2N6802

PD-90433D IRFF430 JANTX2N6802 JANTXV2N6802 REPETITIVE AVALANCHE AND dv/dt RATED ® HEXFET TRANSISTORS THRU-HOLE - TO-205AF (TO-39) REF:MIL-PRF-19500/557 500V, N-CHANNEL Product Summary Part Number IRFF430 BVDSS RDS(on) 500V 1.5Ω ID 2.5A ® The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low onstate resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. TO-39 Features: Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling n ESD Rating: Class 1C per MIL-STD-750, Method 1020 n n n n n Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight Units 2.5 1.5 10 25 0.20 ±20 184 2.5 2.5 3.5 -55 to 150 A W W/°C V mJ A mJ V/ns °C 300 (0.063 in. (1.6mm) from case for 10s) 0.98 (typical) g For footnotes refer to the last page www.irf.com 1 01/27/15 IRFF430, JANTX2N6802 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) BVDSS ∆BVDSS/∆TJ RDS(on) VGS(th) g fs IDSS IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Parameter Min Drain-to-Source Breakdown Voltage 500 — — V — 0.43 — V/°C — — 2.0 1.5 — — — — — — — — 1.5 1.725 4.0 — 25 250 — — 19.8 2.2 5.5 — — — — — — — — — — — — — — 7.0 100 -100 29.5 4.6 19.7 30 30 55 30 — Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Typ Max Units Ω V S µA nA nC Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 10V, ID =1.5A à VGS =10V, ID = 2.5A à VDS = VGS, ID = 250µA V DS = 15V, IDS = 1.5A à VDS = 400V, VGS = 0V VDS = 400V VGS = 0V, TJ = 125°C VGS = 20V V GS = -20V VGS =10V, ID =2.5A VDS= 250V VDD = 250V, ID = 2.5A, VGS =10V, RG = 7.5Ω ns nH Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 610 135 65 — — pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD trr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 2.5 10 1.4 900 7.0 Test Conditions A V ns µC Tj = 25°C, IS = 2.5A, VGS = 0V à Tj = 25°C, IF = 2.5A, di/dt ≤ 100A/µs VDD ≤ 50V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max — — — — 5.0 175 Units °C/W Test Conditions Typical socket mount. Note: Corresponding Spice and Saber models are available on International Rectifier website. For footnotes refer to the last page 2 www.irf.com IRFF430, JANTX2N6802 Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs.Temperature 3 IRFF430, JANTX2N6802 13 a& b Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ID, Drain-to-Source Current (A) 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 100µs 1 1ms 10ms 0.1 Tc = 25°C Tj = 150°C Single Pulse 0.01 1 DC 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 8. Maximum Safe Operating Area www.irf.com IRFF430, JANTX2N6802 RD V DS V GS RG D.U.T. + -V DD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit VDS 90% Fig 9. Maximum Drain Current Vs. CaseTemperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFF430, JANTX2N6802 L VDS D.U.T RG 10V 20V IAS DRIVER + - VDD 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS A EAS , Single Pulse Avalanche Energy (mJ) 400 15V TOP 300 BOTTOM ID 1.1A 1.6A 2.5A 200 100 0 25 tp 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 10 V QGS .2µF .3µF D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 12V IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFF430, JANTX2N6802 Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 50V, Starting TJ = 25°C, L = 59mH Peak IAS = 2.5A, VGS =10V, RG= 25Ω  ISD ≤ 2.5A, di/dt ≤ 75A/µs, VDD ≤ 500V, TJ ≤ 150°C, Suggested RG =7.5 Ω à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Case Outline and Dimensions —TO-205AF (TO-39) LEGEND 1- SOURCE 2- GATE 3- DRAIN IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/2015 www.irf.com 7