BCW60, BCX70
NPN Silicon AF Transistors
• For AF input stages and driver applications
2
3
• High current gain
1
• Low collector-emitter saturation voltage
• Low noise between 30 Hz and 15 kHz
• Complementary types: BCW61, BCX71 (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
Pin Configuration
BCW60B
ABs
1=B
2=E
3=C
SOT23
BCW60C
ACs
1=B
2=E
3=C
SOT23
BCW60D
ADs
1=B
2=E
3=C
SOT23
BCW60FF
AFs
1=B
2=E
3=C
SOT23
BCX70G
AGs
1=B
2=E
3=C
SOT23
BCX70H
AHs
1=B
2=E
3=C
SOT23
BCX70J
AJs
1=B
2=E
3=C
SOT23
BCX70K
AKs
1=B
2=E
3=C
SOT23
1
Package
2011-08-16
BCW60, BCX70
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
Value
V
BCW60, ...60FF
32
BCX70
45
Collector-base voltage
Unit
VCBO
BCW60, ...60FF
32
BCX70
45
6
Emitter-base voltage
VEBO
Collector current
IC
100
Peak collector current, tp ≤ 10 ms
ICM
200
Peak base current
IBM
200
Total power dissipation
Ptot
330
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
Thermal Resistance
Parameter
Symbol
Value
RthJS
≤ 240
mA
TS ≤ 71 °C
Junction - soldering
point1)
-65 ... 150
Unit
K/W
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2
2011-08-16
BCW60, BCX70
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10 mA, IB = 0 , BCW60, ...60FF
32
-
-
IC = 10 mA, IB = 0 , BCX70
45
-
-
IC = 10 µA, IE = 0 , BCW60, ...60FF
32
-
-
IC = 10 µA, IE = 0 , BCX70
45
-
-
6
-
-
Collector-base breakdown voltage
Unit
V
V(BR)CBO
Emitter-base breakdown voltage
V(BR)EBO
IE = 1 µA, IC = 0
Collector-base cutoff current
µA
ICBO
VCB = 32 V, IE = 0 , BCW60, ...60FF
-
-
0.02
VCB = 45 V, IE = 0 , BCX70
-
-
0.02
VCB = 32 V, IE = 0 , TA = 150 °C, BCW60, ...60FF
-
-
20
VCB = 45 V, IE = 0 , TA = 150 °C, BCX70
-
-
20
-
-
20
Emitter-base cutoff current
IEBO
nA
VEB = 4 V, IC = 0
DC current gain-
-
hFE
IC = 10 µA, VCE = 5 V, hFE-grp. G
20
140
-
IC = 10 µA, VCE = 5 V, hFE-grp. B/ H
20
200
-
IC = 10 µA, VCE = 5 V, hFE-grp. C/ J/ FF
40
300
-
IC = 10 µA, VCE = 5 V, hFE-grp. D/ K
100
460
-
IC = 2 mA, VCE = 5 V, hFE-grp. G
120
170
220
IC = 2 mA, VCE = 5 V, hFE-grp. B/ H
180
250
310
IC = 2 mA, VCE = 5 V, hFE-grp. C/ J/ FF
250
350
460
IC = 2 mA, VCE = 5 V, hFE-grp. D/ K
380
500
630
IC = 50 mA, VCE = 1 V, hFE-grp. G
50
-
-
IC = 50 mA, VCE = 1 V, hFE-grp. B/ H
70
-
-
IC = 50 mA, VCE = 1 V, hFE-grp. C/ J/ FF
90
-
-
IC = 50 mA, VCE = 1 V, hFE-grp. D/ K
100
-
-
3
2011-08-16
BCW60, BCX70
DC Electrical Characteristics
Parameter
Symbol
Values
min.
typ.
Unit
max.
Characteristics
Collector-emitter saturation voltage1)
V
VCEsat
IC = 10 mA, IB = 0.25 mA
-
0.12
0.25
IC = 50 mA, IB = 1.25 mA
-
0.2
0.55
IC = 10 mA, IB = 0.25 mA
-
0.7
0.85
IC = 50 mA, IB = 1.25 mA
-
0.83
1.05
IC = 10 µA, VCE = 5 V
-
0.52
-
IC = 2 mA, VCE = 5 V
0.58
0.65
0.7
IC = 50 mA, VCE = 1 V
-
0.78
-
Base emitter saturation voltage1)
VBEsat
Base-emitter voltage1)
1Pulse
VBE(ON)
test: t < 300µs; D < 2%
4
2011-08-16
BCW60, BCX70
AC Characteristics
Transition frequency
fT
-
250
-
MHz
Ccb
-
0.95
-
pF
Ceb
-
9
-
IC = 20 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance
kΩ
h11e
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. G
-
2.7
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/ H
-
3.6
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/ J /FF
-
4.5
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/ K
-
7.5
-
Open-circuit reverse voltage transf. ratio
10 -4
h12e
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. G
-
1.5
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B /H
-
2
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/ J/ FF
-
2
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/ K
-
3
-
Short-circuit forward current transf. ratio
-
h21e
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. G
-
200
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/ H
-
260
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/ J/ FF
-
330
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/ K
-
520
-
Open-circuit output admittance
µS
h22e
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. G
-
18
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/ H
-
24
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/ J/ FF
-
30
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/ K
-
50
-
Noise figure
dB
F
IC = 200 µA, VCE = 5 V, f = 1 kHz,
∆ f = 200 Hz, RS = 2 kΩ, hFE-grp. B - K
-
2
-
-
1
2
-
-
IC = 200 µA, VCE = 5 V, f = 1 kHz,
∆ f = 200 Hz, RS = 2 kΩ, hFE-grp. FF
Equivalent noise voltage
Vn
0.135 µV
IC = 200 µA, VCE = 5 V, RS = 2 kΩ,
f = 10...50 Hz , h FE-grp. FF
5
2011-08-16
BCW60, BCX70
DC current gain hFE = ƒ(IC)
VCE = 5 V
10 3
h FE
Collector-emitter saturation voltage
IC = ƒ(VCEsat ), hFE = 10
BCW 60/BCX 70
5
EHP00334
10 2
ΙC
100 ˚C
BCW 60/BCX 70
EHP00332
mA
100 ˚C
25 ˚C
-50 ˚C
25 ˚C
-50 ˚C
10 2
10 1
5
5
10 1
10 0
5
5
10 0
10 -2
10 -1
10 0
10 1
10 -1
0
mA 10 2
0.1
0.2
0.3
ΙC
Collector current IC = ƒ(VBE )
IC = ƒ(VBEsat), hFE = 40
VCE = 5V
ΙC
BCW 60/BCX 70
EHP00331
mA
10 2
ΙC
100 ˚C
25 ˚C
-50 ˚C
10 1
V
0.5
V CEsat
Base-emitter saturation voltage
10 2
0.4
BCW 60/BCX 70
EHP00333
mA
10 1
5
5
10 0
5
10 0
100 ˚C
10 -1
5
25 ˚C
-50 ˚C
5
10 -1
0
0.2
0.4
0.6
0.8
V
10 -2
1.2
V BE sat
0
0.5
V
1.0
V BE
6
2011-08-16
BCW60, BCX70
Collector cutoff current ICBO = ƒ(TA)
VCB = VCEmax
BCW 60/BCX 70
10 4
nA
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
EHP00335
10 3
BCW 60/BCX 70
EHP00330
MHz
Ι CBO
fT
10 3
max
10 2
10 2
10 1
5
typ
10 0
10 -1
0
50
100
10 1
10 -1
150
˚C
10 0
10 1
mA
10 2
ΙC
TA
Collector-base capacitance Ccb = ƒ(VCB)
Total power dissipation P tot = ƒ(TS)
Emitter-base capacitance Ceb = ƒ(VEB)
12
360
mW
10
300
9
270
8
240
Ptot
CCB(CEB )
pF
7
6
210
180
5
150
CEB
4
120
3
90
2
60
1
0
0
30
CCB
4
8
12
16
V
0
0
22
VCB(VEB
7
15
30
45
60
75
90 105 120
°C 150
TS
2011-08-16
BCW60, BCX70
h parameter he = ƒ(IC) normalized
VCE = 5V
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp )
10 3
BCW 60/BCX 70
EHP00328
Ptot max
5
Ptot DC
D=
tp
T
10 2
tp
he
BCW 60/BCX 70
EHP00336
5
T
h 11e
10
2
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10 1
10
VCE = 5 V
1
5
h 12e
10 0 h
21e
5
5
h 22e
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
s
10 -1
10 -1
10 0
5
10 0
ΙC
tp
h parameter he = ƒ(VCE ) normalized
IC = 2mA
2.0
BCW 60/BCX 70
Noise figure F = ƒ(VCE)
IC = 0.2mA, RS = 2kΩ , f = 1kHz
EHP00337
Ι C = 2 mA
he
10 1
mA
20
F
BCW 60/BCX 70
EHP00338
dB
1.5
h 21e
h 11e
15
1.0
h 12e
10
h 22e
0.5
0
5
0
10
20
V
0
10 -1
30
VCE
10 0
10 1
V
10 2
VCE
8
2011-08-16
BCW60, BCX70
Noise figure F = ƒ(f)
Noise figure F = ƒ(IC )
VCE = 5V, f = 120Hz
VCE = 5V, ZS = ZSopt
20
F
BCW 60/BCX 70
EHP00339
dB
20
F
BCW 60/BCX 70
EHP00340
dB
15
15
10
10
RS = 1 MΩ
100 k Ω
10 k Ω
500 Ω
5
5
1 kΩ
0
10 -2
10 -1
10 0
10 1
0
10 -3
kHz 10 2
10 -2
10 -1
Noise figure F = ƒ(IC )
VCE = 5V, f = 1kHz
F
Noise figure F = ƒ(IC )
VCE = 5V, f = 10kHz
BCW 60/BCX 70
EHP00341
dB
20
F
15
R S = 1 MΩ
BCW 60/BCX 70
EHP00342
dB
RS = 1 M Ω
15
100 kΩ 10 kΩ
100 k Ω
10
10
10 k Ω
500 Ω
1 kΩ
5
5
1 kΩ
500 Ω
0
10 -3
mA 10 1
ΙC
f
20
10 0
10 -2
10 -1
0
10 -3
mA 10 1
10 0
ΙC
10 -2
10 -1
10 0 mA 10 1
ΙC
9
2011-08-16
Package SOT23
BCW60, BCX70
0.4 +0.1
-0.05
1)
2
0.08...0.1
C
0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9
0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
2005, June
Date code (YM)
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
8
2.13
2.65
0.9
Pin 1
1.15
3.15
10
2011-08-16
BCW60, BCX70
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office ().
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
11
2011-08-16