HFB20HJ20C

PD - 94169A HFB20HJ20C HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount IF(AV) = 20A trr = 20ns Description TM HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. Absolute Maximum Ratings Parameter VR IF(AV) IFSM PD @ TC = 25°C TJ, TSTG Cathode to Anode Voltage ( Per Leg ) Continuous Forward Current, Q TC = 85°C Single Pulse Forward Current, R TC = 25°C ( Per Leg) Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. Units 200 20 125 28 -55 to +150 V A W °C Note: Q D.C. = 50% rect. wave R 1/2 sine wave, 60 Hz , P.W. = 8.33 ms CASE STYLE (ISOLATED BASE) ANODE COMMON CATHODE ANODE SMD-0.5 www.irf.com 1 5/08/01 HFB20HJ20C Electrical Characteristics ( Per Leg ) @ TJ = 25°C (unless otherwise specified) Parameter VBR Cathode Anode Breakdown Voltage VF Min. Typ. Max. Units V Test Conditions 200 — — IR = 100µA Forward Voltage — — 1.26 See Fig. 1 — — 1.11 — — 1.30 IF = 20A, TJ = 25°C — — 0.96 IF = 10A, TJ = 125°C IF = 10A, TJ = -55°C V IF = 10A, TJ = 25°C See Fig. 2 IR Reverse Leakage Current See Fig. 2 — — — — 10 1.0 µA mA VR = VR Rated VR = VR Rated, TJ = 125°C CT Junction Capacitance, See Fig. 3 — — 20 pF VR = 200V LS Series Inductance — 4.8 — nH Measured from center of cathode pad to center of anode pad Dynamic Recovery Characteristics ( Per Leg )@ TJ = 25°C (unless otherwise specified) Parameter t rr trr1 trr2 IRRM1 IRRM2 Q rr1 Q rr2 di(rec)M/dt1 di(rec)M/dt2 Min. Reverse Recovery Time Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge Peak Rate of Fall of Recovery Current During tb — — — — — — — — — Typ. Max. Units — 27 42 3.5 5.5 54 120 640 850 20 — — — — — — — — Test Conditions ns ns IF = 1.0A,VR = 30V, dif/dt = 200A/µs TJ = 25°C See Fig. TJ = 125°C 5 IF = 20A TJ = 25°C See Fig. A A TJ = 125°C 6 VR = 160V TJ = 25°C See Fig. nC TJ = 125°C 7 dif/dt = 200A/µs nC TJ = 25°C See Fig. A/µs 8 A/µs TJ = 125°C Thermal - Mechanical Characteristics Parameter RthJC Wt 2 Junction-to-Case, Single Leg Conducting Weight Typ. Max. Units — 1.0 4.5 — °C/W g www.irf.com HFB20HJ20C 100 100 125°C Reverse Current - I R (µA) 100°C 1 75°C 0.1 25°C 0.01 0.001 0.0001 1E-005 0 50 100 150 200 Reverse Voltage - V R (V) 10 Fig. 2 - Typical Reverse Current Vs. Reverse Voltage ( Per Leg ) 100 Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) 10 Tj = 125°C Tj = 25°C Tj = -55°C T J = 25°C 1 0.0 0.4 0.8 1.2 10 1.6 0 50 Forward Voltage Drop - V F (V) 100 150 200 Reverse Voltage - VR (V) Fig. 1 - Maximum Forward Voltage Drop Vs. Instantaneous Forward Current ( Per Leg ) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage ( Per Leg ) Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10  0.05 0.02 0.01 0.1 0.01 0.00001 P DM  SINGLE PULSE (THERMAL RESPONSE) t1 t2  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics ( Per Leg ) www.irf.com 3 HFB20HJ20C 50 100 IF = 40A 40 IF = 20A IF = 20A 30 20 IRRM - ( A ) trr - ( ns ) IF = 10A IF = 40A IF = 10A 10 VR = 160V VR = 160V TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C 10 1 100 1000 100 1000 dif / dt - ( A / µs ) dif / dt - ( A / µs ) Fig. 5 - Typical Reverse Recovery Vs. dif/dt,( Per Leg) 1000 Fig. 6 -Typical Recovery Current Vs. dif/dt ( Per Leg) 10000 IF = 40A IF = 10A di ( rec )M / dt - ( A / µs ) IF = 20A Qrr - ( nC ) IF = 10A 100 VR = 160V IF = 20A IF = 40A 1000 VR = 160V TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C 10 100 100 1000 dif / dt - ( A / µs ) Fig. 7 - Typical Stored Charge Vs. dif/dt ( Per Leg) 4 100 1000 dif / dt - ( A / µs ) Fig. 8 - Typical di(rec)M/dt Vs. dif/dt ( Per Leg ) www.irf.com HFB20HJ20C 3 t rr IF R E V E R S E R E C O V E R Y C IR C U IT tb ta 0 Q rr V R = 2 00 V 2 I RRM 4 0.5 I R R M di(rec)M /dt 0.01 Ω 0.75 I R R M L = 70µH 1 D .U .T. D d if/d t A D JU S T G 5 IR F P 2 50 S Fig. 9 - Reverse Recovery Parameter Test Circuit di f /dt 1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Case Outline and Dimensions — SMD-0.5 HEXFRED DOUBLE DIE 1 = COMMON CATHODE 2 = ANODE 1 3 = ANODE 2 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/01 www.irf.com 5