BFP540ESDH6327XTSA1

BFP540ESD Surface mount robust silicon NPN RF bipolar transistor Product description The BFP540ESD is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fifth generation RF bipolar transistor family. Its ESD structure provides high robustness. It remains cost competitive without compromising on ease of use. Feature list • • • • Minimum noise figure NFmin = 0.9 dB at 1.8 GHz, 2 V, 5 mA High gain Gms = 21.5 dB at 1.8 GHz, 2 V, 20 mA OIP3 = 24.5 dBm at 1.8 GHz, 2 V, 20 mA High ESD robustness, typical 1 kV (HBM) Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • • • Radio-frequency oscillators such as local oscillator in LNB Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio LNAs for wireless communications such as cordless phones Device information Table 1 Part information Product name / Ordering code Package Pin configuration BFP540ESD / BFP540ESDH6327XTSA1 SOT343 1=B 2=E 3=C 4=E Marking Pieces / Reel AUs 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 2.0 2019-01-25 BFP540ESD Surface mount robust silicon NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 3.4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Datasheet 2 Revision 2.0 2019-01-25 BFP540ESD Surface mount robust silicon NPN RF bipolar transistor Absolute maximum ratings 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. Collector emitter voltage VCEO – Unit Note or test condition V Open base Max. 4.5 4 TA = -55 °C, open base Collector emitter voltage VCES 10 E-B short circuited Collector base voltage VCBO 10 Open emitter Emitter base voltage VEBO 1 Open collector Base current IB 8 Collector current IC 80 Total power dissipation 1) Ptot Junction temperature TJ Ambient temperature TA Storage temperature TStg mA – 250 mW TS ≤ 77 °C 150 °C – -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 Revision 2.0 2019-01-25 BFP540ESD Surface mount robust silicon NPN RF bipolar transistor Thermal characteristics 2 Thermal characteristics Table 3 Thermal resistance Parameter Symbol Junction - soldering point RthJS Values Min. Typ. Max. – 290 – Unit Note or test condition K/W – 300 250 P tot [mW] 200 150 100 50 0 0 25 50 75 100 125 150 T [°C] S Figure 1 Datasheet Total power dissipation Ptot = f(TS) 4 Revision 2.0 2019-01-25 BFP540ESD Surface mount robust silicon NPN RF bipolar transistor Thermal characteristics RthJS 10 3 K/W 10 2 10 110 -7 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp Figure 2 Permissible pulse load RthJS = f(tp) Ptotmax/ PtotDC 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 010 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp Figure 3 Datasheet Permissible pulse load Ptot,max / Ptot,DC = f(tp) 5 Revision 2.0 2019-01-25 BFP540ESD Surface mount robust silicon NPN RF bipolar transistor Electrical characteristics 3 Electrical characteristics 3.1 DC characteristics Table 4 DC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Collector emitter breakdown voltage V(BR)CEO 4.5 5 – V IC = 1 mA, IB = 0, open base Collector emitter leakage current ICES – – 10 2) μA VCE = 10 V, VBE = 0, E-B short circuited Collector base leakage current ICBO 100 2) nA VCB = 5 V, IE = 0, open emitter Emitter base leakage current IEBO 10 2) VEB = 0.5 V, IC = 0, open collector DC current gain hFE 50 3.2 General AC characteristics Table 5 General AC characteristics at TA = 25 °C Parameter Symbol 110 μA 170 Values Min. Typ. Max. VCE = 3.5 V, IC = 20 mA, pulse measured Unit Note or test condition Transition frequency fT 21 30 – GHz VCE = 4 V, IC = 50 mA, f = 1 GHz Collector base capacitance CCB – 0.14 0.24 pF VCB = 2 V, VBE = 0, f = 1 MHz, emitter grounded Collector emitter capacitance CCE 0.41 – Emitter base capacitance CEB 0.59 2 VCE = 2 V, VBE = 0, f = 1 MHz, base grounded VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded Maximum values not limited by the device but by the short cycle time of the 100% test. Datasheet 6 Revision 2.0 2019-01-25 BFP540ESD Surface mount robust silicon NPN RF bipolar transistor Electrical characteristics 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C. VC Top View Bias-T OUT E C B E VB Bias-T (Pin 1) IN Figure 4 Testing circuit Table 6 AC characteristics, VCE = 2 V, f = 1.8 GHz Parameter Symbol Values Min. Power gain • Maximum stable power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure NFmin – 16 – Linearity OIP3 • 3rd order intercept point at output OP • 1 dB gain compression point at output 1dB Table 7 0.9 24.5 11 Symbol Max. – dB 1.4 – Values Min. Power gain • Maximum available power gain • Transducer gain Gma |S21|2 Noise figure • Minimum noise figure NFmin Datasheet 21.5 18.5 Note or test condition IC = 20 mA IC = 5 mA dBm IC = 20 mA, ZS = ZL = 50 Ω AC characteristics, VCE = 2 V, f = 3 GHz Parameter Note: Typ. Unit – Typ. 16 14 1.3 Unit Note or test condition Max. – dB IC = 20 mA IC = 5 mA Gms = IS21 / S12I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz. 7 Revision 2.0 2019-01-25 BFP540ESD Surface mount robust silicon NPN RF bipolar transistor Electrical characteristics 3.4 Characteristic AC diagrams 30 25 20 15 T f [GHz] 3 - 4.5 V 2.00 V 10 1.00 V 0.75 V 5 0.50 V 0 0 10 20 30 40 50 60 70 80 90 100 I [mA] C Figure 5 Transition frequency fT = f(IC), f = 2 GHz, VCE = parameter 30 4.00 V 25 2.00 V 3.00 V 1.50 V 1.00 V 15 3 IP [dBm] 20 10 5 0 0 10 20 30 40 50 60 70 80 I [mA] C Figure 6 Datasheet 3rd order intercept point OIP3 = f(IC), ZS = ZL = 50 Ω, f = 900 MHz, VCE = parameter 8 Revision 2.0 2019-01-25 BFP540ESD Surface mount robust silicon NPN RF bipolar transistor Electrical characteristics 0.3 0.25 0.15 C cb [pF] 0.2 0.1 0.05 0 0 2 4 6 8 V CB Figure 7 10 12 14 [V] Collector base capacitance CCB = f(VCB), f = 1 MHz 45 40 35 30 G G [dB] ms 25 20 G ma 15 |S |2 21 10 5 0 1 2 3 4 5 6 f [GHz] Figure 8 Datasheet Gain Gma, Gms, IS21I2 = f(f), VCE = 3 V, IC = 25 mA 9 Revision 2.0 2019-01-25 BFP540ESD Surface mount robust silicon NPN RF bipolar transistor Electrical characteristics 28 26 24 0.90 GHz 22 G [dB] 20 18 1.80 GHz 16 2.40 GHz 14 3.00 GHz 12 10 4.00 GHz 8 5.00 GHz 6.00 GHz 6 0 10 20 30 40 50 60 70 80 90 100 I [mA] C Figure 9 Maximum power gain Gmax = f(IC), VCE = 3 V, f = parameter in GHz 28 0.90 GHz 26 24 22 1.80 GHz 20 G [dB] 2.40 GHz 18 3.00 GHz 16 14 4.00 GHz 12 5.00 GHz 10 6.00 GHz 8 6 0 1 2 3 V CE Figure 10 Datasheet 4 5 6 [V] Maximum power gain Gmax = f(VCE), IC = 20 mA, f = parameter in GHz 10 Revision 2.0 2019-01-25 BFP540ESD Surface mount robust silicon NPN RF bipolar transistor Electrical characteristics 1 1.5 2 0.5 0.4 3 0.3 4 0.2 5 0.1 2.4GHz 0.1 0 0.2 0.3 0.4 0.5 3GHz 10 1.8GHz 0.9GHz 1.5 2 1 3 Ic = 5.0mA 4GHz −0.1 5GHz −0.2 4 5 −10 I = 20mA c −0.3 −5 −4 −3 −0.4 6GHz −2 −0.5 −1.5 −1 Figure 11 Source impedance for minimum noise figure ZS,opt = f(f), VCE = 3 V, IC = 5 / 20 mA 2 1.8 1.6 F [dB] 1.4 1.2 1 IC = 20mA 0.8 I = 5.0mA C 0.6 0.4 0 1 2 3 4 5 6 7 f [GHz] Figure 12 Datasheet Noise figure NFmin = f(f), VCE = 3 V, ZS = ZS,opt, IC = 5 / 20 mA 11 Revision 2.0 2019-01-25 BFP540ESD Surface mount robust silicon NPN RF bipolar transistor Electrical characteristics 5 4.5 4 3.5 F [dB] 3 2.5 2 1.5 f = 6GHz f = 5GHz f = 4GHz f = 3GHz f = 1.8GHz 1 0.5 0 f = 0.9GHz 0 10 20 30 40 50 60 70 80 Ic [mA] Figure 13 Noise figure NFmin = f(IC), VCE = 3 V, ZS = ZS,opt, f = parameter in GHz 4.5 4 3.5 3 F [dB] 2.5 2 1.5 1 Z = 50Ω S Z =Z S 0.5 0 0 10 20 30 40 50 60 Sopt 70 80 I [mA] c Figure 14 Note: Datasheet Noise figure NF50 = f(IC), ZS = 50 Ω, NFmin = f(IC), ZS = ZS,opt, VCE = 3 V, f = 1.8 GHz The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. 12 Revision 2.0 2019-01-25 BFP540ESD Surface mount robust silicon NPN RF bipolar transistor Package information SOT343 0.9 ±0.1 Package information SOT343 1.25 ±0.1 0.15 -0.05 +0.10 A 0.1 0.1 MIN. 0.1 2.1 ±0.1 A 2 1 3x +0.10 0.3 -0.05 0.6 -0.05 +0.10 1.3 2 ±0.2 0.1 3 4 0.15 0.2 0.1 MAX. 4 MOLD FLAS H, P ROTRUS ION OR GATE BURRS OF 0.2 MM MAXIMUM P ER S IDE ARE NOT INCLUDED ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ ] Figure 15 Package outline Figure 16 Foot print TYP E CODE NOTE OF MANUFACTURER MONTH YEAR Figure 17 Marking layout example 4 0.2 2.3 8 2 P IN 1 INDEX MARKING 2.15 ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ Figure 18 Datasheet 1.1 ] Tape dimensions 13 Revision 2.0 2019-01-25 BFP540ESD Surface mount robust silicon NPN RF bipolar transistor Revision history Revision history Document version Date of release Description of changes Revision 2.0 2019-01-25 New datasheet layout. Datasheet 14 Revision 2.0 2019-01-25 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2019-01-25 Published by Infineon Technologies AG 81726 Munich, Germany © 2019 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-xhj1525440333512 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 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