BGSA11GN10E6327XTSA1

B G S A 11 G N 1 0 D u a l S i n g l e Po l e S i n g l e T h ro w A n te n n a Tu n i n g S w i tc h Features • Designed for high linearity and high RF voltage tuning applications • Multiple selectable switch configurations: Each throw directly and independently controlled • Low RON resistance of 1.0 Ω at each port in ON state, 0.5 Ω using both SPST in parallel • Low COFF capacitance of 250 fF at each port in OFF state • High bidirectional RF operating voltage of 36 V in OFF state • Low harmonic generation • 2 GPIO pins control interface • Supply voltage range: 1.65 to 3.6 V • No RF parameter change within supply voltage range • Small form factor 1.1 mm x 1.5 mm (MSL1, 260◦ C per JEDEC J-STD-020) • RoHS and WEEE compliant package 1.1 x 1.5 mm2 Potential Applications • • • • Impedance Tuning Antenna Tuning Inductance Tuning Tunable Filters Product Validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Block Diagram VDD RFC Voltage Regulator CTRL1 CTRL2 ESD Driver Driver Chargepump GND Data Sheet www.infineon.com RF1 RF2 Please read the Important Notice and Warnings at the end of this document Revision 3.2 2020-07-08 BGSA11GN10 Dual Single Pole Single Throw Antenna Tuning Switch Table of Contents Table of Contents 1 Features 2 2 Maximum Ratings 3 3 DC Characteristics 5 4 RF Small Signal Characteristics 7 5 RF large signal parameter 8 6 Logic Truth Table 9 7 Application Information 10 8 Application Examples 11 9 Package Information 14 Data Sheet 1 Revision 3.2 2020-07-08 BGSA11GN10 Dual Single Pole Single Throw Antenna Tuning Switch Features 1 Features • Designed for high linearity and high RF voltage tuning applications • Multiple selectable switch configurations: Each throw directly and independently controlled • Low RON resistance of 1.0 Ω at each port in ON state, 0.5 Ω using both SPST in parallel • Low COFF capacitance of 250 fF at each port in OFF state • High bidirectional RF operating voltage of 36 V in OFF state • Low harmonic generation • 2 GPIO pins control interface • Supply voltage range: 1.65 to 3.6 V • No RF parameter change within supply voltage range • Small form factor 1.1 mm x 1.5 mm (MSL1, 260◦ C per JEDEC J-STD-020) • RoHS and WEEE compliant package Description The BGSA11GN10 is a Dual Single Pole Single Throw (SPST) RF antenna aperture switch optimized for low COFF enabling applications up to 6.0 GHz. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. Unlike GaAs technology, the 0.1dB compression point exceeds the switch maximum input power level, resulting in linear performance at all signal levels and external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. Due to its very high RF voltage ruggedness it is suited for switching any reactive devices such as inductors and capacitors in RF matching circuits without significant losses in quality factors. Product Name Marking Package BGSA11GN10 11 TSNP-10-1 Data Sheet 2 Revision 3.2 2020-07-08 BGSA11GN10 Dual Single Pole Single Throw Antenna Tuning Switch Maximum Ratings 2 Maximum Ratings Table 1: Maximum Ratings, Table I at TA = 25 ◦C, unless otherwise specified Parameter Symbol Unit Note / Test Condition Min. Values Typ. Max. Frequency Range f 0.1 – – GHz 1) VDD -0.5 – 3.6 V Only for infrequent and short Storage temperature range TSTG -55 – 150 ◦ RF input power PRF _max – – 39 dBm Supply voltage 2) duration time periods C – Pulsed RF input power, duty cycle of 25 % with T_period= 4620 µs, ON-state, setup as of Fig. 1 RF voltage VRF _max – – 48 V Short term peaks (1µs, duty cycle 0.1%), Isolation mode, test setup acc. Fig. 2 / Fig. 3 and exceeding typical linearity, RON and COFF parameters 3) VESDCDM -1 – +1 kV ESD capability, HBM 4) VESDHBM -1 – +1 kV VESDANT -8 – +8 kV Junction temperature TJ – – 125 ◦ C – Thermal resistance junction - soldering point RthJS – – 45 K/W – Maximum DC-voltage on RF-Ports and RF- VRFDC 0 – 0 V No DC voltages allowed on RF- ESD capability, CDM ESD capability, system level (RF port) 5) RF vs system GND, with 27 nH shunt inductor Ground Ports Control Voltage Levels V Ctrlx -0.7 – V DD+0.7 (max. 3.6) Moisture Sensitivity Level MSL – 1 – V – – Switch has a low-pass response. For higher frequencies, losses have to be considered for their impact on thermal heating. The DC voltage at RF ports VRFDC has to be 0 V. 2) Note: Consider potential ripple voltages on top of V . Including RF ripple, V must not exceed the maximum ratings: V IO IO Ctrl = VDC + VRipple . 3) Field-Induced Charged-Device Model ANSI/ESDA/JEDEC JS-002. Simulates charging/discharging events that occur in production equipment and processes. Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing. 4) Human Body Model ANSI/ESDA/JEDEC JS-001 (R = 1,5 kΩ, C = 100 pF). 5) IEC 61000-4-2 (R = 330 Ω, C = 150 pF), contact discharge. 1) Warning: Stresses above the max. values listed here may cause permanent damage to the device. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Exposure to conditions at or below absolute maximum rating but above the specified maximum operation conditions may affect device reliability and life time. Functionality of the device might not be given under these conditions. Data Sheet 3 Revision 3.2 2020-07-08 BGSA11GN10 Dual Single Pole Single Throw Antenna Tuning Switch Maximum Ratings 50 Ohm 50 Ohm Transmission Line SIGNAL SOURCE VDD RFC Voltage Regulator CTRL1 CTRL2 ESD Driver Driver Chargepump GND RF1 RF2 Spectrum Analyser (Hx Monitor) R F1/RF2 ON MODE* Power Meter (tested series on, all others off) Figure 1: RF operating and Harmonics generation measurement configuration - RFx ON mode Spectrum Analyser 50 Ohm (Hx Monitor) 50 Ohm Transmission Line SIGNAL SOURCE Power Meter VDD Voltage Regulator CTRL1 CTRL2 Vrf RFC ESD ALL THROWS OPERATED IN ISO POSITION Grounded except of ON mode path Driver Driver Chargepump GND RF1 RF2 Figure 2: RF operating voltage measurement configuration - OFF mode at RFC Data Sheet 4 Revision 3.2 2020-07-08 BGSA11GN10 Dual Single Pole Single Throw Antenna Tuning Switch DC Characteristics Spectrum Analyser 50 Ohm (Hx Monitor) 50 Ohm Transmission Line SIGNAL SOURCE Power Meter RF1 VDD Voltage Regulator CTRL1 CTRL2 RF2 Vrf ESD RF THROW OPERATED IN ISO POSITION Driver Driver Chargepump RFC GND Figure 3: RF operating voltage measurement configuration - OFF mode at RFx 3 DC Characteristics Table 2: DC Characteristics at T A = −40 ◦C to 85 ◦C Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Supply voltage VDD 1.65 2.8 3.6 V – Supply current IDD – 80 150 µA – Control voltage low VCtrl,low 0 – 0.45 V – Control voltage high VCtrl,high 1.2 1.8 2.85 V VCtrl,high < VDD Control current low ICtrl,low -1 0 1 µA – Control current high ICtrl,high -1 0 1 µA VCtrl,high < VDD Ambient temperature TA -40 25 85 ◦ RF switching time tST 2 5 7 µs Startup time tPup – 20 30 µs Data Sheet 5 C – PIN = 0 dBm, Z0 = 50 Ω, TA = −40 ◦C... + 85 ◦C VDD = 1.65 − 3.6 V Refering Fig. 4 and Fig. 5 Revision 3.2 2020-07-08 BGSA11GN10 Dual Single Pole Single Throw Antenna Tuning Switch DC Characteristics VDD t Pup CTRL t ST 90% RF Signal Figure 4: Switching Time Definition VDD CTRL RF Signal Ac�ve Start-up Close-down Figure 5: Timing of Control and RF signals for valid operation Data Sheet 6 Revision 3.2 2020-07-08 BGSA11GN10 Dual Single Pole Single Throw Antenna Tuning Switch RF Small Signal Characteristics 4 RF Small Signal Characteristics Table 3: RF small signal specifications Parameter Symbol Unit Note / Test Condition Frequency range f 6.0 GHz – Switch ON resistance 1.0 1.5 Ω RFx to RFC Switch OFF capacitance 200 250 350 fF RFx to RFC 0.10 0.19 0.29 dB 0.24 0.34 0.43 dB 0.28 0.36 0.43 dB 0.29 0.5 0.69 dB VDD = 1.8 − 3.6 V , TA = −40 ◦C... + 85 ◦C, Z0 = 50 Ω, RF1 or RF2 switched to RFC 20 25 30 dB 16 18 20 dB 12 15 18 dB 824 - 915 MHz 16 17 19 dB 1710 - 1980 MHz 14 12 11 dB 13 11 11 dB 9 10 11 dB 824 - 915 MHz 21 22 24 dB 1710 - 1980 MHz 16 17 18 dB 15 16 17 dB 13 15 17 dB Insertion Loss Min. Values Typ. Max. 0.1 – RON 0.7 COFF (1,2,3) 824 - 960 MHz 1710 - 1980 MHz 1981 - 2169 MHz IL 2170 - 2690 MHz (1,2,3) Return Loss All Ports @ 824 - 915 MHz All Ports @ 1710 - 2169 MHz RL All Ports @ 2170 - 2690 MHz Isolation RFx to RFC VDD = 1.8 − 3.6 V , TA = −40 ◦C... + 85 ◦C, Z0 = 50 Ω (1,2,3) ISO 1981 - 2169 MHz 2170 - 2690 MHz VDD = 1.8 − 3.6 V , TA = −40 ◦C... + 85 ◦C, Z0 = 50 Ω (1,2,3) Isolation RFx to RFx 1981 - 2169 MHz 2170 - 2690 MHz ISO VDD = 1.8 − 3.6 V , TA = −40 ◦C... + 85 ◦C, Z0 = 50 Ω 1) Valid for all RF power levels, no compression behavior Network analyser input power: PIN = −20 dBm 3) On application board without any matching components 2) Data Sheet 7 Revision 3.2 2020-07-08 BGSA11GN10 Dual Single Pole Single Throw Antenna Tuning Switch RF large signal parameter 5 RF large signal parameter Table 4: RF large signal specifications Parameter Symbol RF operating voltage VRF_peak Values Unit Note / Test Condition Min. Typ. Max. – – 36 V PH2 – 90 – dBc 25 dBm, 50Ω, f0 = 786 MHz All RF Ports - Third Order Harmonics PH3 – 115 – dBc 25 dBm, 50Ω, f0 = 786 MHz All RF Ports - Second Order Harmon- PH2 – 90 – dBc 33 dBm, 50Ω, f0 = 824 MHz All RF Ports - Third Order Harmonics PH3 – 110 – dBc 33 dBm, 50Ω, f0 = 824 MHz All RF Ports PHx 105 – – dBc 25 dBm, 50Ω, CW mode IIP2, low IIP2,l – 110 – dBm IIP2, high IIP2,h – 120 – dBm IIP3 – 75 – dBm IIP3 conditions table 9 IIP3,SV – 75 – dBm SV-LTE conditions table 10 (1,2,3) Harmonic Generation up to 12.75 GHz All RF Ports - Second Order Harmonics ics Intermodulation Distortion IMD2 (1,2,3) IIP2 conditions table 8 Intermodulation Distortion IMD3 (1,2,3) IIP3 SV LTE Intermodulation (1,2,3) IIP3,SVLTE 1) Terminating Port Impedance: Z0 = 50 Ω 2) Supply Voltage: VDD = 1.8 − 3.6 V 3) On application board without any matching components Table 5: IIP2 conditions table Band In-Band Frequency Blocker Frequency 1 Blocker Power 1 Blocker Frequency 2 Blocker Power 2 [MHz] [MHz] [dBm] [MHz] [dBm] Band 1 Low 2140 1950 20 190 -15 Band 1 High 2140 1950 20 4090 -15 Band 5 Low 881.5 836.5 20 45 -15 Band 5 High 881.5 836.5 20 1718 -15 In-Band Frequency Blocker Frequency 1 Blocker Power 1 Blocker Frequency 2 Blocker Power 2 Table 6: IIP3 conditions table Band [MHz] [MHz] [dBm] [MHz] [dBm] Band 1 2140 1950 20 1760 -15 Band 5 881.5 836.5 20 791.5 -15 In-Band Frequency Blocker Frequency 1 Blocker Power 1 Blocker Frequency 2 Blocker Power 2 [MHz] [MHz] [dBm] [MHz] [dBm] Band 5 872 827 23 872 14 Band 13 747 786 23 747 14 Band 20 878 833 23 2544 14 Table 7: SV-LTE conditions table Band Data Sheet 8 Revision 3.2 2020-07-08 BGSA11GN10 Dual Single Pole Single Throw Antenna Tuning Switch Logic Truth Table 6 Logic Truth Table Table 8: Logic Table CTRL 1 CTRL 2 Mode RF1 to RFc Mode RF2 to RFc2 0 0 OFF OFF 0 1 OFF ON 1 0 ON OFF 1 1 ON ON CTRL1 and CTRL 2 can be connected together to control both switches at once. This enables the use of both SPSTs to reduce Ron by parallel switching Data Sheet 9 Revision 3.2 2020-07-08 BGSA11GN10 Dual Single Pole Single Throw Antenna Tuning Switch Application Information 7 Application Information Pin Configuration and Function RFC 10 9 1 RF1 2 8 RF2 GND 3 7 GND VDD 4 6 CTRL 2 5 CTRL 1 Figure 6: BGSA11GN10 Pin Configuration (top view) Table 9: Pin Definition and Function Pin No. Name Function 1 N.C. Not connected 2 RF1 RF1 port 3 GND Ground 4 VDD Power Supply 5 CTRL1 GPIO digital control line 6 CTRL2 GPIO digital control line 7 GND Ground 8 RF2 RF2 port 9 N.C. Not connected 10 RFC Common RF Data Sheet 10 Revision 3.2 2020-07-08 BGSA11GN10 Dual Single Pole Single Throw Antenna Tuning Switch Application Examples 8 Application Examples The BGSA11GN10 is a dual single pole single throw (SPST) RF switch in a 1.05 mm x 1.55 mm TSNP-10-1 package. Both SPST can be controlled individually by the control placed next to each other. This solution allows the use of the device for several applications shown in Fig. 7: • Low RON = 1Ω SPST (a) or ultra low RON = 0.5Ω SPST (b) • Tuning with 2 reactive devices such as capacitors or inductors. (c) • Combinations of above. (a) Single SPST (b) 2 SPSTs parallel (c) 2 SPSTs for Tuning C1 RF2 RFC VBATT RF1 CTRL 2 CTRL 1 RFC VBATT RF2 CTRL 2 CTRL 1 RF1 RF2 RFC VBATT RF1 CTRL 2 CTRL 1 C2 Figure 7: BGSA11GN10 realizable circuit configurations Single SPST shunt operation The configuration (a) is used to obtain an RON = 1Ω and COFF = 250f F. It can be used for series and shunt configurations. Note, that for single SPST shunt configuration, is is better to connect RFC to GND to avoid additional capacitance contribution of the unused part RF2 to GND as shown in Fig. 8. For simplicity, connecting the unused RF and Control Pin can be connected to ground. 10 RF2 RFC VBATT RF1 CTRL 2 CTRL 1 1 9 RF1 2 8 GND 3 7 GND VDD 4 6 CTRL 2 5 CTRL 1 Figure 8: BGSA11GN10 single SPST shunt configuration Data Sheet 11 Revision 3.2 2020-07-08 BGSA11GN10 Dual Single Pole Single Throw Antenna Tuning Switch Application Examples Low RON SPST shunt operation For lowest possible RON = 0.5Ω operation, it is required to connect the logic inputs CTRL 1 with CTRL 2 together and same for RF1 and RF2 as shown in Fig. 9 10 RF2 RF1 CTRL 2 CTRL 1 1 RFC VBATT RFC 9 RF1 2 8 RF2 GND 3 7 GND VDD 4 6 CTRL 2 5 CTRL 1 Figure 9: BGSA11GN10 low RON SPST shunt configuration Dual SPST for RF tuning The dual SPST can also be used for tuning applications, for example to tune capacitance or inductance. Fig. 10 shows as example a tunable capacitance with 4 steps by using 2 external MLCC capacitors. Note that the RF voltage should not exceed the specified 36 V over the switch device and also not for the used capacitor. 10 C1 1 C1 RF2 RF1 CTRL 1 CTRL 2 RFC VBATT RFC 9 RF2 C2 8 RF1 2 GND 3 7 GND VDD 4 6 CTRL 2 5 CTRL 1 C2 Figure 10: BGSA11GN10 as shunt capacitance tuning device For example, resulting capacitances using C1 and C2 can be controlled as shown in table 10. Resulting Q factors can be calculated using the RON values using the equation Q = Data Sheet 1 ωC RON with ω = 2πf . Same function can be realized also with inductors (Fig. 11) with Q = 12 ωL RON in table 11. Revision 3.2 2020-07-08 BGSA11GN10 Dual Single Pole Single Throw Antenna Tuning Switch Application Examples 10 RFC VBATT 1 L1 L1 RF2 RF1 CTRL 1 CTRL 2 RFC 9 RF2 8 RF1 2 L2 GND 3 7 GND VDD 4 6 CTRL 2 5 CTRL 1 L2 Figure 11: BGSA11GN10 as shunt inductance tuning device Table 10: Logic Table CTRL 1 CTRL 2 Mode RF1 to RFc Mode RF2 to RFc Capacitance RON 0 0 OFF OFF 500 fF 500 kΩ 0 1 OFF ON 250 fF + C2 1Ω 1 0 ON OFF 250 fF + C1 1Ω 1 1 ON ON C1 + C2 0,5 Ω Table 11: Logic Table Data Sheet CTRL 1 CTRL 2 Mode RF1 to RFc Mode RF2 to RFc Inductance RON 0 0 OFF OFF - 500 kΩ 0 1 OFF ON L2 1Ω 1 0 ON OFF L1 1Ω 1 1 ON ON L1 || L2 0,5 Ω 13 Revision 3.2 2020-07-08 BGSA11GN10 Dual Single Pole Single Throw Antenna Tuning Switch Package Information 9 Package Information Table 12: Mechanical Data Parameter Symbol Value Unit X-Dimension X 1.1 ± 0.05 mm Y-Dimension Y 1.5 ± 0.05 mm Size Size 2.25 mm2 Height H 0.375 +0.025/−0.015 mm Top9view Bottom9view 0.375 ±0.025 B 7 3 8 2 9 1 0.2 ±0.05 10x Pin919marking 6 4 0.4 39x9 0.49 =9 1.2 5 0.1 B 0.4 0.029MAX. 0.2 ±0.05 10x 1.1 ±0.05 1.5 ±0.05 A 0.8 10 0.1 A TSNP-10-1-PO9 V02 Figure 12: TSNP-10-1 Package Outline (top, side and bottom views) Pin 1 marking 11 Date code (YW) Type code TSNP-10-1MK V02 Figure 13: TSNP10-1 Marking Specification (top view): Date code digits Y and W defined in Table 13/14 Data Sheet 14 Revision 3.2 2020-07-08 BGSA11GN10 Dual Single Pole Single Throw Antenna Tuning Switch Package Information Table 13: Year date code marking - digit "Y" Year "Y" Year "Y" Year "Y" 2010 0 2020 0 2030 0 2011 1 2021 1 2031 1 2012 2 2022 2 2032 2 2013 3 2023 3 2033 3 2014 4 2024 4 2034 4 2015 5 2025 5 2035 5 2016 6 2026 6 2036 6 2017 7 2027 7 2037 7 2018 8 2028 8 2038 8 2019 9 2029 9 2039 9 Table 14: Week date code marking - digit "W" Data Sheet Week "W" Week "W" Week "W" Week "W" Week "W" 1 A 12 N 23 4 34 h 45 v 2 B 13 P 24 5 35 j 46 x 3 C 14 Q 25 6 36 k 47 y 4 D 15 R 26 7 37 l 48 z 5 E 16 S 27 a 38 n 49 8 6 F 17 T 28 b 39 p 50 9 7 G 18 U 29 c 40 q 51 2 8 H 19 V 30 d 41 r 52 3 9 J 20 W 31 e 42 s 53 M 10 K 21 Y 32 f 43 t 11 L 22 Z 33 g 44 u 15 Revision 3.2 2020-07-08 BGSA11GN10 Dual Single Pole Single Throw Antenna Tuning Switch Package Information Optionalxsolderxmaskxdam 0.4 0.4 0.4 0.2 0.475 10xx0.25 0.4 0.475 10xx0.25 0.4 10xx0.25 Copper 0.4 Stencilxapertures Solderxmask TSNP-10-2-FPx V01 Figure 14: Land pattern and stencil mask (TSNP-10-1) 0.5 1.7 Pin 1 marking 8 4 1.3 TSNP-10-1-TP V01 Figure 15: Carrier Tape (TSNP-10-1) Data Sheet 16 Revision 3.2 2020-07-08 Revision History Creation of document Revision 3.2, 2020-07-08 Page or Item Subjects (major changes since previous revision) 5 Typo at max. control current high corrected Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2020-07-08 Published by Infineon Technologies AG 81726 Munich, Germany c 2020 Infineon Technologies AG. All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference Doc_Number IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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