BFP640H6327

BFP640 Surface mount high linearity silicon NPN RF bipolar transistor Product description The BFP640 is a RF bipolar transistor based on SiGe:C technology that is part of Infineon’s established sixth generation transistor family. Its transition frequency fT of 42 GHz and high linearity characteristics at low currents make this device particularly suitable for energy efficiency designs at frequency as high as 8 GHz. It remains cost competitive without compromising on ease of use. Feature list • • • Minimum noise figure NFmin = 0.65 dB at 1.9 GHz, 3 V, 6 mA High gain Gma = 24 dB at 1.9 GHz, 3 V, 25 mA OIP3 = 26.5 dBm at 1.9 GHz, 3 V, 25 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • • • Low noise amplifiers (LNAs) in GNSS receivers LNAs in satellite radio (SDARs, DAB) receivers LNAs in multimedia applications such as CATV and FM radio Device information Table 1 Part information Product name / Ordering code Package Pin configuration BFP640 / BFP640H6327XTSA1 SOT343 1=B 2=E 3=C 4=E Marking Pieces / Reel R4s 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 3.0 2019-01-25 BFP640 Surface mount high linearity silicon NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 3.4 3.5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4 Package information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Datasheet 2 Revision 3.0 2019-01-25 BFP640 Surface mount high linearity silicon NPN RF bipolar transistor Absolute maximum ratings 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. Collector emitter voltage VCEO – Unit Note or test condition V Open base Max. 4.1 3.6 TA = -55 °C, open base Collector emitter voltage VCES 13 E-B short circuited Collector base voltage VCBO 13 Open emitter Emitter base voltage VEBO 1.2 Open collector Base current IB 3 Collector current IC 50 Total power dissipation 1) Ptot Junction temperature TJ Storage temperature TStg mA – 200 mW TS ≤ 90 °C 150 °C – -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 Revision 3.0 2019-01-25 BFP640 Surface mount high linearity silicon NPN RF bipolar transistor Thermal characteristics 2 Thermal characteristics Table 3 Thermal resistance Parameter Symbol Junction - soldering point RthJS Values Min. Typ. Max. – 300 – Unit Note or test condition K/W – 240 200 120 P tot [mW] 160 80 40 0 Figure 1 Datasheet 0 25 50 75 TS [°C] 100 125 150 Total power dissipation Ptot = f(TS) 4 Revision 3.0 2019-01-25 BFP640 Surface mount high linearity silicon NPN RF bipolar transistor Electrical characteristics 3 Electrical characteristics 3.1 DC characteristics Table 4 DC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note or test condition V IC = 1 mA, IB = 0, open base Collector emitter breakdown voltage V(BR)CEO 4.1 4.7 – Collector emitter leakage current ICES – 1 400 2) nA VCE = 13 V, VBE = 0, E-B short circuited 1 40 2) VCE = 5 V, VBE = 0, E-B short circuited Collector base leakage current ICBO 1 40 2) VCB = 5 V, IE = 0, open emitter Emitter base leakage current IEBO 1 40 2) VEB = 0.5 V, IC = 0, open collector DC current gain hFE 180 270 VCE = 3 V, IC = 30 mA, pulse measured 110 3.2 General AC characteristics Table 5 General AC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. – 42 – Unit Note or test condition GHz VCE = 3 V, IC = 30 mA, f = 2 GHz pF VCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded Transition frequency fT Collector base capacitance CCB 0.08 Collector emitter capacitance CCE 0.24 VCE = 3 V, VBE = 0, f = 1 MHz, base grounded Emitter base capacitance CEB 0.51 VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded 2 Maximum values not limited by the device but by the short cycle time of the 100% test. Datasheet 5 Revision 3.0 2019-01-25 BFP640 Surface mount high linearity silicon NPN RF bipolar transistor Electrical characteristics 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C. VC Top View Bias-T OUT C E VB B Bias-T E (Pin 1) IN Figure 2 Testing circuit Table 6 AC characteristics, VCE = 3 V, f = 450 MHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass – – dB IC = 25 mA IC = 6 mA dBm 23.5 10.5 IC = 25 mA, ZS = ZL = 50 Ω AC characteristics, VCE = 3 V, f = 900 MHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass – Typ. 29 27.5 Unit 25.5 12 6 Note or test condition Max. – dB 0.6 24 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Datasheet 33 31.5 Note or test condition Max. 0.55 26 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Table 7 Typ. Unit IC = 25 mA IC = 6 mA dBm IC = 25 mA, ZS = ZL = 50 Ω Revision 3.0 2019-01-25 BFP640 Surface mount high linearity silicon NPN RF bipolar transistor Electrical characteristics Table 8 AC characteristics, VCE = 3 V, f = 1.5 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass – 25.5 23.5 dB IC = 25 mA IC = 6 mA dBm 25.5 11.5 Symbol Values Min. – Typ. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.65 19.5 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB 26.5 12.5 IC = 25 mA, ZS = ZL = 50 Ω 24 21.5 Unit Note or test condition Max. – dB IC = 25 mA IC = 6 mA dBm IC = 25 mA, ZS = ZL = 50 Ω AC characteristics, VCE = 3 V, f = 2.4 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass – Typ. 22 19.5 Unit 27.5 12 7 Note or test condition Max. – dB 0.7 18 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Datasheet – AC characteristics, VCE = 3 V, f = 1.9 GHz Parameter Table 10 Note or test condition Max. 0.6 21 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Table 9 Typ. Unit IC = 25 mA IC = 6 mA dBm IC = 25 mA, ZS = ZL = 50 Ω Revision 3.0 2019-01-25 BFP640 Surface mount high linearity silicon NPN RF bipolar transistor Electrical characteristics Table 11 AC characteristics, VCE = 3 V, f = 3.5 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gma |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.85 15 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB 27.5 12 Table 12 – Typ. Symbol Max. – dB IC = 25 mA IC = 6 mA dBm Values Min. Power gain • Maximum power gain • Transducer gain Gma |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass – Typ. 14 12.5 Unit IC = 25 mA, ZS = ZL = 50 Ω 27.5 12.5 Note or test condition Max. – dB 1.1 12 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Datasheet Note or test condition AC characteristics, VCE = 3 V, f = 5.5 GHz Parameter Note: 18 16.5 Unit IC = 25 mA IC = 6 mA dBm IC = 25 mA, ZS = ZL = 50 Ω Gms = IS21 / S12I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. 8 Revision 3.0 2019-01-25 BFP640 Surface mount high linearity silicon NPN RF bipolar transistor Electrical characteristics 3.4 Characteristic DC diagrams 30 160µA 140µA 25 120µA 100µA IC [mA] 20 80µA 15 60µA 40µA 10 20µA 5 0 0 Figure 3 0.5 1 1.5 2 2.5 3 VCE [V] 3.5 4 4.5 5 Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter 3 hFE 10 2 10 0 10 1 10 I [mA] 2 10 c Figure 4 DC current gain hFE = f(IC), VCE = 3 V Datasheet 9 Revision 3.0 2019-01-25 BFP640 Surface mount high linearity silicon NPN RF bipolar transistor 10 2 10 1 10 0 10 −1 10 −2 10 −3 C I [mA] Electrical characteristics 10 −4 0.5 0.55 0.6 0.65 V 0.7 0.75 [V] 0.8 0.85 0.9 BE Figure 5 Collector current vs. base emitter forward voltage IC = f(VBE), VCE = 2 V 10 0 10 −1 B I [mA] 10 10 10 10 10 10 −2 −3 −4 −5 −6 −7 0.5 0.55 0.6 0.65 V Figure 6 Datasheet 0.7 0.75 [V] 0.8 0.85 0.9 BE Base current vs. base emitter forward voltage IB = f(VBE), VCE = 2 V 10 Revision 3.0 2019-01-25 BFP640 Surface mount high linearity silicon NPN RF bipolar transistor Electrical characteristics −9 10 −10 B I [A] 10 −11 10 −12 10 −13 10 0.6 0.7 0.8 V 0.9 [V] 1 1.1 1.2 EB Figure 7 Datasheet Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 2 V 11 Revision 3.0 2019-01-25 BFP640 Surface mount high linearity silicon NPN RF bipolar transistor Electrical characteristics 3.5 Characteristic AC diagrams 45 40 4.00V 3.50V 35 3.00V T f [GHz] 30 25 2.50V 20 15 2.00V 10 5 0 1.00V 0 10 20 30 I [mA] 40 50 60 C Figure 8 Transition frequency fT = f(IC), f = 2 GHz, VCE = parameter 30 25 3 OIP [dBm] 20 15 10 2V, 1500MHz 3V, 1500MHz 2V, 2400MHz 3V, 2400MHz 5 0 0 5 10 15 20 I [mA] 25 30 35 40 C Figure 9 3rd order intercept point OIP3 = f(IC), ZS = ZL= 50 Ω, VCE, f = parameters Datasheet 12 Revision 3.0 2019-01-25 BFP640 Surface mount high linearity silicon NPN RF bipolar transistor Electrical characteristics 28 27 26 25 8 109 1 121 1 143 15 17 18 20 19 21 22 2 24 3 30 C I [mA] 28 27 26 25 20 15 17 16 18 20 19 21 22 23 24 25 15 16 1 23 22 5 21 20 19 18 17 10 20 21 19 18 2 1.5 25 24 V 19 2.5 [V] 25 24 23 22 27 26 3 22 23 20 21 19 3.5 4 CE 11 10 9 8 6 7 13 12 5 30 0 1 3rd order intercept point at output OIP3 [dBm] = f(IC , VCE), ZS = ZL = 50 Ω, f = 2.4 GHz −2 Figure 10 25 12 7 8 6 5 IC [mA] 9 20 4 2 3 11 10 9 15 10 4 3 2 1 0 −1 5 1 Datasheet 9 8 5 Figure 11 11 10 1.5 8 7 6 7 6 4 3 2 1 0 −1 2 5 2.5 VCE [V] 6 4 3 2 1 0 −1 3 5 3 2 3.5 4 Compression point at output OP1dB [dBm] = f(IC, VCE), ZS = ZL = 50 Ω, f = 2.4 GHz 13 Revision 3.0 2019-01-25 BFP640 Surface mount high linearity silicon NPN RF bipolar transistor Electrical characteristics 0.2 CCB [pF] 0.16 0.12 0.08 0.04 0 0 0.5 1 1.5 2 V CB Figure 12 2.5 3 3.5 4 [V] Collector base capacitance CCB = f(VCB), f = 1 MHz 40 35 30 G ms G [dB] 25 20 Gma 15 |S21| 10 2 5 0 Figure 13 Datasheet 0 1 2 3 4 5 6 f [GHz] 7 8 9 10 Gain Gma, Gms, IS21I2 = f(f), VCE = 3 V, IC = 25 mA 14 Revision 3.0 2019-01-25 BFP640 Surface mount high linearity silicon NPN RF bipolar transistor Electrical characteristics 45 40 0.15GHz 35 0.45GHz G max [dB] 30 0.90GHz 1.50GHz 1.90GHz 2.40GHz 25 20 3.50GHz 15 5.50GHz 10 10.00GHz 5 0 0 10 20 30 I [mA] 40 50 60 C Figure 14 Maximum power gain Gmax = f(IC), VCE = 3 V, f = parameter in GHz 40 0.15GHz 35 0.45GHz 30 0.90GHz 1.50GHz 1.90GHz 2.40GHz 20 3.50GHz G max [dB] 25 15 5.50GHz 10 10.00GHz 5 0 0 0.5 1 1.5 2 V Figure 15 Datasheet 2.5 3 [V] 3.5 4 4.5 5 CE Maximum power gain Gmax = f(VCE), IC = 25 mA, f = parameter in GHz 15 Revision 3.0 2019-01-25 BFP640 Surface mount high linearity silicon NPN RF bipolar transistor Electrical characteristics 1 1.5 0.5 2 0.4 10.0 9.0 8.0 0.3 7.0 8.0 6.0 6.0 0.2 5.0 4 7.0 5 5.0 0.03 to 10 GHz 4.0 0.1 4.0 0.1 0 3 10.0 9.0 10 3.0 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5 2.0 0.03 0.03 3.0 −0.1 −10 1.0 −0.2 −5 2.0 −4 −0.3 −3 1.0 −0.4 −0.5 −2 −1.5 6.0mA −1 25mA Figure 16 Input reflection coefficient S11 = f(f), VCE = 3 V, IC = 6 / 25 mA 1 1.5 2 0.5 0.4 3 0.3 4 0.45 to 10 GHz 0.2 0.1 3.5 2.4 1.9 1.5 4.5 0.1 0 1 0.2 0.3 0.4 0.5 5.5 −0.1 7.0 −0.2 0.5 0.9 1.5 1.9 2.4 3.5 4.5 5.5 7.0 8.0 9.0 −0.3 1.5 2 5 10 0.9 0.45 3 4 5 −10 8.0 9.0 −5 10.0 −4 10.0 −3 −0.4 −2 −0.5 −1.5 −1 Figure 17 Datasheet 6mA 25mA Source impedance for minimum noise figure ZS,opt = f(f), VCE = 3 V, IC = 6 / 25 mA 16 Revision 3.0 2019-01-25 BFP640 Surface mount high linearity silicon NPN RF bipolar transistor Electrical characteristics 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 10.0 0.03 to 10 GHz 10.0 0.1 0.1 0.2 0.3 0.4 0.5 8.0 1 7.0 6.0 7.0 6.01.5 5.0 4.0 3.0 5.0 −0.1 10 8.0 9.0 0 9.0 3 4 5 0.03 2.0 4.0 3.0 −0.2 2 0.03 −10 1.0 −5 2.0 −4 1.0 −0.3 −3 −0.4 −0.5 −2 −1.5 −1 6.0mA 25mA Figure 18 Output reflection coefficient S22 = f(f), VCE = 3 V, IC = 6 / 25 mA 2 1.8 1.6 1.4 NF min [dB] 1.2 1 0.8 I = 25mA C 0.6 I = 6.0mA C 0.4 0.2 0 Figure 19 Datasheet 0 1 2 3 4 5 6 f [GHz] 7 8 9 10 Noise figure NFmin = f(f), ZS = ZS,opt, VCE = 3 V, IC = 6 / 25 mA 17 Revision 3.0 2019-01-25 BFP640 Surface mount high linearity silicon NPN RF bipolar transistor Electrical characteristics 3 f = 10GHz f = 5.5GHz 2.5 f = 3.5GHz f = 2.4GHz NFmin [dB] 2 1.5 1 f = 1.9GHz f = 1.5GHz 0.5 f = 0.9GHz f = 0.45GHz 0 0 5 10 15 20 25 I [mA] 30 35 40 45 C Figure 20 Noise figure NFmin = f(IC), ZS = ZS,opt, VCE = 3 V, f = parameter in GHz 3.5 3 f = 10GHz f = 5.5GHz NF50 [dB] 2.5 f = 3.5GHz f = 2.4GHz 2 1.5 1 f = 1.9GHz f = 1.5GHz 0.5 0 Figure 21 Note: Datasheet f = 0.9GHz f = 0.45GHz 0 5 10 15 20 25 30 35 40 45 Noise figure NF50 = f(IC), ZS = 50 Ω, VCE = 3 V, f = parameter in GHz The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. 18 Revision 3.0 2019-01-25 BFP640 Surface mount high linearity silicon NPN RF bipolar transistor Package information SOT343 0.9 ±0.1 Package information SOT343 1.25 ±0.1 0.15 -0.05 +0.10 A 0.1 0.1 MIN. 0.1 2.1 ±0.1 A 2 1 3x +0.10 0.3 -0.05 0.6 -0.05 +0.10 1.3 2 ±0.2 0.1 3 4 0.15 0.2 0.1 MAX. 4 MOLD FLAS H, P ROTRUS ION OR GATE BURRS OF 0.2 MM MAXIMUM P ER S IDE ARE NOT INCLUDED ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ ] Figure 22 Package outline Figure 23 Foot print TYP E CODE NOTE OF MANUFACTURER MONTH YEAR Figure 24 Marking layout example 4 0.2 2.3 8 2 P IN 1 INDEX MARKING 2.15 ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ Figure 25 Datasheet 1.1 ] Tape dimensions 19 Revision 3.0 2019-01-25 BFP640 Surface mount high linearity silicon NPN RF bipolar transistor Revision history Revision history Document version Date of release Description of changes Revision 3.0 2019-01-25 New datasheet layout. Datasheet 20 Revision 3.0 2019-01-25 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2019-01-25 Published by Infineon Technologies AG 81726 Munich, Germany © 2019 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-igo1526291229354 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury