2N6800

2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES • Low RDS(on) • Ease of Paralleling • Qualified to MIL-PRF-19500/557 DESCRIPTION This hermetically packaged QPL product features the latest advanced MOSFET technology. I i i e l y s i e f r t s dal utd o Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. PRIMARY ELECTRICAL CHARACTERISTICS @ TC = 25° C PART NUMBER 2N6796 2N6798 2N6800 2N6802 V DS, Vo t ls 100 200 400 500 R DS(on) .8 1 .0 4 1.00 1.50 I, A m p s D 80 . 55 . 30 . 25 . S C H E M ATIC MECHANICAL OUTLINE Pin Connection Pin 1: Source Pin 2: Gate Pin 3: Drain (Case) 7 03 R0 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802 ABSOLUTE MAXIMUM RATINGS ( C = 25°C unless otherwise noted T Parameter I @ VGS = 10V, TC = 25°C D Continuous Drain Current JANTXV, JANTX, 2N6796 80 . 50 . 32 25 02 . ± 20 2 Units A A A W W/°C V mJ °C °C I @ VGS = 10V, TC = 100°C Continuous Drain Current D IM D P D @ TC = 25°C Pulsed Drain Current 1 Maximum Power Dissipation Linear Derating Factor VG S EA S TJ TS T G Gate-Source Voltage Single Pulse Avalanche Energy Operating Junction Storage Temperature Range Lead Temperature 43 . 4 -55 to 150 300(.06 from case for 10 sec) ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-Source Breakdown Voltage R DS(on) S a i D a n t - o r e ttc ri-oSuc On-State Resistance VGS(th) Gate Threshold Voltage I Zero Gate Voltage Drain DSS Current IS S Gate -to-Source Leakage Forward G IS S Gate -to-Source Leakage Reverse G Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gt-oDan(Mle” Cag aet-ri “ilr) hre t Turn-On Delay Time D(on) t Rise Time r t(off) Turn-Off Delay Time D t Fl Tm al ie r Min. 100 20 . - Typ. Max. Units V Test Conditions VG S = 0 , ID =1.0 mA, V VG S = 1 V ID = 5 0 A 3 0, . VG S = 1 V ID = 8 0 A 3 0, . VDS = VG S, D = 250 µA I VD S = 8 V VG S = 0V 0, VD S = 8 V VG S = 0 , TJ = 125°C 0, V VG S = 20 V VG S = - 0 V 2 VG S = 1 V ID = 8A 0, VD S = 50 V See note 4 VD D = 3 V ID = 5 0 A RG =7.5 0, ., See note 4 - .8 1 .195 40 . 25 250 100 -100 28.5 63 . 16.6 30 75 40 45 V µA nA nA nC nC nC ns ns ns ns Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage VS D t Reverse Recovery Time t r r 3 Typ. - Max. 15 . 300 Units V ns Test Conditions TJ = 2 ° , IS = 8.0A 3,VG S = 0 V 3 5C TJ = 2 ° , IF= 8 0 A id < 100 A/µs 5C . ,d/t Thermal Resistance Parameter Junction-to-Case R thJC R thCS Case-to-sink R thJA Junction-to-Ambient Min. - Typ. 0.21 - Max. 50 . 175 Units Test Conditions °C/W Mutn sraefa, onig ufc lt smooth, and greased Typical socket mount 1 . 2. 3 . 4. Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue eeiie aig us it iie y aiu ucin eprtr. 5 , trig C 0 . @VD D= 2 V S a t n TJ = 25° , L = 1 0 µH + 10%, RG = 25 , Peak IL = 8 0 A P l e w d h < 300 µs; Duty Cycle < 2 % us it See MIL-S-19500/557 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802 ABSOLUTE MAXIMUM RATINGS ( C = 25°C unless otherwise noted T Parameter I @ VGS = 10V, TC = 25°C D Continuous Drain Current JANTXV, JANTX, 2N6798 55 . 35 . 22 25 02 . ± 20 2 Units A A A W W/°C V mJ °C °C I @ VGS = 10V, TC = 100°C Continuous Drain Current D IM D P D @ TC = 25°C Pulsed Drain Current 1 Maximum Power Dissipation Linear Derating Factor VG S EA S TJ TS T G Gate-Source Voltage Single Pulse Avalanche Energy Operating Junction Storage Temperature Range Lead Temperature 20 . 4 -55 to 150 300(.06 from case for 10 sec) ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-Source Breakdown Voltage R DS(on) S a i D a n t - o r e ttc ri-oSuc On-State Resistance VGS(th) Gate Threshold Voltage I Zero Gate Voltage Drain DSS Current IS S Gate -to-Source Leakage Forward G IS S Gate -to-Source Leakage Reverse G Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gt-oDan(Mle” Cag aet-ri “ilr) hre t Turn-On Delay Time D(on) t Rise Time r t(off) Turn-Off Delay Time D t Fl Tm al ie r Min. 200 20 . - Typ. Max. Units V Test Conditions VG S = 0 , ID =1.0 mA, V VG S = 1 V ID = 3 5 A 3 0, . VG S = 1 V ID = 5 5 A 3 0, . VDS = VG S, D = 250 µA I VD S = 1 0 V VG S = 0V 6, VD S = 1 0 V VG S = 0 , TJ = 125°C 6, V VG S = 20 V VG S = - 0 V 2 VG S = 1 V ID = 5 5 A 0, . VD S = 100 V See note 4 VD D = 7 V ID = 3 5 A RG =7.5 7, ., See note 4 - .0 4 .2 4 40 . 25 250 100 -100 42.1 53 . 28.1 30 50 50 40 V µA nA nA nC nC nC ns ns ns ns Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage VS D t Reverse Recovery Time t r r 3 Typ. - Max. 14 . 500 Units V ns Test Conditions TJ = 2 ° , IS = 5 5 A 3,VG S = 0 V 3 5C . TJ = 2 ° , IF= 5 5 A id < 100 A/µs 5C . ,d/t Thermal Resistance Parameter R thJC Junction-to-Case R thCS Case-to-sink R thJA Junction-to-Ambient Min. - Typ. 0.21 - Max. 50 . 175 Units Test Conditions °C/W Mutn sraefa, onig ufc lt smooth, and greased Typical socket mount 1 . 2. 3 . 4. Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue eeiie aig us it iie y aiu ucin eprtr. 0 , trig C 0 . @VD D= 5 V S a t n TJ = 25° , L = 1 0 µH + 10%, RG = 25 , Peak IL = 5 5 A P l e w d h < 300 µs; Duty Cycle < 2 % us it See MIL-S-19500/557 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802 ABSOLUTE MAXIMUM RATINGS ( C = 25°C unless otherwise noted T Parameter I @ VGS = 10V, TC = 25°C D Continuous Drain Current JANTXV, JANTX, 2N6800 30 . 20 . 14 25 02 . ± 20 2 Units A A A W W/°C V mJ °C °C I @ VGS = 10V, TC = 100°C Continuous Drain Current D IM D P D @ TC = 25°C Pulsed Drain Current 1 Maximum Power Dissipation Linear Derating Factor VG S EA S TJ TS T G Gate-Source Voltage Single Pulse Avalanche Energy Operating Junction Storage Temperature Range Lead Temperature 05 .1 4 -55 to 150 300(.06 from case for 10 sec) ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-Source Breakdown Voltage R DS(on) S a i D a n t - o r e ttc ri-oSuc On-State Resistance VGS(th) Gate Threshold Voltage I Zero Gate Voltage Drain DSS Current IS S Gate -to-Source Leakage Forward G IS S Gate -to-Source Leakage Reverse G Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gt-oDan(Mle” Cag aet-ri “ilr) hre t Turn-On Delay Time D(on) t Rise Time r t(off) Turn-Off Delay Time D t Fl Tm al ie r Min. 400 20 . - Typ. Max. Units V Test Conditions VG S = 0 , ID =1.0 mA, V VG S = 1 V ID = 2 0 A 3 0, . VG S = 1 V ID = 3 0 A 3 0, . VDS = VG S, D = 250 µA I VD S = 3 0 V VG S = 0V 2, VD S = 3 0 V VG S = 0 , TJ = 125°C 2, V VG S = 20 V VG S = - 0 V 2 VG S = 1 V ID = 3.0A 0, VD S = 200 V See note 4 VD D = 1 6 V ID = 2 A RG =7.5 7, , See note 4 - 10 . 1.10 40 . 25 250 100 -100 33 58 . 16.6 30 35 55 35 V µA nA nA nC nC nC ns ns ns ns Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage VS D t Reverse Recovery Time t r r Thermal Resistance Parameter Junction-to-Case R thJC R thCS Case-to-sink R thJA Junction-to-Ambient Typ. - Max. 14 . 700 Units V ns Test Conditions TJ = 2 ° , IS = 3 A 3,VG S = 0 V 5C TJ = 2 ° , IF= 3 0 A id 100A/µs 5C . ,d/t< 3 Min. - Typ. 0.21 - Max. 50 . 175 Units Test Conditions °C/W Mutn sraefa, onig ufc lt smooth, and greased Typical socket mount 1 . 2. 3 . 4. Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue eeiie aig us it iie y aiu ucin eprtr. 0 , trig C 0 . @VD D= 5 V S a t n TJ = 25° , L = 1 0 µH + 10%, RG = 25 , Peak IL = 3 0 A P l e w d h < 300 µs; Duty Cycle < 2 % us it See MIL-S-19500/557 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802 ABSOLUTE MAXIMUM RATINGS ( C = 25°C unless otherwise noted T Parameter I @ VGS = 10V, TC = 25°C D Continuous Drain Current JANTXV, JANTX, 2N6802 25 . 15 . 11 25 0.20 ± 20 2 Units A A A W W/°C V mJ °C °C I @ VGS = 10V, TC = 100°C Continuous Drain Current D IM D P D @ TC = 25°C Pulsed Drain Current 1 Maximum Power Dissipation Linear Derating Factor VG S EA S TJ TSTG Gate-Source Voltage Single Pulse Avalanche Energy Operating Junction Storage Temperature Range Lead Temperature .5 3 4 -55 to 150 300 (.06 from case for 10 sec) ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-Source Breakdown Voltage R DS(on) S a i D a n t - o r e ttc ri-oSuc On-State Resistance VGS(th) Gate Threshold Voltage I Zero Gate Voltage Drain DSS Current IS S Gate -to-Source Leakage Forward G IS S Gate -to-Source Leakage Reverse G Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gt-oDan(Mle” Cag aet-ri “ilr) hre t Turn-On Delay Time D(on) t Rise Time r t(off) Turn-Off Delay Time D t Fl Tm al ie r Min. 500 20 . - Typ. Max. Units V Test Conditions VG S = 0 , ID =1.0 mA, V VG S = 1 V ID = 1 5 A 3 0, . VG S = 1 V ID = 2 5 A 3 0, . VDS = VG S, D = 250 µA I VD S = 4 0 V VG S = 0V 0, VD S = 4 0 V VG S = 0 , TJ = 125°C 0, V VG S = 20 V VG S = - 0 V 2 VG S = 1 V ID = 2 5 A 0, . VD S = 250 V See note 4 VD D = 2 5 V ID = 1 5 A RG = 7.5 2, ., See note 4 - 15 . 16 . 40 . 25 250 100 -100 29.5 45 . 28.1 30 30 55 30 V µA nA nA nC nC nC ns ns ns ns Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage VS D t Reverse Recovery Time t r r Thermal Resistance Parameter Junction-to-Case R thJC R thCS Case-to-sink R thJA Junction-to-Ambient Typ. - Max. 14 . 900 Units V ns Test Conditions TJ = 2 ° , IS = 2 5 A 3,VG S = 0 V 5C . TJ = 2 ° , IF= 2 5 A id 100A/µs 3 5C . ,d/t< Min. - Typ. 0.21 - Max. 50 . 175 Units Test Conditions °C/W Mutn sraefa, onig ufc lt smooth, and greased Typical socket mount 1 . 2. 3 . 4. Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue eeiie aig us it iie y aiu ucin eprtr. 0 , trig C 0 . @VD D= 5 V S a t n TJ = 25° , L = 1 0 uH + 10%, RG = 25 , Peak IL = 2 5 A P l e w d h < 300 µs; Duty Cycle < 2 % us it See MIL-S-19500/557 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246