2N6798U

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6798 2N6798U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Drain – Source Voltage Gate – Source Voltage Continuous Drain Current TC = +25°C Continuous Drain Current TC = +100°C Max. Power Dissipation Drain to Source On State Resistance Operating & Storage Temperature Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C (2) VGS = 10Vdc, ID = 3.5A ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 0.25mA VDS ≥ VGS, ID = 0.25mA, Tj = +125°C VDS ≥ VGS, ID = 0.25mA, Tj = -55°C Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C Drain Current VGS = 0V, VDS = 160V VGS = 0V, VDS = 160V, Tj = +125°C Static Drain-Source On-State Resistance VGS = 10V, ID = 3.5A pulsed VGS = 10V, ID = 5.5A pulsed Tj = +125°C VGS = 10V, ID = 3.5A pulsed Diode Forward Voltage VGS = 0V, ID = 8.0A pulsed T4-LDS-0049 Rev. 1 (072807) Symbol V(BR)DSS Min. 200 Max. Unit Vdc Symbol VDS VGS ID1 ID2 Ptl Rds(on) Top, Tstg Value 200 ± 20 5.5 3.5 25 0.4 (1) (2) Unit Vdc Vdc Adc Adc W Ω °C -55 to +150 TO-205AF (formerly TO-39) VGS(th)1 VGS(th)2 VGS(th)3 2.0 1.0 4.0 5.0 Vdc IGSS1 IGSS2 ±100 ±200 nAdc U – 18 LCC IDSS1 IDSS2 rDS(on)1 rDS(on)2 rDS(on)3 VSD 25 0.25 0.4 0.42 0.75 1.4 µAdc mAdc Ω Ω Ω Vdc Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge SWITCHING CHARACTERISTICS Parameters / Test Conditions Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time Diode Reverse Recovery Time ID = 5.5A, VGS = 10Vdc, Gate drive impedance = 7.5Ω, VDD = 77Vdc di/dt ≤ 100A/µs, VDD ≤ 50V, IF = 5.5A Symbol td(on) tr td(off) tf trr Min. Max. 30 50 50 40 500 Unit Symbol Qg(on) Qgs Qgd Min. Max. 42.07 5.29 28.11 Unit nC VGS = 10V, ID = 5.5A VDS = 50V ns ns T4-LDS-0049 Rev. 1 (072807) Page 2 of 2