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FS950R08A6P2LBBPSA1

FS950R08A6P2LBBPSA1

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    模块

  • 描述:

    IGBT 模块 沟槽型场截止 3 个独立式 750 V 450 A 870 W 底座安装 AG-HYBRIDD-2

  • 数据手册
  • 价格&库存
FS950R08A6P2LBBPSA1 数据手册
HybridPACK™DriveModule FS950R08A6P2LB FinalDataSheet V3.0,2020-03-23 AutomotiveHighPower FS950R08A6P2LB HybridPACK™DriveModule 1Features/Description HybridPACK™DrivemodulewithEDT2IGBTandDiode T T T VCES = 750 V IC = 950 A Typical Applications •Automotive Applications •Hybrid Electrical Vehicles (H)EV •Motor Drives •Commercial Agriculture Vehicles Description The HybridPACKTM Drive is a very compact six-pack module (750V/950A) optimized for hybrid and electric vehicles. The power module implements the new EDT2 IGBT generation, which is an automotive Micro-Pattern Trench-Field-Stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz. Electrical Features •Blocking voltage 750V •Low VCEsat •Low Switching Losses •Low Qg and Crss •Low Inductive Design •Tvj op = 150°C •Short-time extended Operation Temperature Tvj op = 175°C The new HybridPACKTM Drive power module family comes with mechanical guiding elements supporting easy assembly processes for customers. Furthermore, the press-fit pins for the signal terminals avoid additional time consuming selective solder processes, which provides cost savings on system level and increases system reliability. The direct cooled baseplate with PinFin structure and optimized ceramic material in the FS950R08A6P2LB product best utilizes the implemented chipset and shows superior thermal characteristics. Due to the high clearance & creepage distances, the module family is also well suited for increased system working voltages and supports modular inverter approaches. Mechanical Features •4.2kV DC 1sec Insulation •High Creepage and Clearance Distances •Compact design •High Power Density •Direct Cooled PinFin Base Plate •Guiding elements for PCB and cooler assembly •Integrated NTC temperature sensor •PressFIT Contact Technology •RoHS compliant •UL 94 V0 module frame Product Name Ordering Code FS950R08A6P2LB SP002290988 Final Data Sheet 2 V3.0,2020-03-23 FS950R08A6P2LB HybridPACK™ Drive Module 2 IGBT,Inverter 2.1 Maximum Rated Values Parameter Conditions Symbol Value Unit Collector-emitter voltage Tvj = 25°C VCES 750 V ICN 950 A Continuous DC collector current TF = 95°C, Tvj max = 175°C IC nom 4501) A Repetitive peak collector current tP = 1 ms ICRM 1900 A Total power dissipation TF = 75°C, Tvj max = 175°C Ptot 8701) W VGES +/-20 V Implemented collector current Gate-emitter peak voltage 2.2 Characteristic Values min. typ. max. 1.10 1.15 1.15 1.35 IC = 450 A, VGE = 15 V IC = 450 A, VGE = 15 V IC = 450 A, VGE = 15 V Tvj = 25°C Tvj = 150°C Tvj = 175°C IC = 950 A, VGE = 15 V IC = 950 A, VGE = 15 V Tvj = 25°C Tvj = 175°C Gate threshold voltage IC = 9.60 mA, VCE = VGE Tvj = 25°C Tvj = 175°C VGEth Gate charge VGE = -8 V ... 15 V, VCE = 400V QG 4.40 µC Tvj = 25°C RGint 0.7 Ω Collector-emitter saturation voltage Internal gate resistor VCE sat V 1.35 1.55 4.90 5.80 4,10 6.50 V Input capacitance f = 1 MHz, VCE = 50 V, VGE = 0 V Tvj = 25°C Cies 80.0 nF Output capacitance f = 1 MHz, VCE = 50 V, VGE = 0 V Tvj = 25°C Coes 1.00 nF Reverse transfer capacitance f = 1 MHz, VCE = 50 V, VGE = 0 V Tvj = 25°C Cres 0.30 Collector-emitter cut-off current VCE = 750 V, VGE = 0 V VCE = 750 V, VGE = 0 V Tvj = 25°C Tvj = 175°C ICES Gate-emitter leakage current VCE = 0 V, VGE = 20 V Tvj = 25°C IGES Turn-on delay time, inductive load IC = 450 A, VCE = 400 V VGE = -8 V / +15 V RGon = 2.4 Ω Tvj = 25°C Tvj = 150°C Tvj = 175°C IC = 450 A, VCE = 400 V VGE = -8 V / +15 V RGon = 2.4 Ω Rise time, inductive load Turn-off delay time, inductive load Fall time, inductive load Turn-on energy loss per pulse Turn-off energy loss per pulse nA µs Tvj = 25°C Tvj = 150°C Tvj = 175°C tr 0.07 0.08 0.08 µs IC = 450 A, VCE = 400 V VGE = -8 V / +15 V RGoff = 5.1 Ω Tvj = 25°C Tvj = 150°C Tvj = 175°C td off 0.94 1.05 1.05 µs IC = 450 A, VCE = 400 V VGE = -8 V / +15 V RGoff = 5.1 Ω Tvj = 25°C Tvj = 150°C Tvj = 175°C tf 0.04 0.05 0.06 µs IC = 450 A, VCE = 400 V, LS = 20 nH VGE = -8 V / +15 V RGon = 2.4 Ω di/dt (Tvj 25°C) = 5500 A/µs di/dt (Tvj 150°C) = 5000 A/µs Tvj = 25°C Tvj = 150°C Tvj = 175°C IC = 450 A, VCE = 400 V, LS = 20 nH VGE = -8 V / +15 V RGoff = 5.1 Ω dv/dt (Tvj 25°C) = 3100 V/µs dv/dt (Tvj 150°C) = 2500 V/µs Tvj = 25°C Tvj = 150°C Tvj = 175°C tP ≤ 6 µs, Tvj = 25°C tP ≤ 3 µs, Tvj = 175°C Eon 13.5 17.5 18.0 mJ Eoff 23.5 29.0 30.0 mJ Thermal resistance, junction to cooling fluid per IGBT; ∆V/∆t = 10 dm³/min, TF = 75°C RthJF Temperature under switching conditions top continuous for 10s within a period of 30s, occurence maximum 3000 times over lifetime Tvj op 3) 400 mA td on VGE ≤ 15 V, VCC = 400 V VCEmax = VCES -LsCE ·di/dt 2) 5 0.28 0.29 0.30 SC data 1) nF 1.0 4800 3900 ISC A 0.1002) 0.1152) K/W -40 150 1503) 175 °C Verified by characterization / design not by test. Cooler design and flow direction according to application note AN-HPDPERF-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol. For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C. Final Data Sheet 3 V3.0, 2020-03-23 FS950R08A6P2LB HybridPACK™ Drive Module 3 Diode, Inverter 3.1 Maximum Rated Values Parameter Conditions Symbol Value Unit Repetitive peak reverse voltage Tvj = 25°C VRRM 750 V Implemented forward current IFN 950 A Continuous DC forward current IF 4501) A Repetitive peak forward current tP = 1 ms I²t - value VR = 0 V, tP = 10 ms, Tvj = 150°C VR = 0 V, tP = 10 ms, Tvj = 175°C 3.2 IFRM 1900 A I²t 19000 16000 A²s A²s Characteristic Values Forward voltage Peak reverse recovery current Recovered charge Reverse recovery energy min. max. 1.65 Tvj = 25°C Tvj = 150°C Tvj = 175°C IF = 950 A, VGE = 0 V IF = 950 A, VGE = 0 V Tvj = 25°C Tvj = 175°C IF = 450 A, - diF/dt = 5000 A/µs (Tvj = 150°C) VR = 400 V VGE = -8 V Tvj = 25°C Tvj = 150°C Tvj = 175°C IRM 250 350 370 A IF = 450 A, - diF/dt = 5000 A/µs (Tvj = 150°C) VR = 400 V VGE = -8 V Tvj = 25°C Tvj = 150°C Tvj = 175°C Qr 20.0 40.0 45.0 µC IF = 450 A, - diF/dt = 5000 A/µs (Tvj = 150°C) VR = 400 V VGE = -8 V Tvj = 25°C Tvj = 150°C Tvj = 175°C Erec 7.00 13.0 15.0 mJ VF V 1.80 1.70 Thermal resistance, junction to cooling fluid per diode; ∆V/∆t = 10 dm³/min, TF = 75°C RthJF Temperature under switching conditions top continuous for 10s within a period of 30s, occurence maximum 3000 times over lifetime Tvj op 4 typ. 1.44 1.31 1.27 IF = 450 A, VGE = 0 V IF = 450 A, VGE = 0 V IF = 450 A, VGE = 0 V NTC-Thermistor 0.1402) 0.1602) K/W 1503) 175 -40 150 min. typ. °C max. Parameter Conditions Symbol Value Unit Rated resistance TC = 25°C R25 5.00 kΩ Deviation of R100 TC = 100°C, R100 = 493 Ω Power dissipation TC = 25°C B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K ∆R/R -5 P25 5 % 20.0 mW Specification according to the valid application note. 1) 2) 3) Verified by characterization / design not by test. Cooler design and flow direction according to application note AN-HPDPERF-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol. For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C. Final Data Sheet 4 V3.0, 2020-03-23 FS950R08A6P2LB HybridPACK™ Drive Module 5 Module Parameter Conditions Symbol Value Unit Isolation test voltage RMS, f = 0 Hz, t = 1 sec VISOL 4.2 kV Maximum RMS module terminal current TF = 75°C, TCt = 105°C ItRMS 500 A Cu+Ni1) Material of module baseplate Si3N4 Internal isolation basic insulation (class 1, IEC 61140) Creepage distance terminal to heatsink terminal to terminal dCreep 9.0 9.0 mm Clearance terminal to heatsink terminal to terminal dClear 4.5 4.5 mm CTI Comperative tracking index min. Pressure drop in cooling circuit Maximum pressure in cooling circuit ∆V/∆t = 10.0 dm³/min; TF = 75°C Tbaseplate < 40°C Tbaseplate > 40°C (relative pressure) Tstg Screw M4 baseplate to heatsink 1) 2) 3) M nH 0.75 -40 1.80 G Weight bar 8.0 RCC'+EE' TF = 25 °C, per switch mbar 2.5 2.0 LsCE Storage temperature Mounting torque for modul mounting 642) p Stray inductance module Module lead resistance, terminals - chip ∆p > 200 typ. max. mΩ 125 2.00 2.20 720 3) °C Nm g Ni plated Cu baseplate. Cooler design and flow direction according to application note AN-HPDPERF-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol. According to application note AN-HPDPERF-ASSEMBLY. Final Data Sheet 5 V3.0, 2020-03-23 FS950R08A6P2LB HybridPACK™ Drive Module 6 Characteristics Diagrams output characteristic IGBT,Inverter (typical) IC = f (VCE) VGE = 15 V output characteristic IGBT,Inverter (typical) IC = f (VCE) Tvj = 150°C 1800 1800 Tvj = 25°C Tvj = 150°C Tvj = 175°C 1600 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 1600 1200 1200 1000 1000 IC [A] 1400 IC [A] 1400 800 800 600 600 400 400 200 200 0 0 0,0 0,4 0,8 1,2 VCE [V] 1,6 2,0 2,4 transfer characteristic IGBT,Inverter (typical) IC = f (VGE) VCE = 20 V 0,0 0,4 0,8 1,2 1,6 2,0 2,4 VCE [V] 2,8 3,2 3,6 4,0 800 900 switching losses IGBT,Inverter (typical) Eon = f (IC), Eoff = f (IC), VGE = +15 V / -8 V, RGon = 2.4 Ω, RGoff = 5.1 Ω, VCE = 400 V 1800 70 Tvj = 25°C Tvj = 150°C Tvj = 175°C 1600 Eon, Tvj = 150°C Eoff, Tvj = 150°C Eon, Tvj = 175°C Eoff, Tvj = 175°C 60 1400 50 1200 40 IC [A] E [mJ] 1000 800 30 600 20 400 10 200 0 0 5 Final Data Sheet 6 7 8 9 VGE [V] 10 11 12 13 0 6 100 200 300 400 500 IC [A] 600 700 V3.0, 2020-03-23 FS950R08A6P2LB HybridPACK™ Drive Module switching losses IGBT,Inverter (typical) Eon = f (RG), Eoff = f (RG), VGE = +15V / -8V, IC = 450 A, VCE = 400 V transient thermal impedance IGBT,Inverter ZthJF = f (t), ∆V/∆t = 10 dm³/min; 50% water / 50% ethylenglycol Tf = 75°C; cooler design according to AN-HPDPERF-ASSEMBLY 140 1 Eon, Tvj = 150°C Eoff, Tvj = 150°C Eon, Tvj = 175°C Eoff, Tvj = 175°C 120 ZthJF : IGBT 100 0,1 E [mJ] ZthJF [K/W] 80 60 0,01 40 20 i: 1 2 3 4 ri[K/W]: 0,007 0,038 0,05 0,02 τi[s]: 0,001 0,03 0,25 1,5 0 0 2 4 6 8 10 12 14 RG [Ω] 16 18 20 22 0,001 0,001 24 reverse bias safe operating area IGBT,Inverter (RBSOA) IC = f (VCE) VGE = +15V / -8V, RGoff = 5,1 Ω, Tvj = 175°C 0,01 0,1 t [s] 1 10 thermal impedance IGBT,Inverter RthJF = f (∆V/∆t), Tf = 75°C; 50% water / 50% ethylenglycol cooler design according to AN-HPDPERF-ASSEMBLY 2000 0,129 RthJF: IGBT 1900 1800 0,127 1700 1600 0,125 1500 1400 0,123 1300 0,121 RthJF [K/W] 1200 IC [A] 1100 1000 900 800 0,119 0,117 700 600 0,115 500 400 0,113 IC, Modul IC, Chip 300 200 0,111 100 0 0,109 0 Final Data Sheet 100 200 300 400 500 VCE [V] 600 700 800 4 7 5 6 7 8 9 10 ∆V/∆t [dm³/min] 11 12 13 14 V3.0, 2020-03-23 FS950R08A6P2LB HybridPACK™ Drive Module capacity characteristic IGBT,Inverter (typical) C = f(VCE) VGE = 0 V, Tvj = 25°C, f = 1MHz gate charge characteristic IGBT,Inverter (typical) VGE = f(QG) VCE = 400 V, IC = 450 A, Tvj = 25°C 100 15 QG Cies Coes Cres 12 9 10 C [nF] VGE [V] 6 3 0 1 -3 -6 0,1 -9 0 100 200 300 400 500 0 1 2 VCE [V] maximum allowed collector-emitter voltage VCES = f(Tvj), verified by characterization / design not by test ICES = 1 mA for Tvj ≤ 25°C; ICES = 30 mA for Tvj > 25°C 3 4 5 QG [µC] forward characteristic of Diode, Inverter (typical) IF = f (VF) 800 1800 VCES Tvj = 25°C Tvj = 150°C Tvj = 175°C 1600 775 1400 1200 1000 IF [A] VCES [V] 750 725 800 700 600 400 675 200 650 -50 Final Data Sheet 0 -25 0 25 50 75 100 125 150 175 200 Tvj [°C] 0,0 8 0,4 0,8 1,2 VF [V] 1,6 2,0 2,4 V3.0, 2020-03-23 FS950R08A6P2LB HybridPACK™ Drive Module switching losses Diode, Inverter (typical) Erec = f (IF), RGon = 2.4 Ω, VCE = 400 V switching losses Diode, Inverter (typical) Erec = f (RG), IF = 450 A, VCE = 400 V 22 20 Erec, Tvj = 150°C Erec, Tvj = 175°C 20 Erec, Tvj = 150°C Erec, Tvj = 175°C 18 18 16 16 14 14 E [mJ] E [mJ] 12 12 10 10 8 8 6 6 4 4 2 2 0 0 0 100 200 300 400 500 IF [A] 600 700 800 900 transient thermal impedance Diode, Inverter ZthJF = f (t), ∆V/∆t = 10 dm³/min; 50% water / 50% ethylenglycol Tf = 75°C; cooler design according to AN-HPDPERF-ASSEMBLY 0 2 4 6 8 10 12 14 RG [Ω] 16 18 20 22 24 thermal impedance Diode, Inverter RthJF = f (∆V/∆t), Tf = 75°C; 50% water / 50% ethylenglycol cooler design according to AN-HPDPERF-ASSEMBLY 1 0,174 ZthJC : Diode RthJF: Diode 0,172 0,170 0,168 ZthJC [K/W] RthJF [K/W] 0,1 0,01 0,166 0,164 0,162 0,160 i: 1 2 3 4 ri[K/W]: 0,015 0,07 0,055 0,02 τi[s]: 0,001 0,03 0,25 1,5 0,001 0,001 Final Data Sheet 0,158 0,156 0,01 0,1 t [s] 1 10 4 9 5 6 7 8 9 10 ∆V/∆t [dm³/min] 11 12 13 14 V3.0, 2020-03-23 FS950R08A6P2LB HybridPACK™ Drive Module NTC-Thermistor-temperature characteristic (typical) R = f (T) pressure drop in cooling circuit ∆p = f (∆V/∆t), Tf = 75°C; 50% water / 50% ethylenglycol cooler design according to AN-HPDPERF-ASSEMBLY 100000 120 ∆p: Modul Rtyp 100 80 R[Ω] ∆p [mbar] 10000 1000 60 40 20 100 -40 Final Data Sheet 0 -20 0 20 40 60 80 TC [°C] 100 120 140 160 4 10 5 6 7 8 9 10 ∆V/∆t [dm³/min] 11 12 13 14 V3.0, 2020-03-23 FS950R08A6P2LB HybridPACK™ Drive Module 7 Circuit diagram P1 P2 P3 T1 C1 C3 C5 T T2 G1 G3 G5 E1 E3 E5 U C2 T3 V C4 W T C6 T4 G2 G4 G6 E2 E4 E6 T5 T T6 N1 Final Data Sheet N2 N3 11 V3.0, 2020-03-23 FS950R08A6P2LB HybridPACK™ Drive Module Y X 122 127±0,4 128,25±0,4 107,3 88,3 74,67 60,3 16±0,2 N2 P1 6x 6x P2 N3 j P3 E6 G6 ( 11 9 ,5 T1 T2 G1 E1 66,5±0,5 53 T3 ) 82 87±0,4 90,75±0,4 G3 E3 n5,5±0,1 3x 14±0,2 H j I 0,6 H I A 1,2 D E 3x(U;V;W) 125,25 122 102,3 (87) 74,65 81,8 27,35 34,8 0 4 8,05 12,2 23,25 B 98 102,05 74,67 27,33 55,3 3x 0 8,3 20 0 C E 3x 114,25 120,25±0,4 S 0 8x 12,8±0,2 W V 3x reference plane 22.000 7,6±0,4 C5 82 U 1±0,15 X-Y ( 1 : 1 ) 8x 9,3±0,2 D2 L Y D1 0 8 A c 0,3 CZ 6x common zones D1-D2 D2-D3 D3-D4 D8-D7 D7-D6 D6-D5 T6 G5 E5 C3 32±0,2 C T5 T4 C1 A DE BC 4,3±0,15 60 -0,2 6,35±0,5 A (43, 3 05 °) C6 n1,6 8x E4 G4 C4 n0,5 8x 0 E2 G2 C2 4±0,3 6x(N1-N3;P1-P3) G n5,5±0,1 D 15,5±0,5 N1 D3 N2 P1 P2 D4 N3 P3 8x n0,8 L M A j n1,6 B C M X 18,85 dimensioned for EJOT Delta PT WN5451 30 x C2 E2 G2 J C4 E4 G4 C6 E6 G6 axis generated by K origin C2;E2;G2;C4;E4;G4;C6;E6;G6 Z R j n ** n ** T6 G3 E3 A 10,25 6,2 0 KJ BC G5 E5 C3 D7 21,95 23,35 27,35 36,75 40,8 U 23,25 Drawing: W00170332_00 general toler surface 1. DIN DIN EN ISO DIN ISO 13715 16742-TG4 1302 2. DIN ISO 2768-mK All dimensions refer to module in delivery condition Z ( 1,5 : 1 ) edges T5 C1 D8 (19,75) T3 T4 V T C5 D6 W D5 C 115,95 117,35 125,25 G1 E1 T1 T2 68,95 70,35 74,65 83,75 87 87,8 51,85 59,35 67,15 69,85 74,1 82 3,94±0,5 refers to lokal CZ Areas R,S or T Final Data Sheet 41,3 27,33 13,3 5,7 0 N1 6x n0,6 F G A n1,2 D E n4,5±0,15 8,5±0,3 B j 14±0,2 D 22,25±0,4 16,25 9,75±0,4 5±0,4 0 1±0,15 0 26,25±0,4 25±0,4 20 F Ø5,3±0,15{ B 51 55,05 6x 10,1±0,4 7,6±0,4 0 Package outlines 26±0,3 8 24x C2 E2 G2 ** Pin position checked with pin gauge according to Application Note AN-HPD_ASSEMBLY 12 V3.0, 2020-03-23 FS950R08A6P2LB HybridPACK™ Drive Module 9 Label Codes 9.1 Module Code Code Format Data Matrix Encoding ASCII Text Symbol Size 16x16 Standard IEC24720 and IEC16022 Code Content Content Module Serial Number Module Material Number Production Order Number Datecode (Production Year) Datecode (Production Week) Digit 1-5 6 - 11 12 - 19 20 - 21 22 - 23 Example (below) 71549 142846 55054991 15 30 Example 71549142846550549911530 9.2 Packing Code Code Format Code128 Encoding Code Set A Symbol Size 34 digits Standard IEC8859-1 Code Content Content Backend Construction Number Production Lot Number Serial Number Date Code Box Quantity Identifier X 1T S 9D Q Digit 2-9 12 - 19 21 - 25 28 - 31 33 - 34 Example (below) 95056609 2X0003E0 754389 1139 15 Example X950566091T2X0003E0S754389D1139Q15 Final Data Sheet 13 V3.0, 2020-03-23 FS950R08A6P2LB HybridPACK™ Drive Module Revision History Major changes since previous revision Revision History Reference Date Description V3.0 2020-03-23 Final datasheet Final Data Sheet 14 V3.0, 2020-03-23 FS950R08A6P2LB HybridPACK™ Drive Module Terms & Conditions of usage Edition 2018-08-01 Published by Infineon Technologies AG 81726 Munich, Germany © 2018 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (http://www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. These components are not designed for “special applications” that demand extremely high reliability or safety such as aerospace, defense or life support devices or systems (Class III medical devices). If you intend to use the components in any of these special applications, please contact your local representative at International Rectifier HiRel Products, Inc. or the Infineon support (https://www.infineon.com/support) to review product requirements and reliability testing. Infineon Technologies components may be used in special applications only with the express written approval of Infineon Technologies. Class III medical devices are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Trademarks Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last update Final Data Sheet 2011-11-11 15 V3.0, 2020-03-23 www.infineon.com Published by Infineon Technologies AG
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