BGT60LTR11SAIPXUMA1

BGT60LTR11AIP Datasheet Low power 60 GHz Doppler radar sensor with antennas in package Features • • • • 60 GHz transceiver MMIC with one transmitter and one receiver unit Antennas in package (AIP) (6.7 × 3.3 × 0.56 mm3) Pulsed Doppler mode of operation for low power consumption Autonomous mode - Integrated detector for motion and direction of movement - Direct output of motion detection signal - 15 configurable thresholds for target detection range - 16 configurations for detection status hold time - 4 configurable operating frequencies - 4 configurable pulse repetition rates • High performance enabled from Infineon’s BiCMOS technology - Fully integrated low phase noise VCO and PLL - Medium power amplifier with configurable output power and integrated power detector - Low noise variable gain baseband amplifiers - Fully ESD protected device Potential applications The BGT60LTR11AIP adds ‘smartness’ to traditional motion sensing applications and beyond: • Smart home devices (thermostats, smoke detectors, smart speakers, etc.) • Smart building (contactless switches, occupancy and proximity sensors, etc.) • Smart appliances (service robots, washing machine, and kitchen appliances) • Smart lighting systems and security systems including IP cameras • Screen based systems (TVs, monitors, laptops, or tablets) Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Description The BGT60LTR11AIP is a fully integrated millimeter wave Doppler motion sensor with antenna in package. The sensor detects the motion as well as the direction of a moving target. It supports the following two operation modes, which can be selected via hardware preset pins: • Autonomous mode: the sensor configuration parameters, detection threshold and hold time are set via external resistors; the pulse repetition rate and the operation frequency are set via hardware preset pins • SPI mode: it allows the SPI connection to a microcontroller for more real time sensor configurations, that can be written in the internal registers through SPI The BGT60LTR11AIP integrates a medium power amplifier with configurable/adjustable output power, which can be controlled via SPI. The transmitted power is monitored by an integrated power detector. The packaged monolithic microwave integrated circuit (MMIC) features integrated broad-beam antennas for maximum area coverage. Product type Package Marking Ordering code BGT60LTR11AIP PG-UF2BGA-42 L11E BGT60LTR11AIPE6327XUMA2 Operates in the frequency band from 61 GHz to 61.5 GHz BGT60LTR11BAIP PG-UF2BGA-42 L11J BGT60LTR11BAIPXUMA1 Operates in the frequency band from 60.5 GHz to 61 GHz (Japanese ISM band) BGT60LTR11SAIP PG-UF2BGA-42 S11E BGT60LTR11SAIPXUMA1 BGT60LTR11AIP down-specified version with reduced detection range (autonomous mode) and operating temperature from -10 to +70°C Datasheet www.infineon.com Description Please read the sections "Important notice" and "Warnings" at the end of this document V2.6 2022-08-01 BGT60LTR11AIP Datasheet Table of contents Table of contents Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 ESD integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Power supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 System parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 PLL parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Frequency divider . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Antenna characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2 2.1 SPI interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 SPI timing requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 3.1 3.2 3.3 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Pin out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Pin definition and function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 4 Package dimensions and footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Datasheet 2 V2.6 2022-08-01 BGT60LTR11AIP Datasheet 1 Electrical characteristics 1 Electrical characteristics 1.1 Absolute maximum ratings Table 1 Absolute maximum ratings TOP = -20°C .. 85°C for BGT60LTR11AIP and BGT60LTR11BAIP; TOP = -10°C .. 70°C for BGT60LTR11SAIP; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified). Parameter Symbol Values Min. Unit Typ. Max. Note or Test Condition Supply voltage VDD -0.3 – 1.9 V Voltage applied to non-RF I/O pins VDC,I/O -0.3 – VDD+0.3 V Total power dissipation PDISS – – 300 mW Storage temperature range TSTG -40 – 150 °C Operational temperature range (BGT60LTR11AIP and BGT60LTR11BAIP) TOP -20 – +85 °C Temperature at package soldering point Operational temperature range (BGT60LTR11SAIP) TOP -10 – +70 °C Temperature at package soldering point Thermal resistance of package Rth,P – 67 – K/W Represents bulk silicon to solder balls Attention: Stresses above the maximum values listed here may cause permanent damage to the device. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Exposure to conditions at or below absolute maximum rating but above the specified maximum operation conditions may affect device reliability and lifetime. Functionality of the device might not be given under these conditions. 1.2 Table 2 ESD integrity ESD integrity Parameter Symbol Values Min. Typ. Unit Note or Test Condition Max. ESD robustness HBM VESD-HBM -1 – 1 kV All pins ESD robustness CDM VESD-CDM -500 – 500 V All pins Datasheet 3 V2.6 2022-08-01 BGT60LTR11AIP Datasheet 1 Electrical characteristics 1.3 Power supply Table 3 Power supply electrical characteristics TOP = -20°C .. 85°C for BGT60LTR11AIP and BGT60LTR11BAIP; TOP = -10°C .. 70°C for BGT60LTR11SAIP. Parameter Symbol Values Min. Unit Typ. Max. Note or Test Condition Supply voltage VDD 1.45 1.5 1.6 V Current consumption in pulse-on phase IPulse_ON – 128 – mA Current consumption in pulse-off phase IPulse_OFF – 0.8 – mA Pulsed mode average power consumption P5/2000 – 2.3 – mW Duty cycle of 5/2000 µs P5/1000 – 3.4 – mW Duty cycle of 5/1000 µs P5/500 – 5.6 – mW Duty cycle of 5/500 µs P5/250 – 10.3 – mW Duty cycle of 5/250 µs 1.4 System parameters Table 4 System parameters TOP = -20°C .. 85°C for BGT60LTR11AIP and BGT60LTR11BAIP; TOP = -10°C .. 70°C for BGT60LTR11SAIP. Parameter Symbol Values Min. Unit Typ. Max. Note or Test Condition Supply voltage VDD 1.45 1.5 1.6 V Transmitted frequency (BGT60LTR11AIP and BGT60LTR11SAIP) fTX 61 61.25 61.5 GHz Vtune = VCPOUTPLL Transmitted frequency (BGT60LTR11BAIP) fTX_B 60.5 60.75 61 GHz Vtune = VCPOUTPLL Output power (EIRP1) ) PTX – +10 – dBm Spurious emission < 40 GHz (EIRP) PSPUR1 – – -42 dBm FCC 15.209 Spurious emission > 40 GHz and < 57 PSPUR2 GHz (EIRP) – – -20 dBm ETSI EN 305 550 Spurious emission > 64 GHz and < 78 PSPUR3 GHz (EIRP) – – -20 dBm ETSI EN 305 550 Spurious emission > 78 GHz (EIRP) – – -30 dBm ETSI EN 305 550 – -10 – MHz/K TOP = -20°C .. +85°C VDD = 1.5 V Free running VCO Frequency drift vs. temperature 1) PSPUR4 Δf/ΔT Equivalent isotopic radiated power. Datasheet 4 V2.6 2022-08-01 BGT60LTR11AIP Datasheet 1 Electrical characteristics 1.5 PLL parameters Table 5 PLL parameters TOP = -20°C .. 85°C for BGT60LTR11AIP and BGT60LTR11BAIP; TOP = -10°C .. 70°C for BGT60LTR11SAIP; VDD = 1.45 V .. 1.6 V. Parameter Symbol Values Min. Unit Typ. Max. External crystal frequency fCRY – 38.4 – MHz PLL lock frequency (BGT60LTR11AIP and BGT60LTR11SAIP)1) fL 61 – 61.5 GHz PLL lock frequency (BGT60LTR11BAIP)1) fL_B 60.5 – 61 GHz 1) Note or Test Condition Programmed through Reg5 (for more information refer to AN625). Keep a 50 MHz guard band each side from the band edge to avoid outside of ISM band emission. Warning: 1.6 Sensors operating in close vicinity at the same operating frequency can interfere! Frequency divider Table 6 Frequency divider electrical characteristics TOP = -20°C .. 85°C for BGT60LTR11AIP and BGT60LTR11BAIP; TOP = -10°C .. 70°C for BGT60LTR11SAIP; VDD = 1.45 V .. 1.6 V, Freq = 61.25 GHz. Parameter Symbol Values Min. Typ. Unit Note or Test Condition Max. Divider output frequency 1 fDIV1 – 9.6 – MHz Selectable via SPI (divided by 4 from crystal oscillator) Dividing factor 2 DDIV1 – 2^14 – – Selectable via SPI Dividing factor 3 DDIV2 – 2^17 – – Selectable via SPI Dividing factor 4 DDIV3 – 2^21 – – Selectable via SPI Divider output voltage range VDIV 0 – VDD V External capacitive load CextLoad – – 15 pF Datasheet 5 V2.6 2022-08-01 BGT60LTR11AIP Datasheet 1 Electrical characteristics 1.7 Table 7 Antenna characteristics Antenna in package specifications Parameter Symbol Values Min. Unit Typ. Max. Note or Test Condition Operating frequency range (BGT60LTR11AIP and BGT60LTR11SAIP) fop 60.5 – 61.5 GHz Transmitter antenna gain GTX – 6 – dBi @ Freq = 61.25 GHz Receiver antenna gain GRX – 6 – dBi @ Freq = 61.25 GHz Horizontal -6dB beamwidth H-6dBbw – ±50 – deg @ Freq = 61.25 GHz Vertical -6dB beamwidth E-6dBbw – ±70 – deg @ Freq = 61.25 GHz Horizontal sidelobe level (H-SLL) – 12 – dB @ Freq = 61.25 GHz Vertical sidelobe level (V-SLL) – 12 – dB @ Freq = 61.25 GHz TX-RX isolation on antenna level – 35 – dB @ Freq = 61.25 GHz Datasheet 6 V2.6 2022-08-01 BGT60LTR11AIP Datasheet 2 SPI interface 2 SPI interface 2.1 SPI timing requirements The BGT60LTR11AIP is configured using a 4-wire SPI. It is used to configure the internal blocks of the BGT60LTR11AIP chip registers. The main tasks are to set the mode of operation of the TX and/or RX chain and the baseband section. Communication with an external microcontroller is possible through the four dedicated pins SPIDI, SPIDO, SPICS and SPICLK. Figure 1 demonstrates how the timing of the SPI behaves. The “working edge” is the rising edge of the clock SPICLK. The master application processor presents data for BGT60LTR11AIP at the falling edge on SPIDI, while BGT60LTR11AIP samples data at the rising edge. Read data is presented for the master on the rising edge on SPIDO. Asynchronous reset (SPIRSTN) must be de-asserted at least 10 ns before the falling edge of SPICLK. Refer to the application note AN625 for all details related to the SPI registers to control the MMIC. Figure 1 SPI timing diagram Table 8 SPI timing requirements Parameter Symbol Values Min. Typ. Unit Note or Test Condition 50 MHz, with