BSS84PW

BSS84PW SIPMOS ® Small-Signal-Transistor Features Product Summary · P-Channel Drain source voltage VDS Drain-source on-state resistance RDS(on) Continuous drain current ID · Enhancement mode · Avalanche rated · Logic Level -60 V 8 W -0.15 A 3 · dv/dt rated 2 • Qualified according to AEC Q101 1 • Halogen-free according to IEC61249-2-21 Type Package Tape and Reel BSS84PW PG-SOT-323 L6327:3000pcs/r. Marking YBs VSO05561 Pin 1 PIN 2 PIN 3 G S D Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current -0.15 A ID T A = 25 °C Pulsed drain current ID puls -0.6 EAS 2.61 Avalanche energy, periodic limited by Tjmax EAR 0.03 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 0.3 W -55...+150 °C T A = 25 °C Avalanche energy, single pulse mJ I D = -0.15 A , V DD = -25 V, RGS = 25 W kV/μs I S = -0.15 A, V DS = -48 V, di/dt = 200 A/μs, T jmax = 150 °C T A = 25 °C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 Rev 1.4 55/150/56 Page 1 2011-07-13 BSS84PW Thermal Characteristics Symbol Parameter Values Unit min. typ. max. - - 110 @ min. footprint - - 420 @ 6 cm 2 cooling area 1) - - 350 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 3) SMD version, device on PCB: RthJA Electrical Characteristics, at T j = 25 °C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)DSS -60 - - VGS(th) -1 -1.5 -2 Static Characteristics Drain-source breakdown voltage V VGS = 0 V, I D = -250 μA Gate threshold voltage, VGS = VDS I D = -20 μA Zero gate voltage drain current μA IDSS VDS = -60 V, V GS = 0 V, T j = 25 °C - -0.1 -1 VDS = -60 V, V GS = 0 V, T j = 125 °C - -10 -100 IGSS - -10 -100 nA RDS(on) - 10.5 25 W RDS(on) - 6.9 12 RDS(on) - 4.6 8 Gate-source leakage current VGS = -20 V, VDS = 0 V Drain-source on-state resistance VGS = -2.7 V, I D = -0.01 A Drain-source on-state resistance VGS = -4.5 V, I D = -0.12 A Drain-source on-state resistance VGS = -10 V, ID = -0.15 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain connection. PCB is vertical without blown air. Rev 1.4 Page 2 2011-07-13 BSS84PW Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.08 0.16 - S pF Dynamic Characteristics Transconductance g fs V DS£2*ID*R DS(on)max , ID=0.15A Input capacitance Ciss V GS=0V, VDS=-25V, - 15.3 19.1 Output capacitance Coss f=1MHz - 5.8 7.3 Reverse transfer capacitance Crss - 3 3.8 Turn-on delay time t d(on) V DD=-30V, V GS=-4.5V, - 6.7 10 Rise time tr ID=-0.12A, RG=25W - 16.2 24.3 Turn-off delay time t d(off) - 8.6 12.9 Fall time tf - 20.5 30.8 - 0.25 0.38 - 0.3 0.45 - 1 1.5 V(plateau) V DD=-48V, ID=-0.15A - -3.4 - IS - - -0.15 A - - -0.6 ns Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg V DD=-48V, I D=-0.15A V DD=-48V, I D=-0.15A, nC V GS=0 to -10V Gate plateau voltage V Reverse Diode Inverse diode continuous T A=25°C forward current Inverse diode direct current, I SM pulsed Inverse diode forward voltage VSD V GS=0V, IF=-0.15A - -0.84 -1.12 V Reverse recovery time t rr V R=-30V, I F=l S, - 23.6 35.4 ns Reverse recovery charge Q rr di F/dt=100A/μs - 11.6 17.4 nC Rev 1.4 Page 3 2011-07-13 BSS84PW Power Dissipation Drain current Ptot = f (TA) ID = f (TA ) parameter: VGS ³ 10 V BSS84PW 0.32 -0.16 W A 0.24 -0.12 0.20 -0.10 ID Ptot BSS84PW 0.16 -0.08 0.12 -0.06 0.08 -0.04 0.04 -0.02 0.00 0 20 40 60 80 100 120 °C 0.00 0 160 20 40 60 80 100 °C 120 TA TA Safe operating area Transient thermal impedance I D = f ( V DS ) ZthJA = f (tp ) parameter : D = 0 , T A = 25 °C parameter : D = tp /T -10 160 1 BSS84PW 10 3 BSS84PW A K/W -10 0 Z thJC tp = 40.0μs 100 μs ID /I D -10 -1 R ( DS on ) = VD 1 ms S 10 2 10 ms D = 0.50 0.20 10 1 0.10 0.05 -10 -2 0.02 single pulse DC -10 -3 -1 -10 -10 0 -10 1 V -10 2 VDS Rev 1.4 10 0 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 0.01 10 1 s 10 3 tp Page 4 2011-07-13 BSS84PW Typ. output characteristic Typ. drain-source-on-resistance I D = f (VDS); T j=25°C parameter: tp = 80 μs RDS(on) = f (ID ) parameter: VGS BSS84PW BSS84PW 26 Ptot = 0W A g f W VGS [V] a -2.5 e -0.28 d ID -0.24 -0.20 -0.16 b -3.0 c -3.5 d -4.0 e -4.5 f -5.0 g -6.0 a b c d 22 20 RDS(on) -0.36 18 16 14 12 c 10 -0.12 8 6 b -0.08 4 -0.04 2 a 0.00 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V e g VGS [V] = a b c d e f -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 g -6.0 0 0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24 A -5.0 f VDS -0.30 ID Typ. transfer characteristics I D= f ( V GS ) Typ. forward transconductance VDS³ 2 x I D x RDS(on)max gfs = f(ID ); Tj=25°C parameter: tp = 80 μs parameter: gfs -0.30 0.22 S A 0.18 gfs ID 0.16 -0.20 0.14 0.12 -0.15 0.10 0.08 -0.10 0.06 0.04 -0.05 0.02 0.00 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 Rev 1.4 V -5.0 VGS Page 5 0.00 0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 A -0.40 ID 2011-07-13 BSS84PW Drain-source on-resistance Gate threshold voltage RDS(on) = f(Tj) VGS(th) = f (Tj) parameter: ID = -0.17A, V GS = -10 V parameter: VGS = VDS , ID = -20 μA -2.5 16 W 12 V GS(th) RDS(on) V max. 10 max. -1.5 typ. -1.0 min. 8 6 typ. 4 -0.5 2 0 -60 -20 20 60 100 0.0 -60 160 °C Tj -20 20 60 °C 100 180 Tj Typ. capacitances Forward characteristics of reverse diode C = f(VDS) IF = f (VSD ) Parameter: VGS=0 V, f=1 MHz parameter: Tj , tp = 80 μs 10 2 -10 0 BSS84PW A pF -10 -1 C IF Ciss 10 1 Coss Crss -10 -2 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 -5 -10 -15 -20 V -30 VDS Rev 1.4 -10 -3 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD Page 6 2011-07-13 BSS84PW Avalanche energy Typ. gate charge EAS = f (Tj) VGS = f (QGate ) parameter: ID = -0.15 A pulsed W par.: ID = -0.15 A , VDD = -25 V, R GS = 25 BSS84PW 3.0 -16 V mJ 2.0 VGS E AS -12 1.5 -10 0,2 VDS max 0,8 VDS max -8 -6 1.0 -4 0.5 -2 0.0 25 45 65 85 105 °C 125 165 Tj 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 nC 1.5 Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) BSS84PW -72 V(BR)DSS V -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 °C 180 Tj Rev 1.4 Page 7 2011-07-13 BSS84PW Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.4 Page 3 2011-07-13