BFS380L6E6327

BFS380L6 NPN Silicon RF Transistor 4 Preliminary data
High current capability and low figure for 3 5 wide dynamic range application 2 6
Low voltage operation 1
Ideal for low phase noise oscillators up to 3.5 GHz
Low noise figure: 1.1 dB at 1.8 GHz
Built in 2 transistors ( TR1, TR2: die as BFR380L3) 6 T R 1 5 T R 2 4 P-TSLP-6-1 1 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFS380L6 Marking Pin Configuration Package FC 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 6 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 80 Base current IB 14 Total power dissipation1) Ptot 380 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 V mA TS  96°C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS  140 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Jun-11-2003 BFS380L6 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 6 9 - V ICES - - 10 µA ICBO - - 100 nA IEBO - - 1 µA hFE 60 130 200 DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain- - IC = 40 mA, VCE = 3 V 2 Jun-11-2003 BFS380L6 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. - 14 - GHz Ccb - 0.5 - pF Cce - 0.2 - Ceb - 1.1 - AC Characteristics (verified by random sampling) Transition frequency fT I C = 40 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 5 V, f = 1 MHz, emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Noise figure dB Fmin I C = 8 mA, V CE = 3 V, ZS = Z Sopt, f = 1.8 GHz - 1.3 - I C = 8 mA, V CE = 3 V, ZS = Z Sopt, f = 3 GHz - 1.9 - - 12 - - 8 - Power gain, maximum available 1) Gma I C = 40 mA, VCE = 3 V, Z S = Z Sopt , Z L = ZLopt , f = 1.8 GHz I C = 40 mA, VCE = 3 V, Z S = Z Sopt , Z L = ZLopt , f = 3 GHz |S21e|2 Transducer gain dB I C = 40 mA, VCE = 3 V, Z S = Z L = 50 , f = 1.8 GHz - 10 - I C = 40 mA, VCE = 3 V, Z S = Z L = 50 , f = 3 GHz - 6.5 - IP3 - 27 - P-1dB - 11.5 - Third order intercept point at output 2) dBm VCE = 3 V, IC = 40 mA, f = 1.8 GHz, Z S = ZL = 50 1dB Compression point at output I C = 40 mA, VCE = 3 V, Z S = Z L = 50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e | (k-(k²-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50
from 0.1 MHz to 6 GHz 3 Jun-11-2003