AUIRF1405ZS-7P

AUTOMOTIVE GRADE HEXFET® Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Automotive Qualified * l l l l l l l D AUIRF1405ZS-7P D2Pak- 7 Pin RDS(on) = 4.9mΩ ID = 120A S S (Pin 2, 3, 5, 6, 7) G (Pin 1) This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Package Type VDSS = 55V G Description Base Part Number AUIRF1405ZS-7P D2Pak 7 Pin Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 Orderable Part Number AUIRF1405ZS-7P AUIRF1405ZS-7TRL Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Max. Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) 150 I D @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9) 100 I D @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 120 I D @ TC = 25°C c Units A 590 I DM Pulsed Drain Current P D @TC = 25°C Maximum Power Dissipation 230 W Linear Derating Factor 1.5 W/°C V GS Gate-to-Source Voltage E AS Single Pulse Avalanche Energy (Thermally Limited) c I AR Avalanche Current E AR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range d g ± 20 V 250 mJ See Fig.12a,12b,15,16 A mJ -55 to + 175 °C 300 (1.6mm from case ) Soldering Temperature, for 10 seconds Thermal Resistance i Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient (PCB Mount, steady state) hi Typ. Max. ––– 0.65 ––– 40 Units °C/W HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015 AUIRF1405ZS-7P Static @ TJ = 25°C (unless otherwise specified) Min. Typ. Max. Units Drain-to-Source Breakdown Voltage Parameter 55 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.054 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) SMD Static Drain-to-Source On-Resistance ––– 3.7 4.9 mΩ VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 150μA gfs Forward Transconductance 108 ––– ––– S VDS = 10V, ID = 88A IDSS Drain-to-Source Leakage Current ––– ––– 20 μA ––– ––– 250 V(BR)DSS IGSS Conditions VGS = 0V, ID = 250μA VGS = 10V, ID = 88A e VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = 20V Qg Total Gate Charge ––– 150 230 nC ID = 88A Q gs Gate-to-Source Charge ––– 37 ––– VDS = 44V Q gd Gate-to-Drain ("Miller") Charge ––– 64 ––– VGS = 10V td(on) Turn-On Delay Time ––– 16 ––– tr Rise Time ––– 140 ––– td(off) Turn-Off Delay Time ––– 170 ––– RG = 5.0Ω tf Fall Time ––– 130 ––– VGS = 10V LD Internal Drain Inductance ––– 4.5 ––– VGS = -20V ns e VDD = 28V ID = 88A nH d Between lead, D 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package G and center of die contact S Ciss Input Capacitance ––– 5360 ––– Coss Output Capacitance ––– 1310 ––– Crss Reverse Transfer Capacitance ––– 340 ––– ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 6080 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 920 ––– VGS = 0V, VDS = 44V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 1700 ––– VGS = 0V, VDS = 0V to 44V Min. Typ. Max. ––– ––– 150 pF VGS = 0V VDS = 25V Diode Characteristics Parameter IS Continuous Source Current (Body Diode) Pulsed Source Current VSD (Body Diode) Diode Forward Voltage ––– trr Reverse Recovery Time ––– Q rr Reverse Recovery Charge ––– ––– ––– Conditions MOSFET symbol A ISM c Units D showing the 590 integral reverse ––– 1.3 V p-n junction diode. TJ = 25°C, IS = 88A, VGS = 0V 63 95 ns TJ = 25°C, IF = 88A, VDD = 28V 160 240 nC di/dt = 100A/μs G e S e Notes:  Repetitive rating; pulse width limited by … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical max. junction temperature. (See fig. 11). repetitive avalanche performance. ‚ Limited by TJmax, starting TJ = 25°C, † This is applied to D2Pak, when mounted on 1" square PCB L=0.064mH, RG = 25Ω, IAS = 88A, VGS =10V. ( FR-4 or G-10 Material ). For recommended footprint and Part not recommended for use above this value. soldering techniques refer to application note #AN-994. ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. ‡ Rθ is measured at TJ of approximately 90°C. „ Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015 AUIRF1405ZS-7P 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 4.5V 10 BOTTOM 4.5V 10 ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH Tj = 175°C Tj = 25°C 1 0.1 1 10 1 100 1000 0.1 V DS, Drain-to-Source Voltage (V) 10 100 1000 Fig 2. Typical Output Characteristics 200 Gfs, Forward Transconductance (S) 1000 ID, Drain-to-Source Current (Α) 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 T J = 175°C 10 T J = 25°C 1 VDS = 25V ≤60μs PULSE WIDTH 0.1 0 2 4 6 8 10 12 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V www.irf.com © 2015 International Rectifier 175 TJ = 25°C 150 125 100 TJ = 175°C 75 50 VDS = 10V 25 380μs PULSE WIDTH 0 0 25 50 75 100 125 150 175 200 ID,Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance vs. Drain Current Submit Datasheet Feedback February 27, 2015 AUIRF1405ZS-7P 100000 12.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 88A C, Capacitance(pF) C oss = C ds + C gd 10000 Ciss Coss Crss 1000 100 VDS= 44V VDS= 28V 10.0 8.0 6.0 4.0 2.0 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) 150 200 10000 ID, Drain-to-Source Current (A) 1000 ISD, Reverse Drain Current (A) 100 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage T J = 175°C 100 T J = 25°C 10 VGS = 0V 1 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 50 QG Total Gate Charge (nC) www.irf.com © 2015 International Rectifier OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100μsec 100 1msec 10 DC 1 10msec Tc = 25°C Tj = 175°C Single Pulse 0.1 0.01 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Submit Datasheet Feedback February 27, 2015 AUIRF1405ZS-7P 150 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 ID, Drain Current (A) 125 100 75 50 25 0 25 50 75 100 125 150 ID = 88A VGS = 10V 2.0 1.5 1.0 0.5 175 -60 -40 -20 0 T C , Case Temperature (°C) 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 10. Normalized On-Resistance vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 τJ SINGLE PULSE ( THERMAL RESPONSE ) 0.001 R1 R1 τJ τ1 τ1 R2 R2 τ2 R3 R3 τ3 τ2 Ci= τi/Ri Ci i/Ri τC τ τ3 Ri (°C/W) 0.1707 τi (sec) 0.000235 0.1923 0.000791 0.2885 0.008193 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015 1 AUIRF1405ZS-7P 15V D.U.T RG VGS 20V + V - DD IAS A 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) DRIVER L VDS 1000 ID 14A 23A BOTTOM 88A TOP 800 600 400 200 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50KΩ .2μF 12V .3μF D.U.T. + V - DS VGS(th) Gate threshold Voltage (V) 4.5 VG 4.0 3.5 3.0 2.5 2.0 ID = 150μA ID = 250μA ID = 1.0mA ID = 1.0A 1.5 1.0 -75 -50 -25 VGS 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 www.irf.com © 2015 International Rectifier Fig 14. Threshold Voltage vs. Temperature Submit Datasheet Feedback February 27, 2015 AUIRF1405ZS-7P 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 150°C and Tstart =25°C (Single Pulse) 100 0.01 0.05 0.10 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and Tstart = 150°C. 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 300 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 88A 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature 7 www.irf.com © 2015 International Rectifier Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Submit Datasheet Feedback February 27, 2015 AUIRF1405ZS-7P D.U.T Driver Gate Drive ƒ + ‚ - P.W. + „ D.U.T. ISD Waveform Reverse Recovery Current + V DD • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test P.W. Period *  RG D= VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - Period + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V DS V GS RG RD D.U.T. + -V DD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015 AUIRF1405ZS-7P D2Pak - 7 Pin Package Outline Dimensions are shown in millimeters (inches) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015 AUIRF1405ZS-7P D2Pak - 7 Pin Part Marking Information Part Number AUF1405ZS-7P YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code D2Pak - 7 Pin Tape and Reel Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 10 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015 AUIRF1405ZS-7P † Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. MSL1 7L-D2 PAK †† Machine Model Class M4(425V) (per AEC-Q101-002) Human Body Model Class H1C(2000V) (per AEC-Q101-001) Charged Device Model Class C5(1125V) (per AEC-Q101-005) †† ESD †† RoHS Compliant † Yes Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Highest passing voltage. 11 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015 AUIRF1405ZS-7P IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245 Tel: (310) 252-7105 12 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015 AUIRF1405ZS-7P Revision History Date 2/27/2015 13 Comments • Corrected part number for TRL from "AUIRF1405ZS-7PTRL" to "AUIRF1405ZS-7TRL" on page1. www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015