BSC010N04LS
MOSFET
OptiMOSTMPower-MOSFET,40V
TDSON-8FL(enlargedsourceinterconnection)
8
Features
•Optimizedforsychronousrectification
•Verylowon-resistanceRDS(on)
•100%avalanchetested
•Superiorthermalresistance
•N-channel,logiclevel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•Highersolderjointreliabilityduetoenlargedsourceinterconnection
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
40
V
RDS(on),max
1.0
mΩ
ID
281
A
Qoss
84
nC
Qg(0V..10V)
95
nC
Type/OrderingCode
Package
BSC010N04LS
TDSON-8 FL
1)
Marking
010N04LS
1
2
7
6
5
5
3
4
4
3
2
6
7
8
1
S1
8D
S2
7D
S3
6D
G4
5D
RelatedLinks
-
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.4,2020-03-13
OptiMOSTMPower-MOSFET,40V
BSC010N04LS
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.4,2020-03-13
OptiMOSTMPower-MOSFET,40V
BSC010N04LS
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
281
178
247
156
38
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=50K/W2)
-
1124
A
TC=25°C
-
-
50
A
TC=25°C
EAS
-
-
330
mJ
ID=50A,RGS=25Ω
Gate source voltage
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
139
2.5
W
TC=25°C
TA=25°C,RthJA=50K/W2)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche current, single pulse
IAS
Avalanche energy, single pulse
Continuous drain current1)
Pulsed drain current3)
4)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Values
Min.
Typ.
Max.
RthJC
-
0.5
0.9
K/W
-
Thermal resistance, junction - case,
top
RthJC
-
-
20
K/W
-
Device on PCB,
6 cm2 cooling area2)
RthJA
-
-
50
K/W
-
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
Final Data Sheet
3
Rev.2.4,2020-03-13
OptiMOSTMPower-MOSFET,40V
BSC010N04LS
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
-
2
V
VDS=VGS,ID=250µA
-
0.1
10
1
100
µA
VDS=40V,VGS=0V,Tj=25°C
VDS=40V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
1.0
0.85
1.3
1.0
mΩ
VGS=4.5V,ID=50A
VGS=10V,ID=50A
Gate resistance1)
RG
-
0.8
1.6
Ω
-
Transconductance
gfs
140
270
-
S
|VDS|>2|ID|RDS(on)max,ID=50A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
40
-
Gate threshold voltage
VGS(th)
1.2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance1)
Values
Min.
Typ.
Max.
Ciss
-
6800
9520
pF
VGS=0V,VDS=20V,f=1MHz
Coss
-
1900
2660
pF
VGS=0V,VDS=20V,f=1MHz
Reverse transfer capacitance
Crss
-
160
320
pF
VGS=0V,VDS=20V,f=1MHz
Turn-on delay time
td(on)
-
10
-
ns
VDD=20V,VGS=10V,ID=30A,
RG,ext,ext=1.6Ω
Rise time
tr
-
12
-
ns
VDD=20V,VGS=10V,ID=30A,
RG,ext,ext=1.6Ω
Turn-off delay time
td(off)
-
46
-
ns
VDD=20V,VGS=10V,ID=30A,
RG,ext,ext=1.6Ω
Fall time
tf
-
9
-
ns
VDD=20V,VGS=10V,ID=30A,
RG,ext,ext=1.6Ω
Unit
Note/TestCondition
Output capacitance1)
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Values
Min.
Typ.
Max.
Qgs
-
16
-
nC
VDD=20V,ID=50A,VGS=0to10V
Qg(th)
-
11
-
nC
VDD=20V,ID=50A,VGS=0to10V
Gate to drain charge
Qgd
-
15
21
nC
VDD=20V,ID=50A,VGS=0to10V
Switching charge
Qsw
-
21
-
nC
VDD=20V,ID=50A,VGS=0to10V
Gate charge total
Qg
-
95
133
nC
VDD=20V,ID=50A,VGS=0to10V
Gate plateau voltage
Vplateau
-
2.4
-
V
VDD=20V,ID=50A,VGS=0to10V
Gate charge total1)
Qg
-
49
69
nC
VDD=20V,ID=50A,VGS=0to4.5V
Gate charge total, sync. FET
Qg(sync)
-
84
-
nC
VDS=0.1V,VGS=0to10V
Qoss
-
84
118
nC
VDD=20V,VGS=0V
1)
1)
1)
Output charge
1)
2)
Defined by design. Not subject to production test
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.4,2020-03-13
OptiMOSTMPower-MOSFET,40V
BSC010N04LS
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Diode pulse current
Values
Unit
Note/TestCondition
139
A
TC=25°C
-
1124
A
TC=25°C
-
0.81
1
V
VGS=0V,IF=50A,Tj=25°C
trr
-
36
72
ns
VR=20V,IF=50A,diF/dt=400A/µs
Qrr
-
50
-
nC
VR=15V,IF=IS,diF/dt=400A/µs
Min.
Typ.
Max.
IS
-
-
IS,pulse
-
VSD
Reverse recovery time
Reverse recovery charge
Diode forward voltage
1)
1)
Defined by design. Not subject to production test
Final Data Sheet
5
Rev.2.4,2020-03-13
OptiMOSTMPower-MOSFET,40V
BSC010N04LS
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
160
300
140
250
120
200
ID[A]
Ptot[W]
100
80
150
60
100
40
50
20
0
0
40
80
120
0
160
0
20
40
60
TC[°C]
80
100
120
140
160
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
4
101
10
103
10 µs
102
100
1 µs
0.5
100 µs
ZthJC[K/W]
ID[A]
1 ms
10 ms
1
10
DC
0.2
10
-1
0.1
0.05
0.02
100
0.01
10-2
single pulse
10-1
10-2
10-1
100
101
102
10-3
10-6
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.4,2020-03-13
OptiMOSTMPower-MOSFET,40V
BSC010N04LS
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
400
1.5
4.5 V
4V
350
5V
3.5 V
3.5 V
3.2 V
10 V
300
3.2 V
4V
4.5 V
1.0
250
7V
RDS(on)[mΩ]
ID[A]
3V
200
2.8 V
150
5V
10 V
8V
0.5
100
50
0
0
1
0.0
2
0
20
40
VDS[V]
60
80
100
80
100
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
400
320
320
240
240
ID[A]
gfs[S]
400
160
160
25 °C
150 °C
80
0
80
0
1
2
3
4
5
0
0
VGS[V]
40
60
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
20
gfs=f(ID);Tj=25°C
7
Rev.2.4,2020-03-13
OptiMOSTMPower-MOSFET,40V
BSC010N04LS
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
2.00
2.5
1.80
1.60
2.0
1.20
1.5
VGS(th)[V]
RDS(on)[mΩ]
1.40
max
1.00
typ
0.80
1.0
0.60
0.40
0.5
0.20
0.00
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
RDS(on)=f(Tj);ID=50A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;ID=250µA
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
10
180
Tj[°C]
104
Ciss
25 °C
25 °C, max
150 °C
150 °C, max
Coss
IF[A]
103
C[pF]
103
Crss
102
101
102
0
10
20
30
40
101
0.00
0.25
VDS[V]
0.75
1.00
1.25
1.50
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.50
IF=f(VSD);parameter:Tj
8
Rev.2.4,2020-03-13
OptiMOSTMPower-MOSFET,40V
BSC010N04LS
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
12
20 V
10
8V
25 °C
100 °C
8
VGS[V]
125 °C
IAV[A]
32 V
101
6
4
2
100
100
101
102
103
tAV[µs]
0
0
20
40
60
80
100
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=50Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Diagram Gate charge waveforms
46
44
42
VBR(DSS)[V]
40
38
36
34
32
30
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.4,2020-03-13
OptiMOSTMPower-MOSFET,40V
BSC010N04LS
5PackageOutlines
DOCUMENT NO.
Z8B000193699
REVISION
03
DIMENSION
A
A1
b
D
D1
D2
E
E1
E2
e
L
M
MILLIMETERS
MIN.
MAX.
0.90
1.20
0.15
0.35
0.26
0.54
4.80
5.35
3.70
4.40
0.02
0.23
5.70
6.10
5.90
6.42
3.88
4.42
1.27
0.69
0.90
0.45
0.69
SCALE 10:1
0
1
2
3mm
EUROPEAN PROJECTION
ISSUE DATE
19.06.2019
Figure1OutlineTDSON-8FL,dimensionsinmm
Final Data Sheet
10
Rev.2.4,2020-03-13
OptiMOSTMPower-MOSFET,40V
BSC010N04LS
PG-TDSON-8FL: RecommenGHd BoDrdpads & Apertures
Figure 2
Final Data Sheet
Outline Boardpads (TDSON-8 FL)
11
Rev.2.4,2020-03-13
OptiMOS TM Power-MOSFET , 40 V
BSC010N04LS
Figure 3
Final Data Sheet
Outline Tape (TDSON-8 FL )
12
Rev. 2.4, 2020-03-13
OptiMOS TM Power-MOSFET , 40 V
BSC010N04LS
Revision History
BSC010N04LS
Revision: 2020-03-13, Rev. 2.4
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.2
2014-06-27
Rev. 2.2
2.3
2019-09-27
Update package drawings
2.4
2020-03-13
Update current rating
Trademarks
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81726 München, Germany
© 2020 Infineon Technologies AG
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Final Data Sheet
13
Rev. 2.4, 2020-03-13