ICE2QR4765GXUMA1

ICE2QR4765G Quasi-Resonant, 650V CoolSET™ in DS0-12 Package Product Highlights  Active Burst Mode to reach the lowest standby power requirement 25 V & last for 10 μs (normal mode only) VCC Undervoltage/ Short Optocoupler VVCC < 10.5 V Auto Restart Overload/Open Loop VFB > 4.5 V & last for 30 ms Auto Restart Over Temperature (Controller Junction) TJ > 130 °C Auto Restart Output Overvoltage VZCOVP > 3.7 V & last for 100 μs Latch Short Winding VCSSW > 1.68 V & last for 190 ns Latch In case of open control loop or output over load, the feedback voltage will be pulled up. After a blanking time of tOLP_B (30 ms), the IC enters auto-restart mode. The blanking time here enables the converter to provide a peak power in case the increase in VFB is due to a sudden load increase. This output over load protection is disabled during burst mode. During off-time of the power switch, the voltage at the zero-crossing pin is monitored for output over-voltage detection. If the voltage is higher than the preset threshold VZCOVP, the IC is latched off after the preset blanking time tZCOVP. This latch off mode can only be reset if the VVCC < VVCCPD. If the junction temperature of IC controller exceeds TjCon (130 °C), the IC enters into OTP auto restart mode. This OTP is disabled during burst mode. If the voltage at the current sensing pin is higher than the preset threshold VCSSW during on-time of the power switch, the IC is latched off. This is short-winding protection. The short winding protection is disabled during burst mode. During latch-off protection mode, the VCC voltage drops to VVCCoff (10.5 V) and then the startup cell is activated. The VCC voltage is then charged to VVCCon (18 V). The startup cell is shut down again. This action repeats again and again. There is also a maximum on time limitation implemented inside the CoolSET™ Q1. Once the gate voltage is high and longer than tOnMax, the switch is turned off immediately. Data Sheet 12 Revision 2.3 2017-09-12 Quasi-Resonant, 650V CoolSET™ in DS0-12 Package Electrical Characteristics 4 Note: 4.1 Note: Table 4 Electrical Characteristics All voltages are measured with respect to ground (Pin 12). The voltage levels are valid if other ratings are not violated. Absolute Maximum Ratings Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction of the integrated circuit. For the same reason make sure, that any capacitor that will be connected to pin 11 (VCC) is discharged before assembling the application circuit. Ta=25 ˚C unless otherwise specified. Absolute Maximum Ratings Parameter Symbol Limit Values min. max. Unit Remarks Tj=110 °C Drain Source Voltage VDS - 650 V Switching drain current, pulse width tp limited by Tjmax IS - 1.67 A Pulse drain current, tp limited by Tjmax ID_Plus - 2.32 A Avalanche energy, repetitive tAR limited EAR by max. Tj=150 °C1 - 0.01 mJ Avalanche current, repetitive tAR limited by max. Tj=150 °C1 IAR - 0.5 A VCC Supply Voltage VVCC -0.3 27 V FB Voltage VFB -0.3 5.5 V ZC Voltage VZC -0.3 5.5 V CS Voltage VCS -0.3 5.5 V Maximum current out from ZC pin IZCMAX 3 - mA Junction Temperature Tj -40 150 °C Storage Temperature TS -55 150 °C Thermal Resistance (Junction–Ambient) RthJA - 110 K/W Soldering temperature, wavesoldering only allowed at leads Tsold - 260 ° C 1.6mm (0.063in.) from case for 10s ESD Capability (incl. Drain Pin) VESD - 2 kV Human body model2 Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f According to EIA/JESD22-A114-B (discharging a 100 pF capacitor through a 1.5 kW series resistor Data Sheet 13 Controller & CoolMOS™ 1 2 Revision 2.3 2017-09-12 Quasi-Resonant, 650V CoolSET™ in DS0-12 Package Electrical Characteristics 4.2 Note: Table 5 Operating Range Within the operating range the IC operates as described in the functional description. Operating Range Parameter Symbol Limit Values min. max. Unit VCC Supply Voltage VVCC VVCCoff VVCCOVP V Junction Temperature of Controller TjCon -40 130 °C Junction Temperature of CoolMOS™ TjCoolMOS -40 150 °C 4.3 Characteristics 4.3.1 Supply Section Note: Table 6 Remarks Limited by over temperature protection. The electrical characteristics involve the spread of values within the specified supply voltage and junction temperature range TJ from – 40 °C to 125 °C. Typical values represent the median values, which are related to 25°C. If not otherwise stated, a supply voltage of VCC = 18 V is assumed. Supply Section Parameter Symbol Limit Values min. typ. max. Unit Test Condition Start Up Current IVCCstart - 300 550 μA VVCC =VVCCon -0.2 V VCC Charge Current IVCCcharge1 - 1.22 5 mA VVCC = 0 V IVCCcharge2 0.8 1.1 - mA VVCC = 1 V IVCCcharge3 - 1 - mA VVCC =VVCCon -0.2 V Maximum Input Current of Startup Cell and CoolMOS™ IDrainIn - - 2 mA VVCC =VVCCon -0.2 V Leakage Current of Startup Cell and CoolMOS™ IDrainLeak - 0.2 50 μA VDrain = 600 V at Tj=100 °C Supply Current in normal operation IVCCNM - 1.5 2.3 mA IFB = 0 A Supply Current in Auto Restart Mode with Inactive Gate IVCCAR - 300 - μA IFB = 0 A Supply Current in Latch-off Mode IVCClatch - 300 - μA IFB = 0 A Supply Current in Burst Mode with inactive Gate IVCCburst - 500 950 μA VFB = 2.5 V, exclude the current flowing out from FB pin VCC Turn-On Threshold VVCCon 17.0 18.0 19.0 V VCC Turn-Off Threshold VVCCoff 9.8 10.5 11.2 V VCC Turn-On/Off Hysteresis VVCChys - 7.5 - V Data Sheet 14 Revision 2.3 2017-09-12 Quasi-Resonant, 650V CoolSET™ in DS0-12 Package Electrical Characteristics 4.3.2 Table 7 Internal Voltage Reference Internal Voltage Reference Parameter Symbol Limit Values Trimmed Reference Voltage 4.3.3 Table 8 VREF min. typ. max. 4.80 5.00 5.20 Unit Test Condition V measured at pin FB IFB = 0 Unit Test Condition PWM Section PWM Section Parameter Symbol Limit Values min. typ. max. Feedback Pull-Up Resistor RFB 14 23 33 kΩ PWM-OP Gain GPWM 3.18 3.3 - - Offset for Voltage Ramp VPWM 0.6 0.7 - V 22 30 41 μs Maximum on time in normal operation tOnMax 4.3.4 Table 9 Current Sense Current sense Parameter Symbol Limit Values Unit min. typ. max. Peak current limitation in normal operation VCSth 0.97 1.03 1.09 V Leading Edge Blanking time tLEB 200 330 460 ns Peak Current Limitation in Active Burst VCSB Mode 0.29 0.34 0.39 V 4.3.5 Table 10 Test Condition Soft Start Soft Start Parameter Symbol Limit Values Unit min. typ. max. 8.5 12 - ms t 11 Internal regulation voltage at first step tVSS_S SS1 - 3 - ms - 1.76 - V Internal regulation voltage step at soft VSS_S 1 start - 0.56 - V Soft-Start time Soft-start time step tSS 1 SS_s The parameter is not subjected to production test - verified by design/characterization Data Sheet 15 Test Condition 1 Revision 2.3 2017-09-12 Quasi-Resonant, 650V CoolSET™ in DS0-12 Package Electrical Characteristics 4.3.6 Table 11 Foldback Point Correction Foldback Point Correction Parameter Symbol Limit Values min. typ. Unit Test Condition max. ZC current first step threshold IZC_FS 0.350 0.500 0.621 mA ZC current last step threshold IZC_LS 1.3 1.7 2.2 mA CS threshold minimum VCSMF - 0.66 - V Izc=2.2 mA, VFB=3.8 V Unit Test Condition 4.3.7 Table 12 Digital Zero Crossing Digital Zero Crossing Parameter Symbol Limit Values min. typ. max. Zero crossing threshold voltage VZCCT 50 100 170 mV Ringing suppression threshold VZCRS - 0.7 - V Minimum ringing suppression time tZCRS1 1.62 2.5 4.5 μs VZC > VZCRS Maximum ringing suppression time tZCRS2 - 25 - μs VZC < VZCRS Threshold to set Up/Down Counter to one Threshold for downward counting at low line Threshold for upward counting at low line Threshold for downward counting at high line VFBR1 - 3.9 - V VFBZHL - 3.2 - V VFBZLL - 2.5 - V VFBZHH - 2.9 - V Threshold for upward counting at highline VFBZLH - 2.3 - V ZC current for IC switch threshold to high line IZCSH - 1.3 - mA ZC current for IC switch threshold to low line Counter time1 IZCSL - 0.8 - mA tCOUNT - 48 - ms Maximum restart time in normal operation tOffMax 30 42 57.5 μs The parameter is not subjected to production test - verified by design/characterization Data Sheet 16 1 Revision 2.3 2017-09-12 Quasi-Resonant, 650V CoolSET™ in DS0-12 Package Electrical Characteristics 4.3.8 Table 13 Active Burst Mode Digital Zero Crossing Parameter Symbol Limit Values Unit min. typ. max. VFBEB - 1.25 - NZC_ABM - 7 - Blanking time for entering Active Burst Mode tBEB - 24 - ms Feedback voltage for leaving Active Burst Mode VFBLB - 4.5 - V Feedback voltage for burst-on VFBBOn - 3.6 - V Feedback voltage for burst-off VFBBOff - 3.0 - V Fixed Switching Frequency in Active Burst Mode fsB 39 52 65 kHz Max. Duty Cycle in Active Burst Mode DmaxB - 0.5 - Feedback voltage for entering Active Burst Mode Minimum Up/down value for entering Test Condition V Active Burst Mode 4.3.9 Table 14 Protection Protection Parameter Symbol Limit Values Unit min. typ. max. 24.0 25.0 26.0 V Over Load or Open Loop Detection VFBOLP threshold for OLP protection at FB pin - 4.5 - V Over Load or Open Loop Protection Blanking Time tOLP_B 20 30 44 ms Output Overvoltage detectionthreshold at the ZC pin VZCOVP 3.55 3.7 3.84 V Blanking time for Output Overvoltage protection Threshold for short winding protection Blanking time for short-winding tZCOVP - 100 - μs VCSSW 1.63 1.68 1.78 V tCSSW - 190 - ns TjCon 130 140 150 °C VVCCPD 5.2 - 7.8 °C VCC overvoltage threshold protection Over temperature protection1 Power Down Reset threshold for Latched Mode VVCCOVP The parameter is not subjected to production test - verified by design/characterization Data Sheet 17 Test Condition After Latched Off Mode is entered 1 Revision 2.3 2017-09-12 Quasi-Resonant, 650V CoolSET™ in DS0-12 Package Electrical Characteristics Note: 4.3.10 Table 15 The trend of all the voltage levels in the Control Unit is the same regarding the deviation except VVCCOVP & VVCCOVP CoolMOS™ Section CoolMOS™ Section Parameter Symbol Limit Values min. typ. max. Unit Test Condition Drain Source Breakdown Voltage V(BR)DSS 650 - - V Tj = 110 °C Drain Source On-Resistance RDSon - 4.70 10.0 5.44 12.5 Ω Tj = 25 °C Tj=125 °C1 at ID = 0.5 A Effective output capacitance, energy related Co(er) - 4.751 - pF VDS = 0 V to 480 V Rise Time trise - 302 - ns Fall Time tfall - 302 - ns The parameter is not subjected to production test - verified by design/characterization Measured in a Typical Flyback Converter Application Data Sheet 18 1 2 Revision 2.3 2017-09-12 Quasi-Resonant, 650V CoolSET™ in DS0-12 Package CoolMOS™ Performance Characteristics 5 CoolMOS™ Performance Characteristics Figure 10 Safe Operating Area (SOA) curve for ICE2QR4765G Figure 11 Power dissipation; Ptot=f(Ta) Data Sheet 19 Revision 2.3 2017-09-12 Quasi-Resonant, 650V CoolSET™ in DS0-12 Package CoolMOS™ Performance Characteristics Figure 12 Data Sheet Drain-source breakdown voltage; VBR(DSS)=f(Tj), ID=0.25mA 20 Revision 2.3 2017-09-12 Quasi-Resonant, 650V CoolSET™ in DS0-12 Package Input Power Curve 6 Input Power Curve Two input power curves gives typical input power versus ambient temperature are showed below; Vin=85~265 VAC (Figure 13) and Vin=230 VAC (Figure 14). The curves are derived based on a typical discontinuous mode flyback model which considers either 50 % duty ratio or 115 V maximum secondary to primary reflected voltage (high priority). The calculation is based on no copper area as heatsink for the device. The input power already includes power loss at input common mode choke and bridge rectifier and the CoolMOSTM. The device saturation current (ID_plus @ Tj=125 °C) is also considered. To estimate the out power of the device, it is simply multiplying the input power at a particular ambient temperature with the estimated efficiency for the application. For example, a wide range input voltage (Figure 13), operating temperature is 50 °C, estimated efficiency is 85 %,the output power is 14.45 W (17 W*0.85). Figure 13 Input power curve VIN=85~265 VAC; Pin=f(Ta) Figure 14 Input power curve VIN=230 VAC; Pin=f(Ta) Data Sheet 21 Revision 2.3 2017-09-12 Quasi-Resonant, 650V CoolSET™ in DS0-12 Package Outline Dimension 7 Figure 15 Data Sheet Outline Dimension PG-DSO-12 (Pb-free lead plating Plastic Dual-in-Line Outline) 22 Revision 2.3 2017-09-12 Quasi-Resonant, 650V CoolSET™ in DS0-12 Package Marking 8 Marking Figure 16 Marking for ICE2QR4765G Revision History Major changes since the last revision Page or Reference 1, 23 Data Sheet Description of change Revise wrong marking text 23 Revision 2.3 2017-09-12 Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CoolGaN™, CoolMOS™, CoolSET™, CoolSiC™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, Infineon™, ISOFACE™, IsoPACK™, i-Wafer™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OPTIGA™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, ReverSave™, SatRIC™, SIEGET™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, SPOC™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. 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