NIKO-SEM
N- & P-Channel Enhancement Mode Field Effect Transistor(Preliminary)
P4532VG
SOP-8 Lead-Free
PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 30 -30 RDS(ON) 60mΩ 45mΩ ID 4A -5A G : GATE D : DRAIN S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range
1
SYMBOL VDS VGS
N-Channel P-Channel 30 ±20 4 3 12 2 1.3 -55 to 150 -30 ±20 -5 -4 -20
UNITS V V
TC = 25 °C TC = 70 °C TC = 25 °C TC = 70 °C
ID IDM PD Tj, Tstg
A
W °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient
1 2
SYMBOL RθJA
TYPICAL
MAXIMUM 62.5
UNITS °C / W
Pulse width limited by maximum junction temperature. Duty cycle ≤ 1%
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA VDS = VGS, ID = -250µA N-Ch P-Ch N-Ch P-Ch 30 -30 1 -1 1.5 -1.5 2.5 -2.5 V MIN TYP MAX UNIT
1
JUL-26-2004
NIKO-SEM
N- & P-Channel Enhancement Mode Field Effect Transistor(Preliminary)
P4532VG
SOP-8 Lead-Free
VDS = 0V, VGS = ±20V Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V Zero Gate Voltage Drain Current IDSS
N-Ch P-Ch N-Ch P-Ch
±100 ±100 1 -1 10 -10 12 -20 72 58 48 34 19 11 95 80
nA
VDS = 20V, VGS = 0V, TJ = 55 °C N-Ch VDS = -20V, VGS = 0V, TJ = 55 °C P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch
µA
On-State Drain Current1
ID(ON)
VDS = 5V, VGS = 10V VDS =-5V, VGS = -10V VGS = 4.5V, ID = 3A
A
Drain-Source Resistance1
On-State
VGS = -4.5V, ID = -4A RDS(ON) VGS = 10V, ID = 4A VGS = -10V, ID = -5A
mΩ 60 45
Forward Transconductance1
gfs
VDS = 5V, ID = 3A VDS = -5V, ID = -5A
S
DYNAMIC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge2 Gate-Source Charge2 Gate-Drain Charge2
Ciss Coss Crss Qg Qgs Qgd
N-Ch N-Channel VGS = 0V, VDS = 10V, f = 1MHz P-Channel P-Ch N-Ch P-Ch P-Ch N-Channel VDS = 0.5V(BR)DSS, VGS = 10V, ID = 3A P-Channel VDS = 0.5V(BR)DSS, VGS = -10V, ID = -5A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch
790 690 175 310 65 75 5 14 0.8 2.2 1.0 1.9 nC pF
VGS = 0V, VDS = -10V, f = 1MHz N-Ch
2
JUL-26-2004
NIKO-SEM
N- & P-Channel Enhancement Mode Field Effect Transistor(Preliminary)
P4532VG
SOP-8 Lead-Free
Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2
td(on) tr td(off) tf
N-Channel VDD = 10V ID ≅ 1A, VGS = 10V, RGEN = 6Ω P-Channel VDD = -10V
N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch
7 6.7 12 9.7 12 19.8 7 12.3
11 13.4 18 19.4 18 35.6 11 22.2 nS
ID ≅ -1A, VGS = -10V, RGEN = 6Ω P-Ch
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS N-Ch P-Ch N-Ch P-Ch IF = 1A, VGS = 0V VSD IF = -1A, VGS = 0V
1 2
1.2 -1.3 2.6 -2.6 1 -1 V A
Pulsed Current
3
ISM
Forward Voltage1
N-Ch P-Ch
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH “P4532VG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXG parts name.
3
JUL-26-2004
NIKO-SEM
N- & P-Channel Enhancement Mode Field Effect Transistor(Preliminary)
P4532VG
SOP-8 Lead-Free
N-CHANNEL
4
JUL-26-2004
NIKO-SEM
N- & P-Channel Enhancement Mode Field Effect Transistor(Preliminary)
P4532VG
SOP-8 Lead-Free
5
JUL-26-2004
NIKO-SEM
N- & P-Channel Enhancement Mode Field Effect Transistor(Preliminary)
P4532VG
SOP-8 Lead-Free
P-CHANNEL
100 -Is - Reverse Drain Current(A) V GS = 0V 10 1 T A = 125° C 25° C -55° C
0.1
0.01 0.001 0
0.2 0.6 0.8 1.0 1.2 0.4 -VSD - Body Diode Forward Voltage(V)
1.4
6
JUL-26-2004
NIKO-SEM
N- & P-Channel Enhancement Mode Field Effect Transistor(Preliminary)
P4532VG
SOP-8 Lead-Free
7
JUL-26-2004
NIKO-SEM
N- & P-Channel Enhancement Mode Field Effect Transistor(Preliminary)
P4532VG
SOP-8 Lead-Free
SOIC-8(D) MECHANICAL DATA
mm Min. 4.8 3.8 5.8 0.38 Typ. 4.9 3.9 6.0 0.445 1.27 1.35 0.1 1.55 0.175 1.75 0.25 Max. 5.0 4.0 6.2 0.51 mm Min. 0.5 0.18 Typ. 0.715 0.254 0.22 0° 4° 8° Max. 0.83 0.25
Dimension A B C D E F G
Dimension H I J K L M N
J
F D E G I H K
B
C
A
8
JUL-26-2004
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