (Over specified Temperature Range) Item Supply Voltage Supply Voltage I/O Only Minimum Data Retention Voltage Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Input Leakage Current Output Leakage Current Read/Write Operating Supply Current @ 1 uS Cycle Time Random Access Operating Supply Current @ 70 nS Cycle Time Page Mode Operating Supply Current @ 25 nS Cycle Time Read/Write Quiescent Operating Supply Current (Note 2) Symbol VCC VCCQ VDR VIH VIL VOH VO L I LI ILO ICC1 ICC2 ICC2 IOH = 0.2mA IOL = -0.2mA VIN = 0 to VCC OE = V IH or Chip Disabled VCC=2.2 V, V IN=VIH or VIL Chip Enabled, IOL = 0 VCC=2.2 V, V IN=VIH or VIL Chip Enabled, IOL = 0 VCC=2.2 V, V IN=VIH or VIL Chip Enabled, IOL = 0 VIN = V CC or 0V Chip Enabled, IOL = 0 f = 0, t A= 85oC, VCC = 3.6 V VIN = V CC or 0V Chip Disabled tA = 55oC, VCC = 2.2 V VIN = V CC or 0V Chip Disabled tA = 85oC, VCC = 2.2 V Vcc = 1.2V, VIN = VCC or 0 Chip Disabled, tA = 85o C Chip Disabled (Note 2) Test Conditions Min 1.7 2.3 1.2 0.7VCC –0.5 VCC –0.2 0.2 0.5 0.5 2.0 15.0 7.0 VCC +0.5 0.3VCC Typ Max 2.2 3.6 Unit V V V V V V V uA uA mA mA mA ICC3 2.0 mA Operating Standby Current (Note 2) Maximum Standby Current (Note 2) Maximum Data Retention Current (Note 2) I SB1 2 uA I SB2 20 uA I DR 5 uA 1. This device assumes a standby mode if the chip is disabled (CE1 h igh or CE2 low). It will also go into a standby mode whenever if both UB a nd LB a re high. In order to achieve low standby current all inputs must be within 0.2 volts of either VCC or VSS. 2. The Chip is Disabled when CE1 i s high or CE2 is low. The Chip is Enabled when CE1 i s low and CE2 is high. Stock No. 23144-B 3/01 Advance - Subject to Change Without Notice 3 EM512D16 NanoAmp Solutions, Inc. TABLE 6: Timing Test Conditions Item Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Operating Temperature 0.1V CC to 0.9 VCC 5ns 0.5 VCC -40 to +85 o C Advance Information TABLE 7: Timing Item Read Cycle Time Address Access Time (Random Access) Address Access Time (Word Mode) Chip Enable to Valid Output Output Enable to Valid Output Byte Select to Valid Output Chip Enable to Low-Z output Output Enable to Low-Z Output Byte Select to Low-Z Output Chip Disable to High-Z Output Output Disable to High-Z Output Byte Select Disable to High-Z Output Output Hold from Address Change Write Cycle Time Chip Enable to End of Write Address Valid to End of Write Byte Select to End of Write Write Pulse Width Address Setup Time Write Recovery Time Write to High-Z Output Data to Write Time Overlap Data Hold from Write Time End Write to Low-Z Output Symbol tRC tAA tAAW tCO tO E t LB, tUB t LZ tOLZ tLBZ , tUBZ tHZ tOHZ tLBHZ, tUBHZ tOH tWC tCW t AW t LBW, tUBW t WP tAS tWR tWHZ tDW tDH tOW 40 0 5 10 5 10 0 0 0 10 85 50 40 50 40 0 0 20 40 0 5 20 20 20 VCCQ = 2.3 - 3.6 V Min. 85 85 85 85 30 85 10 5 10 0 0 0 10 70 50 40 50 40 0 0 20 20 20 20 Max. VCCQ = 2.7 - 3.6 V Min. 70 70 70 70 25 70 Max. ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Units Stock No. 23144-B 3/01 Advance - Subject to Change Without Notice 4 EM512D16 NanoAmp Solutions, Inc. FIGURE 4: Timing of Read Cycle (1) (CE = OE = VIL , WE = VIH ) tRC, tRCW Address tAA, tAAW tOH Advance Information Data Out Previous Data Valid Data Valid FIGURE 5: Timing Waveform of Read Cycle (2) (WE = VIH ) tRC, tRCW Address tAA, tAAW tHZ(1,2) CE1 tCO CE2 tLZ(2) tOE OE# tOLZ tLB, tUB LB , UB tLBLZ, tUBLZ High-Z Data Out tLBHZ, tUBHZ Data Valid tOHZ(1) Stock No. 23144-B 3/01 Advance - Subject to Change Without Notice 5 EM512D16 NanoAmp Solutions, Inc. FIGURE 6: Timing Waveform of Page Mode Read Cycle (WE = VIH) tRC Page Address (A4 - A17) tAAW tAA tRCW Advance Information Word Address (A0 - A3) tHZ CE1 tCO CE2 tOHZ tO E OE tOLZ tLB, tUB tLBLZ, tUBLZ High-Z Data Out LB , UB tLBHZ, tUBHZ Stock No. 23144-B 3/01 Advance - Subject to Change Without Notice 6 EM512D16 NanoAmp Solutions, Inc. FIGURE 7: Timing Waveform of Write Cycle (1) (WE control) tWC Address tA W CE1 tCW CE2 tLBW, tUBW LB, UB tAS WE tDW High-Z Data In tWHZ High-Z Data Out tDH tWP tWR Advance Information Data Valid tOW FIGURE 8: Timing Waveform of Write Cycle (2) (CE1 Control) tWC Address tAW CE1 (for CE2 Control, use inverted signal) LB , UB tW P WE tDW Data In tLZ Data Out tWHZ tDH tCW tAS tLBW , tUBW tWR Data Valid High-Z Stock No. 23144-B 3/01 Advance - Subject to Change Without Notice 7 EM512D16 NanoAmp Solutions, Inc. FIGURE 9: BALL GRID ARRAY PACKAGING A1 BALL PAD CORNER (3) Advance Information D 0.20±0.04 1.40±0.10 1. .30 DIA. TYP E 2. SEATING PLANE - Z 0.15 0.70±0.05 Z Z 0.05 TOP VIEW SIDE VIEW 1. DIMENSION IS MEASURED AT THE MAXIMUM SOLDER BALL DIAMETER. PARALLEL TO PRIMARY Z. 2. PRIMARY DATUM Z AND SEATING PLANE ARE DEFINED BY THE SPHERICAL CROWNS OF THE SOLDER BALLS. 3. A1 BALL PAD CORNER I.D. TO BE MARKED BY INK. SD A1 BALL PAD CORNER e SE K TYP J TYP e BOTTOM VIEW TABLE 8: Dimensions (mm) e = 0.75 D E SD 8.0 10.0 0.375 SE 0.375 J 2.125 K 2.375 BALL MATRIX TYPE FULL Stock No. 23144-B 3/01 Advance - Subject to Change Without Notice 8 EM512D16 NanoAmp Solutions, Inc. TABLE 9: Revision History Revision A B Date Jan. 1, 2001 Mar 2001 Initial Advance Release Deleted TSOP references NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp product may be expected to result in significant injury or death, including life support systems and critical medical instruments. Advance Information Change Description © 2001 Nanoamp Solutions, Inc. All rights reserved. NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this datasheet and the products described therein, without prior notice. NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this datasheet are provided for illustration purposes only and they vary depending upon specific applications. Stock No. 23144-B 3/01 Advance - Subject to Change Without Notice 9