BSD316SNL6327XT

BSD316SN OptiMOS™2 Small-Signal-Transistor Product Summary Features VDS • N-channel RDS(on),max • Enhancement mode • Logic level (4.5V rated) 30 V VGS=10 V 160 mW VGS=4.5 V 280 ID 1.4 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT363 • 100% lead-free; RoHS compliant 6 • Halogen-free according to IEC61249-2-21 1 Type Package Tape and Reel Information BSD316SN PG-SOT363 H6327: 3000 pcs/ reel 2 5 4 3 Marking Lead Free Packing X7s Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 1.4 T A=70 °C 1.1 Pulsed drain current I D,pulse T A=25 °C 5.6 Avalanche energy, single pulse E AS I D=1.4 A, R GS=25 W 3.7 Reverse diode dv /dt dv /dt I D=1.4 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C 6 Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature A mJ kV/µs ±20 V 0.5 W -55 ... 150 °C 0 (2|I D|R DS(on)max, I D=1.1 A - 2.3 - Transconductance g fs S 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides of the PCB. Rev 2.4 page 2 2013-04-10 BSD316SN Parameter Values Symbol Conditions Unit min. typ. max. - 71 94 - 26 35 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 5 7 Turn-on delay time t d(on) - 3.4 - Rise time tr - 2.3 - Turn-off delay time t d(off) - 5.8 - Fall time tf - 1.0 - Gate to source charge Q gs - 0.3 - Gate to drain charge Q gd - 0.2 - Gate charge total Qg - 0.6 - Gate plateau voltage V plateau - 3.4 - V - - 0.5 A - - 5.6 - 0.8 1.1 V - 9.1 - ns - 2.6 - nC V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=1.4 A, R G,ext=6 W pF ns Gate Charge Characteristics V DD=15 V, I D=1.4 A, V GS=0 to 5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev 2.4 T A=25 °C V GS=0 V, I F=1.4 A, T j=25 °C V R=15 V, I F=1.4 A, di F/dt =100 A/µs page 3 2013-04-10 BSD316SN 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 1.5 0.5 0.375 ID [A] Ptot [W] 1 0.25 0.5 0.125 0 0 0 40 80 120 160 0 20 40 TA [°C] 60 80 100 120 140 160 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 103 1 µs 10 µs 100 µs 1 ms 100 10 ms 0.5 ZthJA [K/W] ID [A] 102 10-1 DC 0.2 0.1 0.05 0.02 101 0.01 10-2 single pulse 10-3 100 10-1 100 101 102 VDS [V] Rev 2.4 10-5 10-4 10-3 10-2 10-1 100 101 102 tp [s] page 4 2013-04-10 BSD316SN 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 4 400 350 4V 4.5 V 3 300 RDS(on) [mW] ID [A] 10 V 2 3.5 V 3.5 V 250 4V 4.5 V 200 5V 150 7V 10 V 1 100 3V 50 2.8 V 0 0 0 1 2 3 0 1 VDS [V] 2 3 4 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 4 6 3 gfs [S] ID [A] 4 2 2 1 150 °C 25 °C 0 0 0 1 2 3 4 5 VGS [V] Rev 2.4 0 2 4 6 8 ID [A] page 5 2013-04-10 BSD316SN 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=1.4 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=3.7 µA parameter: I D 320 2.8 280 2.4 240 98 % 2 200 VGS(th) [V] RDS(on) [mW] 98 % 160 1.6 typ 1.2 120 2% typ 0.8 80 0.4 40 0 0 -60 -20 20 60 100 140 -60 -20 20 Tj [°C] 60 100 140 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 102 101 Ciss Coss 100 IF [A] C [pF] 25 °C 101 10-1 150 °C Crss 150 °C, 98% 10-2 100 10-3 0 5 10 15 20 VDS [V] Rev 2.4 25 °C, 98% 0 0.4 0.8 1.2 1.6 VSD [V] page 6 2013-04-10 BSD316SN 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=1.4 A pulsed parameter: T j(start) parameter: V DD 101 8 7 6 25 °C 100 15 V 5 VGS [V] IAV [A] 6V 100 °C 24 V 4 3 125 °C 10-1 2 1 10-2 0 100 101 102 0 103 0.25 tAV [µs] 0.5 0.75 1 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 µA 36 V GS 35 Qg 34 VBR(DSS) [V] 33 32 31 V gs(th) 30 29 28 Q g(th) Q sw 27 Q gs 26 -60 -20 20 60 100 Q gate Q gd 140 Tj [°C] Rev 2.4 page 7 2013-04-10 BSD316SN SOT363 Package Outline: Reflow soldering: Rev 2.4 Packing: page 8 2013-04-10 BSD316SN Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.4 page 9 2013-04-10