BSO204PNTMA1

BSO204P OptiMOS -P Power-Transistor TM Product Summary Feature • Dual P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated Package BSO204P P-SO 8 -20 V RDS(on) 30 mΩ ID -7 A S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View Type VDS SIS00070 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25°C -7 TA=70°C -5.6 ID puls -28 EAS 63 mJ dv/dt -6 kV/µs Gate source voltage VGS ±12 V Power dissipation Ptot 2 W -55... +150 °C Pulsed drain current TA=25°C Avalanche energy, single pulse ID =-7 A , VDD=-10V, RGS =25Ω Reverse diode dv/dt IS =-7A, VDS=-16V, di/dt=200A/µs, Tjmax =150°C TA=25°C Tj , Tstg Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev.1.2 55/150/56 Page 1 2001-12-03 BSO204P Thermal Characteristics Symbol Parameter Values Unit min. typ. max. - - 50 @ min. footprint, t < 10s - - 110 @ 6 cm 2 cooling area - - 62.5 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -20 - - VGS(th) -0.6 -0.9 -1.2 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =-250µA Gate threshold voltage, VGS = VDS ID =-60µA IDSS Zero gate voltage drain current µA VDS =-20V, VGS =0, Tj =25°C - -0.1 -1 VDS =-20V, VGS =0, Tj =150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 34 42 mΩ RDS(on) - 23.7 30 Gate-source leakage current VGS =-12V, VDS =0 Drain-source on-state resistance VGS =-2.5V, ID =-6.1A Drain-source on-state resistance VGS =-4.5, ID =-7A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec. Rev.1.2 Page 2 2001-12-03 BSO204P Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 12.5 25 - S pF Dynamic Characteristics Transconductance gfs çVDS ç≥2*çIDç*RDS(on)max ID =-5.6A Input capacitance Ciss VGS =0, VDS =-15V, - 1513 - Output capacitance Coss f=1MHz - 567 - Reverse transfer capacitance Crss - 469 - Turn-on delay time td(on) VDD =-10V, VGS =-4.5V, - 12.9 19.4 Rise time tr ID =-1A, RG=6Ω - 20.5 30.7 Turn-off delay time td(off) - 40.6 61 Fall time tf - 35.3 52.4 - -2.7 -4 - -11.3 -16.9 - -23.9 -35.8 V(plateau) VDD =-15V, ID =-7A - -1.7 - V IS - - -2.5 A - - -28 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-15V, ID =-7A VDD =-15V, ID =-7A, nC VGS =0 to -4.5V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0, IF=-7A - -0.87 -1.35 V Reverse recovery time trr VR =-10V, |IF | = |lD |, - 28.7 35.9 ns Reverse recovery charge Qrr diF /dt=100A/µs - 14.5 18.1 nC Rev.1.2 Page 3 2001-12-03 BSO204P 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: |VGS |≥ 4.5 V 2.2 BSO204P BSO204P -7.5 A W 1.8 -6 -5.5 -5 1.4 ID Ptot 1.6 -4.5 1.2 -4 1 -3.5 -3 0.8 -2.5 0.6 -2 0.4 -1.5 -1 0.2 -0.5 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TA 3 Transient thermal impedance ZthJS = f (tp) ID = f ( VDS ) parameter : D = tp /T parameter : D = 0 , TA = 25 °C BSO204P = RD o S( VD BSO204P K/W S tp = 180.0µs 10 1 n) 1 Z thJS 1 ms ID -10 10 2 /I D A 160 TA 4 Safe operating area -10 2 °C 10 0 10 ms 10 -1 -10 0 D = 0.50 0.20 10 -2 0.10 0.05 -10 -1 0.02 DC 10 -3 0.01 single pulse -10 -2 -1 -10 -10 0 -10 1 V -10 2 VDS Rev.1.2 Page 4 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp 2001-12-03 0 BSO204P 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS 0.1 30 Vgs = -2.5V Ω Vgs = -2.5V A RDS(on) - ID 0.08 Vgs = -2.8V Vgs = -3V Vgs = -3.5V Vgs = -4.5V Vgs = -6V 20 15 0.07 0.06 0.05 Vgs= -2.8 Vgs= -3 Vgs= -3.5 Vgs = - 4.5V Vgs= - 6V 0.04 10 0.03 0.02 5 0.01 0 0 0.5 1 1.5 V 2 0 0 3 5 10 15 20 A - V DS 30 - ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS |≥ 2 x |ID| x RDS(on)max gfs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: tp = 80 µs 45 28 A S 24 22 35 30 18 gfs - ID 20 16 25 14 20 12 10 15 8 10 6 4 5 2 0 0 0.5 1 1.5 V 2.5 - V GS Rev.1.2 0 0 5 10 15 20 A 30 - ID Page 5 2001-12-03 BSO204P 9 Drain-source on-resistance 10 Gate threshold voltage RDS(on) = f(Tj ) VGS(th) = f (Tj) parameter: ID = -7 A, VGS = -4.5 V parameter: VGS = VDS , ID = -60 µA 45 1.6 V - VGS(th) RDS(on) mΩ 35 98% 30 1.2 98% 1 0.8 typ. 0.6 25 typ. 2% 0.4 20 0.2 15 -60 -20 20 60 100 °C 0 -60 160 -20 20 60 100 Tj °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0, f=1 MHz parameter: Tj , tp = 80 µs 10 4 -10 2 BSO204P A pF Ciss C IF -10 1 10 3 Coss -10 0 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 2 0 5 10 V 20 - VDS Rev.1.2 -10 -1 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD Page 6 2001-12-03 BSO204P 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ), par.: ID = -7 A |VGS| = f (QGate ) VDD = -10 V, RGS = 25 Ω parameter: ID = -7 A pulsed 65 mJ 12 V 55 10 9 - VGS E AS 50 45 40 8 7 35 0.2 VDS max. 0.5 VDS max. 0.8 VDS max. 6 30 5 25 4 20 3 15 10 2 5 1 0 25 50 75 100 °C 150 Tj 0 0 5 10 15 20 25 30 35 40 nC 50 |QGate| 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -24.5 BSO204P V V (BR)DSS -23.5 -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 -20 20 60 100 °C 180 Tj Rev.1.2 Page 7 2001-12-03 BSP204P Rev.1.2 Page 8 2001-12-03