PD-90431E
IRFF230
JANTX2N6798
JANTXV2N6798
200V, N-CHANNEL
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET ® TRANSISTORS
THRU-HOLE TO-205AF (TO-39)
REF: MIL-PRF-19500/557
Product Summary
Part Number
BVDSS
RDS(on)
ID
IRFF230
200V
0.40
5.5A
TO-39
Description
Features
®
The HEXFET technology is the key to International
Rectifier’s HiRel advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on state
resistance combined with high trans conductance.
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
ESD Rating: Class 1C per MIL-STD-750,
Method 1020
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching and temperature stability of the
electrical parameters.
They are well suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers
and high energy pulse circuits.
Absolute Maximum Ratings
Symbol
ID1 @ VGS = 10V, TC = 25°C
Value
Parameter
Continuous Drain Current
5.5
ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current
3.5
Units
A
IDM @ TC = 25°C
Pulsed Drain Current
22
PD @ TC = 25°C
Maximum Power Dissipation
25
W
Linear Derating Factor
0.20
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
207.5
mJ
A
IAR
EAR
dv/dt
TJ
TSTG
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
5.5
2.5
4.5
-55 to + 150
mJ
V/ns
°C
300 (0.063 in. /1.6 mm from case for 10s)
0.98 (Typical)
g
For Footnotes, refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2018-11-20
IRFF230
JANTX2N6798/JANTXV2N6798
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Symbol
BVDSS
BVDSS/TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
QG
QGS
QGD
td(on)
tr
td(off)
tf
Min. Typ. Max. Units
200
–––
–––
–––
2.0
2.5
–––
–––
–––
–––
7.4
2.5
6.0
–––
–––
–––
–––
––– –––
0.25 –––
––– 0.40
––– 0.42
–––
4.0
––– –––
–––
25
––– 250
––– 100
––– -100
––– 42.07
––– 5.29
––– 28.11
–––
30
–––
50
–––
50
–––
40
Test Conditions
V
V/°C
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID2 = 3.5A
VGS = 10V, ID1 = 5.5A
V
VDS = VGS, ID = 250µA
S
VDS = 15V, ID2 = 3.5A
VDS =160 V, VGS = 0V
µA
VDS = 160V,VGS = 0V,TJ =125°C
VGS = 20V
nA
VGS = -20V
ID1 = 5.5A
nC VDS = 100V
VGS = 10V
VDD = 100V
ID1 = 5.5A
ns
RG = 7.5
VGS = 10V
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25
in from package) with Source wire
internally bonded from Source pin to Drain
pin
Ls +LD
Total Inductance
–––
7.0
–––
nH
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
600
250
80
–––
–––
–––
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Symbol
Min. Typ. Max. Units
Test Conditions
IS
Continuous Source Current (Body Diode)
–––
–––
5.5
ISM
Pulsed Source Current (Body Diode)
–––
–––
22
VSD
Diode Forward Voltage
–––
–––
1.4
V
TJ = 25°C,IS = 5.5A, VGS = 0V
trr
Reverse Recovery Time
–––
–––
500
ns
TJ = 25°C, IF = 5.5A, VDD ≤ 50V
Qrr
Reverse Recovery Charge
–––
–––
6.0
µC
di/dt = 100A/µs
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
A
Thermal Resistance
Symbol
Parameter
Min.
Typ.
Max.
RJC
Junction-to-Case
–––
–––
5.0
RJA
Junction-to-Ambient (Typical Socket Mount)
–––
–––
175
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = 50V, starting TJ = 25°C, L = 13.7mH, Peak IL = 5.5A, VGS = 10V, RG = 25 Ω
ISD 5.5A, di/dt 120A/µs, VDD 200V, TJ 150°C, Suggested RG = 7.5 Ω
Pulse width 300 µs; Duty Cycle 2%
2
International Rectifier HiRel Products, Inc.
2018-11-20
IRFF230
JANTX2N6798/JANTXV2N6798
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
3
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
International Rectifier HiRel Products, Inc.
2018-11-20
IRFF230
JANTX2N6798/JANTXV2N6798
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 8. Maximum Safe Operating Area
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
International Rectifier HiRel Products, Inc.
2018-11-20
IRFF230
JANTX2N6798/JANTXV2N6798
Fig 12a. Unclamped Inductive Test Circuit
Fig 13a. Gate Charge Waveform
Fig 14a. Switching Time Test Circuit
5
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 14b. Switching Time Waveforms
International Rectifier HiRel Products, Inc.
2018-11-20
IRFF230
JANTX2N6798/JANTXV2N6798
Case Outline and Dimensions - TO-205AF (TO-39)
www.infineon.com/irhirel
Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555
Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776
San Jose, California 95134, USA Tel: +1 (408) 434-5000
Data and specifications subject to change without notice.
6
International Rectifier HiRel Products, Inc.
2018-11-20
IRFF230
JANTX2N6798/JANTXV2N6798
IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
7
International Rectifier HiRel Products, Inc.
2018-11-20