BC369

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Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 20 V VCES Collector-Base Voltage 25 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.5 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units BC369 625 5.0 83.3 mW mW/°C °C/W 200 °C/W (continued) Electrical Characteristics Symbol BC369 PNP General Purpose Amplifier TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 20 V V(BR)CES Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 25 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V ICBO Collector-Cutoff Current IEBO Emitter-Cutoff Current VCB = 25 V, IE = 0 VCB = 25 V, IE = 0, TA = 150°C VEB = 5.0 V, IC = 0 µA mA µA 10 1.0 10 ON CHARACTERISTICS hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage IC = 5.0 mA, VCE = 10 V IC = 0.5 A, VCE = 1.0 V IC = 1.0 A, VCE = 1.0 V IC = 1.0 A, IB = 100 mA VBE(on) Base-Emitter On Voltage IC = 1.0 A, VCE = 1.0 V 50 85 60 375 0.5 V 1.0 V SMALL SIGNAL CHARACTERISTICS Current Gain - Bandwidth Product fT IC = 10 mA, VCE = 5.0 V, f = 35 MHz 45 MHz NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. 3 Typical Pulsed Current Gain vs Collector Current 300 V CE = 5.0V 250 V CESAT- COLLE CTOR-EMITTER VOLTAGE (V) h FE- TYP ICAL PULSED CURRE NT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 1 β = 10 0.8 200 125 °C 150 0.6 25 °C 0.4 100 - 40 °C 0.2 50 0 0.01 IC 0.1 1 - COLLECTOR CURRENT (A) 25 °C 2 0 0.01 - 40 °C 0.1 1 I C - COLLE CTOR CURRENT (A) 125 °C 3 (continued) Base-Emitter Saturation Voltage vs Collector Current β = 10 1 0.8 - 40 °C 25 °C 0.6 125 °C 0.4 1 IC 10 100 - COLLECTOR CURRENT ( mA) 1000 100 V CB = 2 0V 10 1 0.1 f T - GAIN BANDWIDTH PRODUCT (MHz) 25 50 75 100 125 T A - AM BIENT TE MPE RATURE (°C) 150 Base-Emitter ON Voltage vs Collector Current 1 0.8 - 40 °C 25 °C 0.6 125 °C 0.4 0.2 VCE = 5.0 V 1 1000 40 f = 1.0 MHz 30 20 10 0 0 10 20 V CB- COLLECTOR-BASE VOLTAGE (V) 30 Power Dissipation vs Ambient Temperature 700 250 V CE = 10V 200 150 100 50 0 10 100 I C - COLLECTOR CURRENT (mA) Collector-Base Capacitance vs Collector-Base Voltage Gain Bandwidth Product vs Collector Current P D - POWER DISSIPATION (mW) I CBO - COLLECTOR CURRENT (nA) Collector-Cutoff Current vs Ambient Temperature V BE(O N)- BASE-E MITTER ON VOLTAGE (V) (continued) COBO- COLLECTOR-BASE CAPACITANCE (pF) V BESAT - BASE-EMITTER VOLTAG E (V) Typical Characteristics 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 600 500 TO-92 400 300 200 100 0 0 25 50 75 100 TEMPER ATURE ( oC) 125 150 BC369 PNP General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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