BSP372NH6327

BSP372N OptiMOS™ Small-Signal-Transistor Product Summary Features VDS • N-channel RDS(on),max • Enhancement mode • Logic Level (4.5V rated) 100 V VGS=10 V 0.23 W VGS=4.5 V 0.27 ID 1.8 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT223 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Marking Halogen-Free Packing BSP372N SOT223 H6327: 1000 pcs/ reel BSP372N Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 1.8 T A=70 °C 1.5 Unit A Pulsed drain current I D,pulse T A=25 °C 7.2 Avalanche energy, single pulse E AS I D=1.8 A, R GS=25 W 33 mJ Reverse diode dv /dt dv /dt I D=1.8 A, V DS=80 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS Power dissipation1) P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature V 1.8 W -55 ... 150 °C 0 (2|I D|R DS(on)max, I D=1.5 A S 1) Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain connection. PCB is vertical in still air. Rev 2.0 page 2 2013-04-03 BSP372N Parameter Values Symbol Conditions Unit min. typ. max. - 247 329 - 40 54 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 19 28 Turn-on delay time t d(on) - 5.1 7.7 Rise time tr - 6.7 10.1 Turn-off delay time t d(off) - 47.3 71.0 Fall time tf - 18 27 Gate to source charge Q gs - 0.6 0.9 Gate to drain charge Q gd - 3.0 4.5 Gate charge total Qg - 9.5 14.3 Gate plateau voltage V plateau - 2.3 - V - - 1.8 A - - 7.2 - 0.82 1.1 V - 38 57 ns - 51.5 77.3 nC V GS=0 V, V DS=25 V, f =1 MHz V DD=50 V, V GS=10 V, I D=1.8 A, R G,ext=6 W pF ns Gate Charge Characteristics V DD=50 V, I D=1.8 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev 2.0 T A=25 °C V GS=0 V, I F=1.8 A, T j=25 °C V R=50 V, I F=1.8 A, di F/dt =100 A/µs page 3 2013-04-03 BSP372N 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 2 2 1.5 1.5 ID [A] Ptot [W] 1 Power dissipation 1 0.5 1 0.5 0 0 0 40 80 120 160 0 40 80 TA [°C] 120 160 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 102 1 µs 10 µs 100 µs 1 ms 100 0.5 ZthJA [K/W] ID [A] 10 ms 10-1 DC 0.2 101 0.1 0.05 10-2 0.02 0.01 single pulse 10-3 100 10-1 100 101 102 103 VDS [V] Rev 2.0 10-4 10-3 10-2 10-1 100 101 102 tp [s] page 4 2013-04-03 BSP372N 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 800 10 V 5V 700 3V 6 2.8 V 600 2.5 V 5 RDS(on) [mW] 500 ID [A] 4 400 3 2.5 V 300 3V 2 200 4V 10 V 1 100 2V 0 0 0 2 4 6 0 1 2 3 VDS [V] 4 5 6 7 5 6 7 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 7 10 150 °C 25 °C 9 6 8 5 7 6 ID [A] gfs [S] 4 3 5 4 3 2 2 1 1 0 0 0 1 2 3 4 VGS [V] Rev 2.0 0 1 2 3 4 ID [A] page 5 2013-04-03 BSP372N 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=1.8 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=218 µA parameter: I D 600 2.5 500 2 1.5 VGS(th) [V] RDS(on) [mW] 400 300 max max typ 1 200 typ min 0.5 100 0 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj [°C] Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 103 101 25 °C Ciss 150 °C 102 150 °C, 98% 100 IF [A] C [pF] 25 °C, 98% Coss Crss 101 10-1 100 10-2 0 10 20 30 40 50 60 70 80 90 100 VDS [V] Rev 2.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD [V] page 6 2013-04-03 BSP372N 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=1.8 A pulsed parameter: T j(start) parameter: V DD 101 10 50 V 9 80 V 20 V 8 7 100 °C 25 °C VGS [V] IAV [A] 6 125 °C 100 5 4 3 2 1 0 10-1 100 101 102 0 103 1 2 3 4 5 6 7 8 9 10 Qgate [nC] tAV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 µA 120 V GS 116 Qg 112 VBR(DSS) [V] 108 104 100 V gs(th) 96 92 88 Q g(th) Q sw 84 Q gs 80 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev 2.0 page 7 2013-04-03 BSP372N SOT223 Package Outline: Footprint: Packaging: Dimensions in mm Rev 2.0 page 8 2013-04-03 BSP372N Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.0 page 9 2013-04-03