BFP640ESDH6327XTSA1

BFP640ESD Surface mount robust silicon NPN RF bipolar transistor Product description The BFP640ESD is a RF bipolar transistor based on SiGe:C technology that is part of Infineon’s established sixth generation transistor family. Its ESD structure, high RF gain and low noise figure characteristics make the device suitable for a wide range of wireless applications. It remains cost competitive without compromising on ease of use. Feature list • • • • Minimum noise figure NFmin = 0.8 dB at 3.5 GHz, 3 V, 6 mA High gain Gma = 19 dB at 3.5 GHz, 3 V, 30 mA OIP3 = 26.5 dBm at 3.5 GHz, 3 V, 30 mA High ESD robustness, typical 2 kV (HBM) Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • • • Low noise amplifiers (LNAs) in GNSS receivers LNAs in satellite radio (SDARs, DAB) receivers LNAs in multimedia applications such as CATV and FM radio Device information Table 1 Part information Product name / Ordering code Package Pin configuration BFP640ESD / BFP640ESDH6327XTSA1 SOT343 1=B 2=E 3=C 4=E Marking Pieces / Reel T4s 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 2.0 2019-01-25 BFP640ESD Surface mount robust silicon NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 3.4 3.5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4 Package information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Datasheet 2 Revision 2.0 2019-01-25 BFP640ESD Surface mount robust silicon NPN RF bipolar transistor Absolute maximum ratings 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. Collector emitter voltage Collector emitter voltage 1) Collector base voltage 2) VCEO – VCES VCBO Unit Note or test condition V Open base Max. 4.1 3.6 TA = -55 °C, open base 4.1 E-B short circuited 3.6 TA = -55 °C, E-B short circuited 4.8 Open emitter 4.3 TA = -55 °C, open emitter Base current IB -10 6 Collector current IC – 50 RF input power PRFin ESD stress pulse VESD Total power dissipation 3) Ptot Junction temperature TJ Storage temperature TStg mA – 21 dBm -2 2 kV HBM, all pins, acc. to JESD22-A114 – 200 mW TS ≤ 88 °C 150 °C – -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 2 3 VCES is similar to VCEO due to design. VCBO is similar to VCEO due to design. TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 Revision 2.0 2019-01-25 BFP640ESD Surface mount robust silicon NPN RF bipolar transistor Thermal characteristics 2 Thermal characteristics Table 3 Thermal resistance Parameter Symbol Junction - soldering point RthJS Values Min. Typ. Max. – 310 – Unit Note or test condition K/W – 250 Ptot [mW] 200 150 100 50 0 0 25 50 75 T [°C] 100 125 150 S Figure 1 Datasheet Total power dissipation Ptot = f(TS) 4 Revision 2.0 2019-01-25 BFP640ESD Surface mount robust silicon NPN RF bipolar transistor Electrical characteristics 3 Electrical characteristics 3.1 DC characteristics Table 4 DC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note or test condition V IC = 1 mA, IB = 0, open base Collector emitter breakdown voltage V(BR)CEO 4.1 4.7 – Collector emitter leakage current ICES – – 500 4) nA VCE = 2 V, VBE = 0, E-B short circuited Collector base leakage current ICBO 500 4) VCB = 2 V, IE = 0, open emitter Emitter base leakage current IEBO 10 4) DC current gain hFE 110 3.2 General AC characteristics Table 5 General AC characteristics at TA = 25 °C Parameter Symbol 180 μA 270 Values Min. Typ. Max. – 45 – VEB = 0.5 V, IC = 0, open collector VCE = 3 V, IC = 30 mA, pulse measured Unit Note or test condition GHz VCE = 3 V, IC = 30 mA, f = 1 GHz pF VCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded Transition frequency fT Collector base capacitance CCB 0.08 Collector emitter capacitance CCE 0.4 VCE = 3 V, VBE = 0, f = 1 MHz, base grounded Emitter base capacitance CEB 0.7 VEB = 0.4 V, VCB = 0, f = 1 MHz, collector grounded 4 Maximum values not limited by the device but by the short cycle time of the 100% test. Datasheet 5 Revision 2.0 2019-01-25 BFP640ESD Surface mount robust silicon NPN RF bipolar transistor Electrical characteristics 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C. VC Top View Bias-T OUT E C B E VB Bias-T (Pin 1) IN Figure 2 Testing circuit Table 6 AC characteristics, VCE = 3 V, f = 150 MHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.6 30 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB 25 11 Table 7 – Typ. Note or test condition Max. – dB IC = 30 mA IC = 6 mA dBm IC = 30 mA, ZS = ZL = 50 Ω AC characteristics, VCE = 3 V, f = 450 MHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass – Typ. 34.5 32 Unit 25 11 6 Note or test condition Max. – dB 0.6 28.5 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Datasheet 39.5 35 Unit IC = 30 mA IC = 6 mA dBm IC = 30 mA, ZS = ZL = 50 Ω Revision 2.0 2019-01-25 BFP640ESD Surface mount robust silicon NPN RF bipolar transistor Electrical characteristics Table 8 AC characteristics, VCE = 3 V, f = 900 MHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass – 30.5 28 dB IC = 30 mA IC = 6 mA dBm 26 11.5 Symbol Values Min. – Typ. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.65 23.5 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB 26.5 12 IC = 30 mA, ZS = ZL = 50 Ω 26.5 24 Unit Note or test condition Max. – dB IC = 30 mA IC = 6 mA dBm IC = 30 mA, ZS = ZL = 50 Ω AC characteristics, VCE = 3 V, f = 1.9 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass – Typ. 25 22 Unit 27 12 7 Note or test condition Max. – dB 0.65 22 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Datasheet – AC characteristics, VCE = 3 V, f = 1.5 GHz Parameter Table 10 Note or test condition Max. 0.6 26 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Table 9 Typ. Unit IC = 30 mA IC = 6 mA dBm IC = 30 mA, ZS = ZL = 50 Ω Revision 2.0 2019-01-25 BFP640ESD Surface mount robust silicon NPN RF bipolar transistor Electrical characteristics Table 11 AC characteristics, VCE = 3 V, f = 2.4 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass – dB IC = 30 mA IC = 6 mA dBm 27 12.5 Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass – Typ. 19 17 Unit IC = 30 mA, ZS = ZL = 50 Ω Note or test condition Max. – dB 0.8 16 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB IC = 30 mA IC = 6 mA dBm 26.5 12.5 IC = 30 mA, ZS = ZL = 50 Ω AC characteristics, VCE = 3 V, f = 5.5 GHz Parameter Symbol Values Min. – Typ. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 1.05 11.5 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB 26 12.5 Datasheet – AC characteristics, VCE = 3 V, f = 3.5 GHz Parameter Table 13 23 20 Note or test condition Max. 0.7 20 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Table 12 Typ. Unit 8 14.5 12.5 Unit Note or test condition Max. – dB IC = 30 mA IC = 6 mA dBm IC = 30 mA, ZS = ZL = 50 Ω Revision 2.0 2019-01-25 BFP640ESD Surface mount robust silicon NPN RF bipolar transistor Electrical characteristics Table 14 AC characteristics, VCE = 3 V, f = 10 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass – Datasheet 10.5 6 25.5 11 Note or test condition Max. – dB 2 7 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Note: Typ. Unit IC = 30 mA IC = 6 mA dBm IC = 30 mA, ZS = ZL = 50 Ω Gms = IS21 / S12I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. 9 Revision 2.0 2019-01-25 BFP640ESD Surface mount robust silicon NPN RF bipolar transistor Electrical characteristics 3.4 Characteristic DC diagrams 60 50 IB=325µA IB=275µA IC [mA] 40 IB=225µA 30 IB=175µA IB=125µA 20 IB=75µA 10 IB=25µA 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VCE[V] Figure 3 Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter hFE 1000 100 0.1 1 10 100 IC [mA] Figure 4 DC current gain hFE = f(IC), VCE = 3 V Datasheet 10 Revision 2.0 2019-01-25 BFP640ESD Surface mount robust silicon NPN RF bipolar transistor Electrical characteristics 100 10 IC [mA] 1 0.1 0.01 0.001 0.0001 0.00001 0.4 0.5 0.6 0.7 0.8 0.9 VBE [V] Figure 5 Collector current vs. base emitter forward voltage IC = f(VBE), VCE = 2 V 1 0.1 IB [mA] 0.01 0.001 0.0001 0.00001 0.000001 0.4 0.5 0.6 0.7 0.8 0.9 VBE [V] Figure 6 Datasheet Base current vs. base emitter forward voltage IB = f(VBE), VCE = 2 V 11 Revision 2.0 2019-01-25 BFP640ESD Surface mount robust silicon NPN RF bipolar transistor Electrical characteristics 1.E-04 1.E-05 IB[A] 1.E-06 1.E-07 1.E-08 1.E-09 1.E-10 0.2 0.3 0.4 0.5 0.6 VEB[V] Figure 7 Datasheet Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 2 V 12 Revision 2.0 2019-01-25 BFP640ESD Surface mount robust silicon NPN RF bipolar transistor Electrical characteristics 3.5 Characteristic AC diagrams 50 45 4.00V 3.00V 40 2.50V 30 25 T f [GHz] 35 20 2.00V 15 10 5 0 1.00V 0 10 20 30 I [mA] 40 50 60 C Figure 8 Transition frequency fT = f(IC), f = 1 GHz, VCE = parameter 30 25 OIP3 [dBm] 20 15 10 2V, 1.5GHz 3V, 1.5GHz 2V, 2.4GHz 3V, 2.4GHz 5 0 −5 0 10 20 30 40 50 I [mA] C Figure 9 Datasheet 3rd order intercept point OIP3 = f(IC), ZS = ZL = 50 Ω, VCE, f = parameters 13 Revision 2.0 2019-01-25 BFP640ESD Surface mount robust silicon NPN RF bipolar transistor Electrical characteristics 0.2 0.18 0.16 0.14 Ccb [pF] 0.12 0.1 0.08 0.06 0.04 0.02 0 0 0.5 1 1.5 2 V CB Figure 10 2.5 3 3.5 4 [V] Collector base capacitance CCB = f(VCB), f = 1 MHz 50 45 40 35 Gms G [dB] 30 25 Gma 20 G ms 15 |S |2 21 10 5 0 Figure 11 Datasheet 0 1 2 3 4 5 6 f [GHz] 7 8 9 10 Gain Gma, Gms, IS21I2 = f(f), VCE = 3 V, IC = 30 mA 14 Revision 2.0 2019-01-25 BFP640ESD Surface mount robust silicon NPN RF bipolar transistor Electrical characteristics 42 0.15GHz 39 36 0.45GHz G [dB] 33 30 0.90GHz 27 1.50GHz 1.90GHz 2.40GHz 24 21 18 3.50GHz 15 5.50GHz 12 10.00GHz 9 6 3 0 0 10 20 30 I [mA] 40 50 60 C Figure 12 Maximum power gain Gmax = f(IC), VCE = 3 V, f = parameter in GHz 42 0.15GHz 39 36 0.45GHz G [dB] 33 30 0.90GHz 27 1.50GHz 1.90GHz 2.40GHz 24 21 3.50GHz 18 15 5.50GHz 12 10.00GHz 9 6 3 0 0 1 2 3 V CE Figure 13 Datasheet 4 5 [V] Maximum power gain Gmax = f(VCE), IC = 30 mA, f = parameter in GHz 15 Revision 2.0 2019-01-25 BFP640ESD Surface mount robust silicon NPN RF bipolar transistor Electrical characteristics 1 1.5 0.5 9 8 0.3 10 4 7 6 6 5 5 5 0.1 4 4 0.2 0.3 0.4 0.5 0.1 3 9 8 7 0.2 0 2 10 0.4 10 0.03 to 10 GHz 3 1 1.5 2 3 4 5 2 3 −0.1 −10 1 −0.2 −5 −4 2 −0.3 −3 1 −0.4 −0.5 −2 −1.5 30 mA 6 mA −1 Figure 14 Input reflection coefficient S11 = f(f), VCE = 3 V, IC = 6 / 30 mA 1 1.5 0.5 2 0.4 1.9GHz 0.3 3 0.9GHz 4 0.2 5 2.4GHz 0.1 0.1 0 0.2 0.3 0.4 0.5 0.45GHz 1 1.5 2 3 4 5 Ic= 6.0mA Ic= 30mA −0.1 −10 5.5GHz −0.2 10 −5 −4 −0.3 −3 −0.4 10GHz −0.5 −2 −1.5 −1 Figure 15 Datasheet Source impedance for minimum noise figure ZS,opt = f(f), VCE = 3 V, IC = 6 / 30 mA 16 Revision 2.0 2019-01-25 BFP640ESD Surface mount robust silicon NPN RF bipolar transistor Electrical characteristics 1 1.5 2 0.5 0.4 3 0.3 10 0.2 5 9 9 0.1 4 10 0.1 0 7 1 6 5 0.2 0.3 0.4 0.5 7 6 −0.1 1.5 4 5 3 2 3 4 5 −10 2 1 4 −0.2 10 0.03 to 10 GHz 8 8 −5 −4 3 2 −0.3 1 −3 −0.4 −0.5 −2 −1.5 30 mA 6 mA −1 Figure 16 Output reflection coefficient S22 = f(f), VCE = 3 V, IC = 6 / 30 mA 2 1.8 1.6 NFmin [dB] 1.4 1.2 1 0.8 0.6 I = 30mA C I = 6.0mA 0.4 C 0.2 0 0 2 4 6 8 10 f [GHz] Figure 17 Datasheet Noise figure NFmin = f(f), ZS = ZS,opt, VCE = 3 V, IC = 6 / 30 mA 17 Revision 2.0 2019-01-25 BFP640ESD Surface mount robust silicon NPN RF bipolar transistor Electrical characteristics 4 3.5 NFmin [dB] 3 2.5 2 1.5 1 f = 10GHz f = 5.5GHz f = 2.4GHz f = 1.9GHz f = 0.9GHz f = 0.45GHz 0.5 0 0 10 20 30 40 50 Ic [mA] Figure 18 Noise figure NFmin = f(IC), ZS = ZS,opt, VCE = 3 V, f = parameter in GHz 5 4.5 4 NF50 [dB] 3.5 3 2.5 2 1.5 f = 10GHz f = 5.5GHz f = 2.4GHz f = 1.9GHz f = 0.9GHz f = 0.45GHz 1 0.5 0 0 10 20 30 40 50 Ic [mA] Figure 19 Note: Datasheet Noise figure NF50 = f(IC), ZS = 50 Ω, VCE = 3 V, f = parameter in GHz The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. 18 Revision 2.0 2019-01-25 BFP640ESD Surface mount robust silicon NPN RF bipolar transistor Package information SOT343 0.9 ±0.1 Package information SOT343 1.25 ±0.1 0.15 -0.05 +0.10 A 0.1 0.1 MIN. 0.1 2.1 ±0.1 A 2 1 3x +0.10 0.3 -0.05 0.6 -0.05 +0.10 1.3 2 ±0.2 0.1 3 4 0.15 0.2 0.1 MAX. 4 MOLD FLAS H, P ROTRUS ION OR GATE BURRS OF 0.2 MM MAXIMUM P ER S IDE ARE NOT INCLUDED ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ ] Figure 20 Package outline Figure 21 Foot print TYP E CODE NOTE OF MANUFACTURER MONTH YEAR Figure 22 Marking layout example 4 0.2 2.3 8 2 P IN 1 INDEX MARKING 2.15 ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ Figure 23 Datasheet 1.1 ] Tape dimensions 19 Revision 2.0 2019-01-25 BFP640ESD Surface mount robust silicon NPN RF bipolar transistor Revision history Revision history Document version Date of release Description of changes Revision 2.0 2019-01-25 New datasheet layout. Datasheet 20 Revision 2.0 2019-01-25 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2019-01-25 Published by Infineon Technologies AG 81726 Munich, Germany © 2019 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-gxy1526293410079 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 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