BSP299L6327

BSP 299 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.1 ... 4.0 V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 299 500 V 0.4 A 4Ω SOT-223 BSP 299 Type BSP 299 Ordering Code Q67000-S225 D Tape and Reel Information E6327 Maximum Ratings Parameter Symbol Continuous drain current ID TA = 44 °C Values Unit A 0.4 IDpuls DC drain current, pulsed TA = 25 °C 1.6 EAS Avalanche energy, single pulse mJ ID = 1.2 A, VDD = 50 V, RGS = 25 Ω L = 163 mH, Tj = 25 °C 130 Gate source voltage VGS Power dissipation Ptot TA = 25 °C Semiconductor Group ± 20 V W 1.8 1 Sep-12-1996 BSP 299 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ≤ 70 Therminal resistance, junction-soldering point 1) RthJS ≤ 10 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 0 °C Gate threshold voltage 500 - - 2.1 3 4 VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V IDSS µA VDS = 500 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 500 V, VGS = 0 V, Tj = 125 °C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-state resistance - 10 100 Ω RDS(on) VGS = 10 V, ID = 0.4 A Semiconductor Group nA - 2 3.5 4 Sep-12-1996 BSP 299 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 0.4 A Input capacitance 0.3 pF - 300 400 - 40 60 - 15 25 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 1.2 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω Rise time - 8 12 - 15 22 - 55 70 - 30 40 tr VDD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω Semiconductor Group 3 Sep-12-1996 BSP 299 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed - - 1.6 V 0.9 1.2 trr ns - 300 - Qrr VR = 100 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 0.4 - VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 0.8 A, Tj = 25 °C Reverse recovery time - ISM TA = 25 °C Inverse diode forward voltage A µC - 4 2.5 - Sep-12-1996 BSP 299 Power dissipation Ptot = ƒ(TA) Ptot Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 2.0 0.45 W A 1.6 ID 0.35 1.4 0.30 1.2 0.25 1.0 0.20 0.8 0.15 0.6 0.10 0.4 0.05 0.2 0.0 0.00 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 TA 120 °C 160 TA Safe operating area ID=f(VDS) Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T parameter : D = 0, TC=25°C 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 10 -2 0.20 0.10 10 -3 0.05 single pulse 10 -4 0.02 0.01 10 -5 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Semiconductor Group 5 Sep-12-1996 BSP 299 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 0.9 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 13 jh g e Ptot = 2W k ifd lc Ω b a A 11 VGS [V] ID 0.7 0.6 a 0.5 0.4 0.3 a 4.0 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 k 10.0 l 20.0 RDS (on) 10 9 8 7 b 6 5 4 l jh 2 0.1 VGS [V] = 1 0.0 a 4.0 b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 9.0 k l 10.0 20.0 0 0 2 4 6 8 10 12 V 16 0.00 0.10 0.20 0.30 0.40 VDS A 0.60 ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, 2.6 2.6 A S 2.2 ID d figc ke 3 0.2 2.2 gfs 2.0 2.0 1.8 1.8 1.6 1.6 1.4 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0.0 0.0 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 0.0 0.4 0.8 1.2 1.6 A ID 2.2 Sep-12-1996 BSP 299 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 0.4 A, VGS = 10 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 10 4.6 Ω V 98% 4.0 RDS (on) 8 VGS(th) 7 3.6 typ 3.2 6 2.8 2.4 98% 5 typ 2% 2.0 4 1.6 3 1.2 2 0.8 1 0.4 0 0.0 -60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C Tj 160 Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 1 10 1 nF A C IF 10 0 10 0 Ciss 10 -1 10 -1 Tj = 25 °C typ Coss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) Crss 10 -2 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 Sep-12-1996 BSP 299 Avalanche energy EAS = ƒ(Tj ) parameter: ID = 1.2 A, VDD = 50 V RGS = 25 Ω, L = 163 mH EAS Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 140 600 mJ V 120 580 110 V(BR)DSS570 100 560 550 90 540 80 530 70 520 60 510 50 500 40 490 30 480 20 470 10 0 460 450 20 40 60 80 100 120 °C 160 Tj -60 -20 20 60 100 °C 160 Tj Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C Semiconductor Group 8 Sep-12-1996 BSP 299 Package outlines SOT-223 Dimensions in mm Semiconductor Group 9 Sep-12-1996