2N3442

2N3442 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. • Low Collector-Emitter Saturation Voltage – VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc – 2N4347 • Collector-Emitter Sustaining VoltageVCEO(sus) = 120 Vdc (Min) – 2N4347 140 Vdc (Min) – 2N3442 • Excellent Second-Breakdown Capability ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCB VEB Ratings #Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 Value 120 140 140 160 7.0 5.0 10 10 15 (**) 3.0 7.0 8.0 100 117 0.57 0.67 -65 to +200 Unit V Vdc Vdc IC Collector Current Peak Continuous Adc IB Base Current Peak Total Device Dissipation @ TC = 25° Derate above 25° Junction Temperature Storage Temperature Adc PD Watts W/°C °C °C TJ TS (**) This data guaranteed in addition to JEDEC registered data. COMSET SEMICONDUCTORS 1/3 2N3442 2N4347 THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case 2N4347 2N3442 Value 1.75 1.5 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) Ratings Collector-Emitter Sustaining Voltage (1) Test Condition(s) IC=200 mAdc, IB=0 Min Typ Mx Unit 2N4347 120 2N3442 140 Vdc V 200 mAdc 200 2N4347 10 mAdc 2N3442 2N4347 2N3442 2N4347 15 10 2N3442 20 4.0 2N4347 2N3442 30 5.0 60 70 1.0 2.0 1.0 5.0 mAdc 5.0 2.0 2N4347 130 2N3442 150 2N4347 2N3442 - VCER(SUS) RBE=100Ω Collector-Emitter Sustaining Voltage IC=0.1 Adc IC=0.2 Adc VCE=100 Vdc, IB=0 VCE=140 Vdc, IB=0 VCE=125 Vdc, VEB(off)=1.5 Vdc ICEO Collector-Emitter Current ICEX Collector Cutoff Current VCE=120 Vdc, VEB(off)=1.5 Vdc, TC = 150°C VCE=140 Vdc, VEB(off)=1.5 Vdc VCE=140 Vdc, VEB(off)=1.5 Vdc, TC = 150°C IEBO Emitter Cutoff Current VBE=7.0 Vdc, IC=0 IC=2.0 Adc, VCE=4.0 Vdc hFE IC=5.0 Adc, VCE=4.0 Vdc DC Current Gain IC=3.0 Adc, VCE=4.0 Vdc IC=10 Adc, VCE=4.0 Vdc IC=2.0 Adc, IB=200 mAdc VCE(SAT) Collector-Emitter saturation Voltage IC=5.0 Adc, IB=0.63 Adc IC=3.0 Adc, IB=0.3 Adc IC=10 Adc, IB=0.2 Adc Vdc COMSET SEMICONDUCTORS 2/3 2N3442 2N4347 Symbol VBE(on) Ratings Base-Emitter Voltage Test Condition(s) IC=2.0 Adc, VCE=4.0 Vdc IC=5.0 Adc, VCE=4.0 Vdc IC=3.0 Adc, VCE=4.0 Vdc IC=10 Adc, VCE=4.0 Vdc VCE=4.0 Vdc, IC=0.5 Adc, f=1.0 kHz VCE=4.0 Vdc, IC=2.0 Adc, f=1.0 kHz VCE=4.0 Vdc, IC=0.5 Adc, ftest = 50 kHz VCE=4.0 Vdc, IC=2.0 Adc, ftest = 40 kHz VCE=67 Vdc, IC=1.5 Adc VCE=78 Vdc, IC=1.5 Adc Min Typ Mx Unit 2N4347 2N3442 2N4347 2N3442 40 12 2.0 3.0 1.7 5.7 72 kHz 2N3442 2N4347 2N3442 80 1.0 1.0 s 2N4347 200 Vdc hfe Small Signal Current Gain fT Current Gain – Bandwith Product (2) Second Breakdown Collector Current Is/b (1) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (2) fT = |hfe| * ftest MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3