BAR6405WH6327XTSA1

BAR64... Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.17 pF) • Low forward resistance (typ. 2.1 Ω @ 10 mA) • Very low signal distortion • Pb-free (RoHS compliant) package • Qualified according AEC Q1011) BAR64-02EL BAR64-02V BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W !  ,  ! ,  ,  Type BAR64-02EL* BAR64-02V BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W BAR64-06 BAR64-06W 1*BAR64-02EL BAR64-06 BAR64-06W ! ,  Package TSLP-2-19 SC79 SOD323 SOT23 SOT323 SOT23 SOT323 SOT23 SOT323 ,  ,  Configuration single, leadless single single series series common cathode common cathode common anode common anode LS(nH) 0.4 0.6 1.8 1.8 1.4 1.8 1.4 1.8 1.4 Marking OE O blue 2 PPs PPs PRs PRs PSs PSs is not qualified according AEC Q101 1 2013-06-10 BAR64... Maximum Ratings at T A = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 150 V Forward current IF 100 mA Total power dissipation Ptot Value Unit mW BAR64-02EL, T S ≤ 135 °C 250 BAR64-02V, TS ≤ 125 °C 250 BAR64-03W, TS ≤ 25 °C 250 BAR64-04, -05, -06, TS ≤ 65 °C 250 BAR64-04W, -05W, -06W, TS ≤ 115 °C 250 150 Junction temperature Tj Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 °C Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value BAR64-02EL ≤ 60 BAR64-02V, -04W, -05W, -06W ≤ 140 BAR64-03W ≤ 370 BAR64-04, -05, -06 ≤ 340 Unit 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) Electrical Characteristics at T A = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 150 - - - - 1.1 DC Characteristics Breakdown voltage V(BR) V I(BR) = 5 µA Forward voltage VF IF = 50 mA 2 2013-06-10 BAR64... Electrical Characteristics at T A = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics Diode capacitance pF CT VR = 20 V, f = 1 MHz - 0.23 0.35 VR = 0 V, f = 100 MHz - 0.3 - VR = 0 V, f = 1...1.8 GHz, BAR64-02EL - 0.13 - VR = 0 V, f = 1...1.8 GHz, all other - 0.17 - Reverse parallel resistance kΩ RP VR = 0 V, f = 100 MHz - 10 - VR = 0 V, f = 1 GHz - 4 - VR = 0 V, f = 1.8 GHz - 3 - Forward resistance Ω rf IF = 1 mA, f = 100 MHz - 12.5 20 IF = 10 mA, f = 100 MHz - 2.1 2.8 IF = 100 mA, f = 100 MHz - 0.85 1.35 τ rr - 1550 - ns I-region width WI - 50 - µm Insertion loss1) IL Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 Ω dB IF = 3 mA, f = 1.8 GHz - 0.32 - IF = 5 mA, f = 1.8 GHz - 0.23 - IF = 10 mA, f = 1.8 GHz - 0.16 - VR = 0 V, f = 0.9 GHz - 22 - VR = 0 V, f = 1.8 GHz - 17 - VR = 0 V, f = 2.45 GHz - 14.5 - VR = 0 V, f = 5.6 GHz - 8.5 - Isolation1) 1BAR64-02EL ISO in series configuration, Z = 50 Ω 3 2013-06-10 BAR64... Diode capacitance CT = ƒ (VR) Reverse parallel resistance RP = ƒ(VR) f = Parameter f = Parameter 10 4 0.7 KOhm pF 0.5 Rp CT 10 3 1 MHz 100 MHz 1 GHz 1.8 GHz 0.4 100 MHz 1 GHz 1.8 GHz 10 2 10 1 0.3 10 0 0.2 0.1 0 2 4 6 8 10 12 14 16 V 10 -1 0 20 5 10 15 20 25 V 30 VR 40 VR Forward resistance rf = ƒ (IF) Forward current IF = ƒ (VF) f = 100MHz TA = Parameter 10 3 10 0 A Ohm 10 -1 10 2 IF RF 10 -2 10 1 10 -3 -40 °C 25 °C 85 °C 125 °C 10 -4 10 0 10 -5 10 -1 -2 10 10 -1 10 0 10 1 mA 10 10 -6 0 2 IF 0.2 0.4 0.6 0.8 V 1.2 VF 4 2013-06-10 BAR64... Intermodulation intercept point Forward current IF = ƒ (TS ) IP3 = ƒ (IF ); f = Parameter BAR64-02EL 10 2 120 mA 100 f=900MHz 90 f=1800MHz IF IP3 80 dBm 70 60 50 40 30 20 10 10 1 10 -1 10 0 mA 10 0 0 1 30 60 90 120 IF 165 TS Forward current IF = ƒ (TS ) Forward current IF = ƒ (TS ) BAR64-02V BAR64-04, BAR64-05, BAR64-06 120 120 mA mA 100 100 90 90 80 80 IF IF °C 70 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 15 30 45 60 75 90 105 120 °C 0 0 150 TS 15 30 45 60 75 90 105 120 °C 150 TS 5 2013-06-10 BAR64... Forward current IF = ƒ (TS ) BAR64-04W, BAR64-05W, BAR64-06W 120 mA 100 90 IF 80 70 60 50 40 30 20 10 0 0 15 30 45 60 90 105 120 °C 75 150 TS Permissible Puls Load RthJS = ƒ (t p) Permissible Pulse Load BAR64-02EL IFmax / IFDC = ƒ (t p) BAR64-02EL 10 2 10 2 IFmax/IFDC RthJS K/W 10 1 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 2013-06-10 BAR64... Permissible Puls Load RthJS = ƒ (t p) Permissible Pulse Load BAR64-02V IFmax / IFDC = ƒ (t p) BAR64-02V 10 3 10 2 IFmax / IFDC K/W RthJS 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 - 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 10 -1 tp s 10 1 10 0 tp Permissible Puls Load RthJS = ƒ (t p) Permissible Pulse Load BAR64-04, BAR64-05, BAR64-06 IFmax / IFDC = ƒ (t p) BAR64-04, BAR64-05, BAR64-06 10 3 10 2 IFmax/IFDC K/W RthJS 10 2 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 - s 10 10 0 -6 10 0 tP 10 -5 10 -4 10 -3 10 -2 s tP 7 2013-06-10 BAR64... Permissible Puls Load RthJS = ƒ (t p) Permissible Pulse Load BAR64-04W, BAR64-05W, BAR64-06W IFmax / IFDC = ƒ (t p) BAR64-04W, BAR64-05W, BAR64-06W 3 10 10 2 IFmax/IFDC K/W RthJS 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 - 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 10 -1 tP s 10 1 tP Insertion loss IL = -|S21|2 = ƒ(f) Isolation ISO = -|S21 |2 = ƒ(f) IF = Parameter VR = Parameter BAR64-02EL in series configuration, Z = 50Ω BAR64-02EL in series configuration, Z = 50Ω 0 0 dB dB 100 mA |S21|2 |S21|2 -0.1 10 mA -0.15 -0.2 -10 -15 5 mA -0.25 -20 3 mA -0.3 -25 -0.35 -0.4 0 1 2 3 4 GHz -30 0.5 6 f 0V 1V 10 V 1.5 2.5 3.5 4.5 GHz 6.5 f 8 2013-06-10 Package SC79 9 BAR64... 2013-06-10 BAR64... Date Code marking for discrete packages with one digit (SCD80, SC79, SC75 1) ) CES-Code Month 2 0 03 2 0 04 2005 2006 2 0 07 2008 2009 2010 2011 2012 2 0 13 2014 01 a p A P a p A P a p A P 02 b q B Q b q B Q b q B Q 03 c r C R c r C R c r C R 04 d s D S d s D S d s D S 05 e t E T e t E T e t E T 06 f u F U f u F U f u F U 07 g v G V g v G V g v G V 08 h x H X h x H X h x H X 09 j y J Y j y J Y j y J Y 10 k z K Z k z K Z k z K Z 11 l 2 L 4 l 2 L 4 l 2 L 4 12 n 3 N 5 n 3 N 5 n 3 N 5 1) New Marking Layout for SC75, implemented at October 2005. . 10 2013-06-10 Package SOD323 11 BAR64... 2013-06-10 Package SOT23 BAR64... 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 12 2013-06-10 Package SOT323 BAR64... Package Outline 0.9 ±0.1 2 ±0.2 0.3 +0.1 -0.05 0.1 MAX. 3x 0.1 M 0.1 A 1 2 1.25 ±0.1 0.1 MIN. 2.1 ±0.1 3 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 0.8 1.6 0.6 0.65 0.65 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BCR108W Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 13 2013-06-10 Package TSLP-2-19 14 BAR64... 2013-06-10 BAR64... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 15 2013-06-10