IDD15E60BUMA2

IDD15E60 Fast Switching EmCon Emitter Diode Controlled Diode Product Summary Feature VRRM 600 V IF 15 A VF 1.5 V T jmax 175 °C 600VV Emitter • 600 EmConControlled technologytechnology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage PG-TO252-3 • 175°C operating temperature • Easy paralleling Type Package IDD15E60 PG-TO252-3 Ordering Code Marking - D15E60 Pin 1 PIN 2,4 NC PIN 3 C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Parameter Symbol Symbol Repetitive peak reverse voltage Repetitive peak reverse voltage VRRM VRRM Continousforward forward current Continuous current TTCC==25°C 25C TTC ==90°C 90C IF IF 29.2 29.2 19.6 19.6 Surge non repetitive forward current Surge non repetitive forward current TC = 25C, tp = 10 ms, sine halfwave I FSM IFSM 6060 A Maximum repetitive forward current repetitive forward current TMaximum C = 25C, tp limited by tj,max, D = 0.5 IFRM I FRM 4545 A TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation dissipation TPower C = 25C PtotP t o t 83.3 47.2 83.3 C Value Value 600 600 Unit Unit VV A A TC=25°C, tp=10 ms, sine halfwave TTCC==25°C 90C Tj Operating TC=90°C junction temperature Storage temperature Operating and storage temperature Soldering temperature Soldering temperature 1.6mm in.) from case for 10 s reflow(0.063 soldering, MSL3 Rev. 2.4 Rev.242 Tstg Tj , T stg TS T S Page 1 -40…+175 47.2 -55...+150 -55...+175 260 260 WW °C°C °C 2013-12-05 2007-04-24 IDD15E60 Thermal Characteristics Symbol Parameter Values Unit min. typ. max. - - 1.8 @ min. footprint - - 75 @ 6 cm 2 cooling area 1) - - 50 Characteristics Thermal resistance, junction - case RthJC SMD version, device on PCB: RthJA K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Reverse leakage current IR µA V R=600V, Tj=25°C - - 50 V R=600V, Tj=150°C - - 1250 Forward voltage drop VF V IF=15A, T j=25°C - 1.5 2 IF=15A, T j=150°C - 1.5 - 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.4 Rev.2.2 Page 2 2013-12-05 2007-04-24 IDD15E60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Values min. typ. Unit max. Dynamic Characteristics Reverse recovery time ns t rr V R=400V, IF=15A, diF/dt=1000A/µs, Tj=25°C - 87 - V R=400V, IF=15A, diF/dt=1000A/µs, Tj=125°C - 124 - V R=400V, IF=15A, diF/dt=1000A/µs, Tj=150°C - 131 - Peak reverse current A I rrm V R=400V, IF = 15 A, di F/dt=1000A/µs, Tj=25°C - 13.7 - V R=400V, IF =15A, diF/dt=1000A/µs, T j=125°C - 16.4 - V R=400V, IF =15A, diF/dt=1000A/µs, T j=150°C - 19.3 - Reverse recovery charge nC Q rr V R=400V, IF=15A, diF/dt=1000A/µs, Tj=25°C - 595 - V R=400V, IF =15A, diF/dt=1000A/µs, T j=125°C - 995 - V R=400V, IF =15A, diF/dt=1000A/µs, T j=150°C - 1104 - V R=400V, IF=15A, diF/dt=1000A/µs, Tj=25°C - 3.6 - V R=400V, IF=15A, diF/dt=1000A/µs, Tj=125°C - 4.3 - V R=400V, IF=15A, diF/dt=1000A/µs, Tj=150°C - 4.5 - Reverse recovery softness factor Rev. 2.4 Rev.2.2 S Page 3 2013-12-05 2007-04-24 IDD15E60 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f(TC) parameter: Tj ≤ 175 °C parameter: Tj≤ 175°C 90 30 W A 60 20 IF P tot 70 50 15 40 30 10 20 5 10 0 25 50 75 100 125 0 25 175 °C 50 75 100 125 TC 175 °C TC 3 Typ. diode forward current 4 Typ. diode forward voltage IF = f (VF) VF = f (Tj) 50 2 V 30A A 1.8 VF IF 1.7 30 20 -55°C 25°C 100°C 150°C 1.6 1.5 15A 1.4 1.3 10 7.5A 1.2 1.1 0 0.5 1 1.5 1 -60 2.5 V VF Rev. 2.4 Rev.2.2 Page 4 -20 20 60 100 160 °C Tj 2013-12-05 2007-04-24 IDD15E60 5 Typ. reverse recovery time 6 Typ. reverse recovery charge trr = f (diF/dt) Qrr =f(diF/dt) parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125 °C 500 1450 ns nC 400 30A 1250 30A 15A 7.5A 300 Qrr trr 350 1150 15A 1050 250 950 200 850 150 7.5A 750 100 650 50 0 200 300 400 500 600 700 800 550 200 A/µs 1000 di F/dt 300 400 500 600 700 800 A/µs 1000 diF/dt 7 Typ. reverse recovery current 8 Typ. reverse recovery softness factor Irr = f (diF/dt) S = f(diF /dt) parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125°C 11 18 A 16 30A 15A 7.5A 15 9 13 S Irr 14 8 30A 12 7 11 15A 10 6 9 8 7,5A 5 7 6 4 5 4 200 Rev. 2.4 Rev.2.2 300 400 500 600 700 800 3 200 A/µs 1000 di F/dt Page 5 300 400 500 600 700 800 A/µs 1000 diF/dt 2013-12-05 2007-04-24 IDD15E60 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IDD15E60 K/W ZthJC 10 0 10 -1 D = 0.50 0.20 0.10 0.05 10 -2 0.02 0.01 single pulse 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Rev. 2.4 Rev.2.2 Page 6 2013-12-05 2007-04-24 IDD15E60 PG - TO252 - 3 Rev. 2.4 Rev.2.2 Page 7 2013-12-05 2007-04-24 IDD15E60 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, Published by D-81541 München Infineon Technologies AG 1999 © Infineon Technologies AG 81726 Munich, Germany All Rights Reserved. © 2013 Infineon Technologies AG Attention All Rightsplease! Reserved. The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. Legal Disclaimer The information in all this document shall but in no regardedofas a guarantee of conditions or We hereby disclaimgiven any and warranties, including not event limited be to warranties non-infringement, characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any regarding circuits, descriptions and charts stated herein. information regarding the application of the device, Infineon Technologies hereby disclaims any and all Infineon Technologies is anofapproved CECC manufacturer. warranties and liabilities any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Information Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon WarningsTechnologies Office (www.infineon.com). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Warnings Infineon Technologies Components may only bemay usedcontain in life-support devices or systems For withinformation the express on the types Due to technical requirements, components dangerous substances. written approval of Infineon Technologies, if a failure of such components can reasonably be expected to in question, please contact the nearest Infineon Technologies Office. cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device The Infineon Technologies component described in this Data Sheet may be used in life-support devices or or system Life support devices or systems are intended to be implanted in the human body, or to support systems and/orand automotive, aviation and aerospace applications or systems withthat thethe express and/or maintain sustain and/or protect human life. If they fail, it is reasonable toonly assume health written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the of the user or other persons may be endangered. failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4 Rev.2.2 Page 8 2013-12-05 2007-04-24