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ICE3BR2565JF

ICE3BR2565JF

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    TO220-6

  • 描述:

    Converter Offline Flyback Topology 67kHz PG-TO220-6

  • 数据手册
  • 价格&库存
ICE3BR2565JF 数据手册
V er si o n 2 . 1 , 7 M a y 2 0 1 1 ® I CE 3BR 2565 JF O ff - L in e S M P S Cu r r e n t M o d e C o n tr o lle r wit h in t e g r a te d 6 5 0 V C o o lM OS ® a n d S ta r tu p c e ll ( fr e q u e n c y j itt e r M o d e ) in Fu l lP a k Po we r M an a ge me nt & Su pp l y N e v e r s t o p t h i n k i n g . CoolSET®-F3R ICE3BR2565JF Revision History: 2011-5-7 Previous Version: 2.0 Page Subjects (major changes since last revision) 32 Revise typo in outline dimension drawing Datasheet For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http:// www.infineon.com CoolMOS®, CoolSET® are trademarks of Infineon Technologies AG. Edition 2011-5-7 Published by Infineon Technologies AG, 81726 Munich, Germany, © 2008 Infineon Technologies AG. All Rights Reserved. Legal disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies Office. Infineon Technologies Components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. CoolSET®-F3R ICE3BR2565JF Off-Line SMPS Current Mode Controller with integrated 650V CoolMOS® and Startup cell (frequency jitter Mode) in FullPak Product Highlights • TO220 FullPak with low Rdson MOSFET for high power application • Active Burst Mode to reach the lowest Standby Power Requirements < 100mW • Auto Restart protection for overload, overtemperature, overvoltage • External auto-restart enable function • Built-in soft start and blanking window • Extendable blanking Window for high load jumps • Built-in frequency jitter and soft driving for low EMI • Green Mould Compound • Pb-free lead plating; RoHS compliant Features • • • • • • • • • • • • • 650V avalanche rugged CoolMOS® with built-in Startup Cell Active Burst Mode for lowest Standby Power Fast load jump response in Active Burst Mode 67kHz internally fixed switching frequency Auto Restart Protection Mode for Overload, Open Loop, VCC Undervoltage, Overtemperature & Overvoltage Built-in Soft Start Built-in blanking window with extendable blanking time for short duration high current External auto-restart enable pin Max Duty Cycle 75% Overall tolerance of Current Limiting < ±5% Internal PWM Leading Edge Blanking BiCMOS technology provide wide VCC range Built-in Frequency jitter and soft driving for low EMI PG-TO220FS-6 PG-TO220-6-247 Description The CoolSET®-F3R FullPak is the enhanced version of CoolSET®-F3 and targets for the Off-Line Adapters and high power range SMPS in DVD R/W, DVD Combi, set top box, etc. It has a wide Vcc range to 25V by adopting the BiCMOS technology. With the merit of Active Burst Mode, it can achieve the lowest Standby Power Requirements ( 4.5V and during soft_start period and the IC enters Auto Restart Mode. The VCC voltage is observed by comparator C1. The fault conditions are to detect the abnormal operating during start up such as open loop during light load start up, etc. The logic can eliminate the possible of entering Auto Restart mode if there is a small voltage overshoots of VVCC during normal operating. The 2nd one is VVCC >25.5V and last for 120us and the IC enters Auto Restart Mode. This 25.5V Vcc OVP protection is inactivated during burst mode. The Thermal Shutdown block monitors the junction temperature of the IC. After detecting a junction temperature higher than 130°C, the Auto Restart Mode is entered. In case the pre-defined auto-restart features are not sufficient, there is a customer defined external Autorestart Enable feature. This function can be triggered by pulling down the BA pin to < 0.33V. It can simply add Version 2.1 18 7 May 2011 CoolSET®-F3R ICE3BR2565JF Electrical Characteristics 4 Electrical Characteristics Note: All voltages are measured with respect to ground (Pin 5). The voltage levels are valid if other ratings are not violated. 4.1 Note: Absolute Maximum Ratings Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction of the integrated circuit. For the same reason make sure, that any capacitor that will be connected to pin 4 (VCC) is discharged before assembling the application circuit.Ta=25°C unless otherwise specified. Parameter Symbol Limit Values min. max. Unit Remarks Switching drain current, pulse width tp limited by max. Tj=150°C Is - 2.68 A Pulse drain current, pulse width tp limited by max. Tj=150°C ID_Puls - 5.3 A Avalanche energy, repetitive tAR limited EAR by max. Tj=150°C1) - 0.07 mJ Avalanche current, repetitive tAR limited IAR by max. Tj=150°C1) - 1.8 A VCC Supply Voltage VVCC -0.3 27 V FB Voltage VFB -0.3 5.5 V BA Voltage VBA -0.3 5.5 V CS Voltage VCS -0.3 5.5 V Junction Temperature Tj -40 150 °C Storage Temperature TS -55 150 °C Thermal Resistance Junction -Ambient RthJA - 82 K/W Thermal Resistance Junction -case RthJC - 5.2 K/W Soldering temperature, wavesoldering only allowed at leads Tsold - 260 °C 1.6mm (0.063 in.) from case for 10s Power dissipation, Tc=25°C Ptot - 24 W Refer to Figure 57 ESD Capability (incl. Drain Pin) VESD - 2 kV Human body model2) 60 Ncm M2.5 screws Mounting torque ID=1.8A Controller & CoolMOS® 1) Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f 2) According to EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5kW series resistor) Version 2.1 19 7 May 2011 CoolSET®-F3R ICE3BR2565JF Electrical Characteristics 4.2 Note: Operating Range Within the operating range the IC operates as described in the functional description. Parameter Symbol Limit Values min. max. Unit Remarks VCC Supply Voltage VVCC VVCCoff 25 V Max. value limited due to Vcc OVP Junction Temperature of Controller TjCon -25 130 °C Max value limited due to thermal shut down of controller Junction Temperature of CoolMOS® TjCoolMOS -25 150 °C 4.3 4.3.1 Note: Characteristics Supply Section The electrical characteristics involve the spread of values within the specified supply voltage and junction temperature range TJ from – 25 °C to 125 °C. Typical values represent the median values, which are related to 25°C. If not otherwise stated, a supply voltage of VCC = 18 V is assumed. Parameter Symbol Limit Values min. typ. max. Unit Test Condition Start Up Current IVCCstart - 150 250 mA VVCC =17V VCC Charge Current IVCCcharge1 - - 5.0 mA VVCC = 0V IVCCcharge2 0.55 0.9 1.60 mA VVCC = 1V IVCCcharge3 - 0.7 - mA VVCC =17V Leakage Current of Start Up Cell and CoolMOS® IStartLeak - 0.2 50 mA VDrain = 600V at Tj=100°C 1) Supply Current with Inactive Gate IVCCsup1 - 1.5 2.5 mA Supply Current with Active Gate IVCCsup2 - 2.4 3.7 mA IFB = 0A Supply Current in Auto Restart Mode with Inactive Gate IVCCrestart - 250 - mA IFB = 0A Supply Current in Active Burst Mode with Inactive Gate IVCCburst1 - 500 950 mA VFB = 2.5V IVCCburst2 - 500 950 mA VVCC = 11.5V,VFB = 2.5V VCC Turn-On Threshold VCC Turn-Off Threshold VCC Turn-On/Off Hysteresis VVCCon VVCCoff VVCChys 17.0 9.8 - 18.0 10.5 7.5 19.0 11.2 - V V V 1) The parameter is not subjected to production test - verified by design/characterization Version 2.1 20 7 May 2011 CoolSET®-F3R ICE3BR2565JF Electrical Characteristics 4.3.2 Internal Voltage Reference Parameter Trimmed Reference Voltage 4.3.3 Symbol VREF Limit Values min. typ. max. 4.90 5.00 5.10 Unit Test Condition V measured at pin FB IFB = 0 PWM Section Parameter Symbol Limit Values Unit Test Condition min. typ. max. fOSC1 58 67 75 kHz fOSC2 62 67 74.5 kHz Tj = 25°C Frequency Jittering Range fjitter - ±2.7 - kHz Tj = 25°C Frequency Jittering period Tjitter - 4.0 - ms Tj = 25°C Max. Duty Cycle Dmax 0.70 0.75 0.80 Min. Duty Cycle Dmin 0 - - PWM-OP Gain AV 3.1 3.3 3.5 Voltage Ramp Offset VOffset-Ramp - 0.68 - V VFB Operating Range Min Level VFBmin - 0.5 - V VFB Operating Range Max level VFBmax - - 4.3 V FB Pull-Up Resistor RFB 9 15.4 22 kW Fixed Oscillator Frequency 1) VFB < 0.3V CS=1V, limited by Comparator C41) The parameter is not subjected to production test - verified by design/characterization 4.3.4 Soft Start time Parameter Soft Start time Version 2.1 Symbol tSS Limit Values min. typ. max. - 20.0 - 21 Unit Test Condition ms VFB > 4.0V 7 May 2011 CoolSET®-F3R ICE3BR2565JF Electrical Characteristics 4.3.5 Control Unit Parameter Symbol Limit Values min. typ. max. Unit Test Condition VFB = 4V Clamped VBA voltage during Normal Operating Mode VBAclmp 0.85 0.9 0.95 V Blanking time voltage limit for Comparator C3 VBKC3 3.85 4.00 4.15 V Over Load & Open Loop Detection Limit for Comparator C4 VFBC4 4.28 4.50 4.72 V Active Burst Mode Level for Comparator C5 VFBC5 1.13 1.22 1.31 V Active Burst Mode Level for Comparator C6a VFBC6a 3.45 3.60 3.74 V After Active Burst Mode is entered Active Burst Mode Level for Comparator C6b VFBC6b 2.97 3.10 3.22 V After Active Burst Mode is entered Overvoltage Detection Limit for Comparator C1 VVCCOVP1 19.6 20.7 21.7 V VFB = 5V Overvoltage Detection Limit for Comparator C2 VVCCOVP2 25.0 25.5 26.3 V Auto-restart Enable level at BA pin for Comparator C9 VAE 0.25 0.33 0.42 V Charging current at BA pin IBK 10.1 13.5 16.1 mA Charge starts after the built-in 20ms blanking time elapsed Thermal Shutdown1) TjSD 130 140 150 °C Controller Built-in Blanking Time for Overload Protection or enter Active Burst Mode tBK - 20 - ms without external capacitor at BA pin Inhibit Time for Auto-Restart enable function during start up tIHAE - 1.0 - ms Count when VCC>18V Spike Blanking Time before Auto tSpike - 30 - ms Restart Protection 1) The parameter is not subjected to production test - verified by design/characterization Note: The trend of all the voltage levels in the Control Unit is the same regarding the deviation except VVCCOVP and VVCCPD Version 2.1 22 7 May 2011 CoolSET®-F3R ICE3BR2565JF Electrical Characteristics 4.3.6 Current Limiting Parameter Symbol Limit Values min. typ. max. Unit Test Condition dVsense / dt = 0.6V/ms (see Figure 13) Peak Current Limitation (incl. Propagation Delay) Vcsth 0.88 1.06 1.13 V Peak Current Limitation during Active Burst Mode VCS2 0.22 0.26 0.29 V Leading Edge Blanking tLEB - 220 - ns CS Input Bias Current ICSbias -1.5 -0.2 - mA 4.3.7 VCS =0V CoolMOS® Section Parameter Symbol Limit Values min. typ. max. Unit Test Condition Drain Source Breakdown Voltage V(BR)DSS 650 - - V Tj = 110°C1) (Refer to Figure 65 for other V(BR)DSS in different Tj) VGS=0V, ID=0.25mA Drain Source Avalanche Breakdown Voltage V(BR)DS - 700 - V VGS=0V, ID=1.8A Drain Source On-Resistance RDSon - 2.56 5.67 6.91 2.83 6.26 7.64 W W W Tj = 25°C Tj=125°C1) Tj=150°C1) at ID = 1A Effective output capacitance, energy related Co(er) - 11 - pF VDS = 0V to 480V1) Rise Time trise - 302) - ns - 2) - ns Fall Time tfall 30 1) The parameter is not subjected to production test - verified by design/characterization 2) Measured in a Typical Flyback Converter Application Version 2.1 23 7 May 2011 CoolSET®-F3R ICE3BR2565JF Typical Controller Performance Characteristics Typical Controller Performance Characteristics 0.85 Vcc Charge Current IVCCcharge3 [mA] 200 184 176 168 PI-001-8889A23 Start Up Current IVCCstart [µA] 192 160 152 144 136 128 120 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105 115 125 0.81 0.77 0.73 0.69 PI-004-8889A23 5 0.65 0.61 0.57 0.53 0.49 0.45 -25 -15 -5 5 15 Junction Temperature [°C] Start Up Current IVCCstart Figure 30 Vcc Supply Current IVCCsup1 [mA] 0.92 0.88 0.84 0.80 0.76 0.72 0.68 0.64 -5 5 15 25 35 45 55 65 75 85 VCC Charge Current IVCCcharge1 85 95 105 115 125 1.70 1.65 1.60 1.55 1.50 1.45 1.40 1.35 Figure 31 -5 5 15 25 35 45 55 65 75 85 95 105 115 125 VCC Supply Current IVCCsup1 2.9 0.88 0.84 0.80 0.76 0.72 0.68 0.64 -5 5 15 25 35 45 55 65 75 85 95 105 115 125 2.7 2.6 2.5 2.4 2.3 2.2 2.1 2.0 1.9 -25 -15 Junction Temperature [°C] -5 5 15 25 35 45 55 65 75 85 95 105 115 125 Junction Temperature [°C] VCC Charge Current IVCCcharge2 Version 2.1 2.8 PI-006-8888A12_ICE3BR2565JF Vcc Supply Current IVCCsup2 [mA] 0.92 PI-003-8889A23 Vcc Charge Current IVCCcharge2 [mA] 75 Junction Temperature [°C] 0.96 Figure 29 65 1.75 1.30 -25 -15 95 105 115 125 1.00 0.60 -25 -15 55 VCC Charge Current IVCCcharge3 Junction Temperature [°C] Figure 28 45 1.80 0.96 PI-002-8889A23 Vcc Charge Current IVCCcharge1 [mA] 1.00 0.60 -25 -15 35 PI-005-8889A23 Figure 27 25 Junction Temperature [°C] Figure 32 24 VCC Supply Current IVCCsup2 7 May 2011 CoolSET®-F3R ICE3BR2565JF Typical Controller Performance Characteristics 290 280 270 260 250 240 230 220 210 -25 -15 -5 5 15 25 35 45 55 65 75 85 10.9 10.8 10.7 10.6 10.5 10.4 10.3 10.2 10.1 10.0 -25 -15 95 105 115 125 PI-010-8889A23 Vcc Turn-Off Threshold VVCCoff [V] 11.0 300 PI-007-8889A23 Vcc Supply Current IVCCrestart [uA] 310 -5 5 VCC Supply Current IVCCrestart Figure 36 Reference Voltage VREF [V] 560 540 520 PI-008-8889A23 Vcc Supply Current IVCCburst [uA] 45 55 65 75 85 95 105 115 125 VCC Turn-Off Threshold VVCCoff 5.16 580 500 480 460 440 5.12 5.08 5.04 5.00 4.96 4.92 4.88 4.84 420 -5 5 15 25 35 45 55 65 75 85 4.80 -25 -15 95 105 115 125 -5 5 15 25 35 45 55 65 75 85 95 105 115 125 Junction Temperature [°C] Junction Temperature [°C] Figure 34 35 5.20 600 400 -25 -15 25 PI-011-8889A23 Figure 33 15 Junction Temperature [°C] Junction Temperature [°C] Figure 37 VCC Supply Current IVCCburst Reference Voltage VREF 70 18.3 18.2 18.1 18.0 17.9 17.8 17.7 17.6 17.5 -25 -15 68 67 66 65 64 63 62 61 60 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105 115 125 Figure 38 VCC Turn-On Threshold VVCCon Version 2.1 -5 5 15 25 35 45 55 65 75 85 95 105 115 125 Junction Temperature [°C] Junction Temperature [°C] Figure 35 69 PI-012-8889A23 Oscillator Frequency fosc1 [kHz] 18.4 PI-010-8889A23 Vcc Turn-On threshold VVCCon [V] 18.5 25 Oscillator Frequency fOSC1 7 May 2011 CoolSET®-F3R ICE3BR2565JF Typical Controller Performance Characteristics 2.9 2.8 2.7 2.6 2.5 2.4 2.3 2.2 2.1 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105 115 125 0.72 0.71 0.70 0.69 PI-016-8889A23 Voltage Ramp Offset VOffset-Ramp [V] 0.73 3.0 PI-001-8889A23 Frequency Jitter Range fjitter [+/-kHz] 3.1 0.68 0.67 0.66 0.65 0.64 0.63 -25 -15 -5 5 Junction Temperature [°C] Figure 42 0.780 0.774 0.762 0.756 PI-014-8889A23 Max. Duty Cycle Dmax 0.768 0.750 0.744 0.738 0.732 0.726 0.720 -25 -15 -5 5 15 25 35 45 55 65 75 85 35 45 55 65 75 85 95 105 115 125 95 105 115 125 Voltage Ramp Offset VOffset-Ramp 20 19 18 17 16 15 14 13 12 11 10 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105 115 125 Junction Temperature [°C] Junction Temperature [°C] Figure 40 25 PI-019-8889A23 Frequency Jittering Range fjitter Feedback Pull-Up resistor RFB [kOhm] Figure 39 15 Junction Temperature [°C] Figure 43 Max. Duty Cycle Dmax Feedback Pull-Up resistor RFB 0.95 3.45 3.35 3.30 PI-015-8889A23 PWM OP Gain AV 3.40 3.25 3.20 3.15 3.10 3.05 3.00 -25 -15 0.93 0.92 0.91 0.90 0.89 0.88 0.87 0.86 0.85 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105 115 125 Figure 44 PWM-OP Gain AV Version 2.1 -5 5 15 25 35 45 55 65 75 85 95 105 115 125 Junction Temperature [°C] Junction Temperature [°C] Figure 41 0.94 PI-020-8889A23 Clamped VBA Voltage VBAclmp [V] 3.50 26 Clamped VBA voltage VBAclmp 7 May 2011 CoolSET®-F3R ICE3BR2565JF Typical Controller Performance Characteristics 3.70 4.06 4.04 4.02 4.00 3.98 3.96 3.94 3.92 3.90 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105 115 125 3.68 3.66 3.64 3.62 PI-024-8889A23 Active Burst Model Leve VFBC6a [V] 4.08 PI-021-8889A23 Blanking time voltage limit VBKC3 [V] 4.10 3.60 3.58 3.56 3.54 3.52 3.50 -25 -15 -5 5 Figure 45 15 25 35 45 55 65 75 85 95 105 115 125 Junction Temperature [°C] Junction Temperature [°C] Figure 48 Blanking time voltage limit VBKC3 Active Burst Mode Level VFBC6a 3.30 4.60 4.55 4.50 4.45 4.40 4.35 -5 5 15 25 35 45 55 65 75 85 Overvoltage Detection Limit V VCCovp1 [V] 1.32 1.28 1.24 PI-023-8889A23 Active Burst mode Level VFBC5 [V] 1.36 1.20 1.16 1.12 1.08 1.04 5 15 25 35 45 55 65 75 85 3.05 3.00 2.95 2.90 2.85 2.80 -25 -15 Figure 49 Over Load Detection Limit VFBC4 -5 3.10 95 105 115 125 15 25 35 45 55 65 75 85 95 105 115 125 Active Burst Mode Level VFBC6b 20.9 20.8 20.7 20.6 20.5 20.4 20.3 20.2 20.1 20.0 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105 115 125 Junction Temperature [°C] Active Burst Mode Level VFBC5 Version 2.1 5 21.0 Junction Temperature [°C] Figure 47 -5 Junction Temperature [°C] 1.40 1.00 -25 -15 3.15 95 105 115 125 Junction Temperature [°C] Figure 46 3.20 PI-026-8889A23 4.30 -25 -15 3.25 PI-025-8889A23 Active Burst Mode Level VFBC6b [V] 4.65 PI-022-8889A23 Over Load detection limit VFBC4 [V] 4.70 Figure 50 27 Overvoltage Detection Limit VVCCOVP1 7 May 2011 CoolSET®-F3R ICE3BR2565JF 1.20 25.9 25.8 25.7 25.6 25.5 25.4 25.3 25.2 25.1 25.0 -25 -15 -5 5 15 25 35 45 55 65 75 85 1.16 1.12 1.08 1.04 1.00 0.96 0.92 0.88 0.84 0.80 -25 -15 95 105 115 125 PI-031-8889A23 Peak Current Limitation VCSth [V] 26.0 PI-027-8889A23 Overvoltage Detection Level VVCCOVP2 [V] Typical Controller Performance Characteristics -5 5 Figure 51 15 25 35 45 55 65 75 85 95 105 115 125 Junction Temperature [°C] Junction Temperature [°C] Figure 54 Over Load Detection Limit VVCCOVP2 Peak Current Limitation Vcsth 0.30 0.36 0.35 0.34 0.33 0.32 0.31 0.30 0.29 0.28 -25 -15 0.29 0.28 0.27 0.26 0.25 0.24 0.23 0.22 0.21 0.20 -25 -15 -5 5 15 25 35 45 55 65 75 85 PI-032-8889A23 Peak Current Limitation VCS2 [V] 0.37 PI-028-8889A23 Auto-restart Enable Level VAE [V] 0.38 -5 5 95 105 115 125 Junction Temperature [°C] Figure 55 Auto-restart Enable Level VAE Leading Edge Blanking tLEB [ns] 14.0 13.5 13.0 PI-029-8889A23 Charging Current at BA pin IBK [µA] 14.5 12.5 12.0 11.5 11.0 10.5 45 55 65 75 85 95 105 115 125 Peak Current Limitation VCS2 280 270 260 250 240 230 220 210 200 190 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105 115 125 Figure 56 Charging Current at BA pin IBK Version 2.1 -5 5 15 25 35 45 55 65 75 85 95 105 115 125 Junction Temperature [°C] Junction Temperature [°C] Figure 53 35 290 15.0 10.0 -25 -15 25 PI-033-8889A23 Figure 52 15 Junction Temperature [°C] 28 Leading Edge Blanking tLEB 7 May 2011 CoolSET®-F3R ICE3BR2565JF Typical CoolMOS® Performance Characteristics 6 Figure 57 Typical CoolMOS® Performance Characteristics Power dissipation; Ptot=f(TC) Figure 60 Typ. output characteristics; ID=f(VDS),Tj=25°C, parameter : VCC limited by on-state resistance Figure 58 Safe operation area; ID=f(VDS), parameter : D=0, TC=25°C Figure 61 Typ. output characteristics; ID=f(VDS),Tj=150°C, parameter : VCC Figure 59 Transient thermal impedance; ZthJC=f(tp),parameter: D=tp/T Figure 62 Typ. drain-source on-state resistance; RDS(on)=f(ID); Tj=150°C, parameter : VCC Version 2.1 29 7 May 2011 CoolSET®-F3R ICE3BR2565JF Typical CoolMOS® Performance Characteristics Figure 63 Drain-source on-state resistance; RDS(on)=f(Tj); ID=1A;, Vcc>10.5V Figure 66 Typ. capacitances; C=f(VDS),VGS=0V,f=1MHz Figure 64 Avalanche energy; EAS=f(Tj),ID=0.7A,VDD=50V Figure 67 Typ. Coss stored energy; Eoss=f(VDS) Figure 65 Drain-source breakdown voltage; VBR(DSS)=f(Tj), ID=0.25mA Version 2.1 30 7 May 2011 CoolSET®-F3R ICE3BR2565JF Input Power Curve 7 Input Power Curve Two input power curves giving the typical input power versus ambient temperature are showed below; Vin=85Vac~265Vac (Figure 68) and Vin=230Vac+/-15% (Figure 69). The curves are derived based on a typical discontinuous mode flyback model which considers either 50% maximum duty ratio or 100V maximum secondary to primary reflected voltage (higher priority). The calculation is based on RthSA=2.7K/W as heatsink and RthCS=1.1K/W as thermal grease thermal resistance. The input power already includes the power loss at input common mode choke, bridge rectifier and the CoolMOS. The device saturation current (ID_Puls @ Tj=125°C) is also considered. To estimate the output power of the device, it is simply multiplying the input power at a particular operating ambient temperature with the estimated efficiency for the application. For example, a wide range input voltage (Figure 68), operating temperature is 50°C, estimated efficiency is 80%, then the estimated output power is 64.8W (81W * 80%). 90 70 60 PI-005-ICE3BR2565JF_85Vac Input power (85~265Vac) [W] 80 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 100 110 120 130 Ambient Temperature [°C] Figure 68 Input power curve Vin=85~265Vac; Pin=f(Ta) 110 90 80 70 PI-006-ICE3BR2565JF_230Vac Input power (230Vac) [W] 100 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 Ambient Temperature [°C] Figure 69 Version 2.1 Input power curve Vin=230Vac+/-15%; Pin=f(Ta) 31 7 May 2011 CoolSET®-F3R ICE3BR2565JF Outline Dimension 8 Outline Dimension PG-TO220-6-247 Figure 70 PG-TO220-6-247 (PB-free Plating FullPak Package) Dimensions in mm Version 2.1 32 7 May 2011 CoolSET®-F3R ICE3BR2565JF Marking 9 Marking Marking Figure 71 Version 2.1 Marking for ICE3BR2565JF 33 7 May 2011 CoolSET®-F3R ICE3BR2565JF Schematic for recommended PCB layout 10 Schematic for recommended PCB layout Figure 72 Schematic for recommended PCB layout General guideline for PCB layout design using F3/F3R CoolSET (refer to Figure 72): 1. “Star Ground “at bulk capacitor ground, C11: “Star Ground “means all primary DC grounds should be connected to the ground of bulk capacitor C11 separately in one point. It can reduce the switching noise going into the sensitive pins of the CoolSET device effectively. The primary DC grounds include the followings. a. DC ground of the primary auxiliary winding in power transformer, TR1, and ground of C16 and Z11. b. DC ground of the current sense resistor, R12 c. DC ground of the CoolSET device, GND pin of IC11; the signal grounds from C13, C14, C15 and collector of IC12 should be connected to the GND pin of IC11 and then “star “connect to the bulk capacitor ground. d. DC ground from bridge rectifier, BR1 e. DC ground from the bridging Y-capacitor, C4 2. High voltage traces clearance: High voltage traces should keep enough spacing to the nearby traces. Otherwise, arcing would incur. a. 400V traces (positive rail of bulk capacitor C11) to nearby trace: > 2.0mm b. 600V traces (drain voltage of CoolSET IC11) to nearby trace: > 2.5mm 3. Filter capacitor close to the controller ground: Filter capacitors, C13, C14 and C15 should be placed as close to the controller ground and the controller pin as possible so as to reduce the switching noise coupled into the controller. Guideline for PCB layout design when >3KV lightning surge test applied (refer to Figure 72): 1. Add spark gap Spark gap is a pair of saw-tooth like copper plate facing each other which can discharge the accumulated charge during surge test through the sharp point of the saw-tooth plate. a. Spark Gap 3 and Spark Gap 4, input common mode choke, L1: Gap separation is around 1.5mm (no safety concern) Version 2.1 34 7 May 2011 CoolSET®-F3R ICE3BR2565JF Schematic for recommended PCB layout b. Spark Gap 1 and Spark Gap 2, Live / Neutral to GROUND: These 2 Spark Gaps can be used when the lightning surge requirement is >6KV. 230Vac input voltage application, the gap separation is around 5.5mm 115Vac input voltage application, the gap separation is around 3mm 2. Add Y-capacitor (C2 and C3) in the Live and Neutral to ground even though it is a 2-pin input 3. Add negative pulse clamping diode, D11 to the Current sense resistor, R12: The negative pulse clamping diode can reduce the negative pulse going into the CS pin of the CoolSET and reduce the abnormal behavior of the CoolSET. The diode can be a fast speed diode such as IN4148. The principle behind is to drain the high surge voltage from Live/Neutral to Ground without passing through the sensitive components such as the primary controller, IC11. Version 2.1 35 7 May 2011 Total Quality Management Qualität hat für uns eine umfassende Bedeutung. Wir wollen allen Ihren Ansprüchen in der bestmöglichen Weise gerecht werden. Es geht uns also nicht nur um die Produktqualität – unsere Anstrengungen gelten gleichermaßen der Lieferqualität und Logistik, dem Service und Support sowie allen sonstigen Beratungs- und Betreuungsleistungen. Quality takes on an allencompassing significance at Semiconductor Group. For us it means living up to each and every one of your demands in the best possible way. So we are not only concerned with product quality. We direct our efforts equally at quality of supply and logistics, service and support, as well as all the other ways in which we advise and attend to you. Dazu gehört eine bestimmte Geisteshaltung unserer Mitarbeiter. Total Quality im Denken und Handeln gegenüber Kollegen, Lieferanten und Ihnen, unserem Kunden. Unsere Leitlinie ist jede Aufgabe mit „Null Fehlern“ zu lösen – in offener Sichtweise auch über den eigenen Arbeitsplatz hinaus – und uns ständig zu verbessern. Part of this is the very special attitude of our staff. Total Quality in thought and deed, towards co-workers, suppliers and you, our customer. Our guideline is “do everything with zero defects”, in an open manner that is demonstrated beyond your immediate workplace, and to constantly improve. Unternehmensweit orientieren wir uns dabei auch an „top“ (Time Optimized Processes), um Ihnen durch größere Schnelligkeit den entscheidenden Wettbewerbsvorsprung zu verschaffen. Geben Sie uns die Chance, hohe Leistung durch umfassende Qualität zu beweisen. Wir werden Sie überzeugen. http://www.infineon.com Published by Infineon Technologies AG Throughout the corporation we also think in terms of Time Optimized Processes (top), greater speed on our part to give you that decisive competitive edge. Give us the chance to prove the best of performance through the best of quality – you will be convinced.
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