OM11N55

OM11N60SA OM11N55SA POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 600V & 550V, 11 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • • Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Ceramic Feedthroughs Also Available DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. The device breakdown ratings provide a substantial voltage margin for stringent applications such as 270 VDC aircraft power and/or rectified 230 VAC power (line operation). They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. MAXIMUM RATINGS PART NUMBER OM11N60 OM11N55 VDS 600V 550V RDS(on) .50 .44 ID(MAX) 11A 11A 3.1 SCHEMATIC DRAIN GATE SOURCE 4 11 R1 Supersedes 2 04 R0 3.1 - 19 3.1 OM11N60SA - OM11N55SA ELECTRICAL CHARACTERISTICS: STATIC P/N OM11N60SA Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSS IDSS Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 .47 11.0 0.1 0.2 2.0 600 TC = 25° unless otherwise noted ELECTRICAL CHARACTERISTICS: STATIC P/N OM11N55SA Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IDSS Gate-Threshold Voltage Gate-Body Leakage Forward Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 11.0 0.1 0.2 2.0 550 TC = 25° unless otherwise noted Min. Typ. Max. Units Test Conditions V 4.0 ± 100 0.25 1.0 V nA mA mA A 3.1 .50 1.0 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = ± 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C VDS > ID(on) x RDS(on), VGS = 10 V VGS = 10 V, ID = 5.5 A VGS = 10 V, ID = 5.5 A VGS = 10 V, ID = 5.5 A, TC = 125 C Min. Typ. Max. Units Test Conditions V 4.0 ±100 0.25 1.0 V nA mA mA A 3.3 .37 .44 .88 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = ± 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C VDS > ID(on) x RDS(on), VGS = 10 V VGS = 10 V, ID = 5.5 A VGS = 10 V, ID = 5.5 A VGS = 10 V, ID = 5.5 A, TC = 125 C VDS(on) Static Drain-Source On-State VDS(on) Static Drain-Source On-State RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 DYNAMIC gfs Ciss Coss Crss Td(on) tr Td(off) tf Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 5.0 3000 440 220 55 75 225 135 S(W ) VDS 2 VDS(on), ID = 5.5 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 210 V, ID @ 7.0 A Rg = 5 W , RL = 30 W (MOSFET) switching times are essentially independent of operating temperature. DYNAMIC gfs Ciss Coss Crss Td(on) tr Td(off) tf Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 5.0 3000 440 220 55 75 225 135 S(W ) VDS 2 VDS(on), ID = 5.5 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 210 V, ID @ 7.0 A Rg = 5 W , RL = 30 W (MOSFET) switching times are essentially independent of operating temperature. BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 700 - 1.4 V ns - 52 A - 11 A Modified MOSPOWER symbol showing the integral P-N Junction rectifier. G D BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM S Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 700 - 11 - 52 - 1.4 TC = 25 C, IS = -11 A, VGS = 0 TJ = 150 C,IF = IS, dlF/ds = 100 A/ms VSD trr ns 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. (W ) A A V (W ) 3.1 - 20 Modified MOSPOWER symbol showing the integral P-N Junction rectifier. G D S TC = 25 C, IS = -11 A, VGS = 0 TJ = 150 C,IF = IS, dlF/ds = 100 A/ms OM11N60SA - OM11N55SA ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol VDGR VDS ID ID IDM PD PD Parameter Drain Source Voltage Drain Gate Voltage (RGS = 1.0 M ) Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 OM11N60 600 600 11 7.2 52 125 50 1.0 .020 OM11N55 550 550 11 7.2 52 125 50 1.0 .020 Units V V A A A W W W/°C W/°C °C °C Max. Power Dissipation @ TC = 25°C Max. Power Dissipation @ TC = 100°C Linear Derating Factor Jct. to Case Linear Derating Factor Jct. to Ambient TJ, Tstg Operating and Storage Temp. Range Lead Temperature (1/16" from case for 10 sec.) -55 to 150 300 300 1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%. THERMAL RESISTANCE (Maximum at TA = 25°C) RthJC RthJA Junction-to-Case Junction-to-Ambient (Free Air Operation) 1.0 50 1.0 50 °C/W °C/W 3.1 3.1 - 21 OM11N60SA - OM11N55SA MECHANICAL OUTLINES .144 DIA. .545 .535 .050 .040 .685 .665 .800 .790 .550 .530 .550 .510 .045 .035 .150 TYP. .260 .249 .005 .150 TYP. TO-254 AA Package .940 .740 .540 .200 .100 2 PLCS. .040 .260 MAX 3.1 .290 .125 2 PLCS. .250 .125 DIA. 2 PLS. .540 .500 MIN. .150 .300 .040 DIA. 3 PLCS. .150 Omnirel AZ Package For Z-Pack configuration, add letter “Z” to part number, Example - OMXXXXSAZ Standard Products are supplied with glass feedthroughs, for ceramic feedthroughs, add letter “C” to part number, Example - OMXXXXCSA 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246