IDDD08G65C6XTMA1

IDDD08G65C6 6 th Generation CoolSiC™ 650V SiC Schottky Diode The CoolSiC™ generation G is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF . The CoolSiC™ Schottky diode VG has been designed to complement our V and V CoolMOS™ families, meeting the most stringent application requirements in this voltage range. Table 1 Key performance parameters PG-HDSOP-10-1 Parameter Value Unit VRRM 650 V QC (VR = 400 V) 12.2 nC EC (VR = 400 V) 2.2 µJ IF (TC ≤ 8 A 1.25 V 0 °C, D = 1) VF (IF = 8 A, Tj = 25 °C) Table 2 Cathode Pin 6-10 Package information Pin 1-2: n.c. Pin 3-5: Anode Type / ordering Code Package Marking IDDD08G65C6 PG-HDSOP-10-1 D0865C6 Pin 3-5 Pin 6-10: Cathode Features  Best in class forward voltage (1.25 V)  Best in class figure of merit (Qc x VF)  High dv/dt ruggedness (150 V/ns) Benefits  System efficiency improvement  System cost and size savings due to the reduced cooling requirements  Enabling higher frequency and increased power density Potential Applications  Power factor correction in SMPS  Solar inverter  Uninterruptible power supply Product Validation  Qualified for industrial applications according to the relevant tests of JEDEC (J-STD20 and JESD22) Final Datasheet Please read the Important Notice and Warnings at the end of this document Rev. 2.0, 2018-02-06 6th Generation CoolSiCTM IDDD08G65C6 Table of Content 1 Maximum ratings ............................................................................................................................... 3 2 Thermal characteristics ..................................................................................................................... 3 3 3.1 3.2 Electrical characteristics .................................................................................................................... 4 Static characteristics ............................................................................................................................... 4 AC characteristics .................................................................................................................................... 4 4 Diagrams ............................................................................................................................................ 5 5 Simplified forward characteristic ....................................................................................................... 7 6 Package outlines ................................................................................................................................ 8 Final Datasheet 2 Rev. 2.0 , 2018-02-06 6th Generation CoolSiCTM IDDD08G65C6 1 Table 3 Maximum ratings Maximum ratings Parameter Symbol Continuous forward current IF Values Unit Note/Test condition Min. Typ. Max. – – 8 TC ≤ 150 °C, D = 1 – – 13 TC ≤ 125 °C, D = 1 – – 24 TC ≤ – – 35 – – 47 TC = 25 °C, tp = 10 ms – – 37 TC = 150 °C, tp = 10 ms – – 530 TC = 25 °C, tp = 10 µs – – 11 – – 6.9 °C, D = 1 Surge-repetitive forward current, sine halfwave1 IF,RM Surge non-repetitive forward current, sine halfwave IF,SM Non-repetitive peak forward current IF,max i²t value ∫ i²dt Repetitive peak reverse voltage VRRM – – 650 V TC = 25 °C Diode dv/dt ruggedness dv/dt – – 150 V/ns VR = 0..480 V Power dissipation Ptot – – 90 W TC = 25°C, RthJC,max Operating and storage temperature Tj Tstg -55 – 175 °C – Unit Note/Test condition 2 Table 4 A A²s TC = 25 °C, tp = 10 ms TC = 150 °C, tp = 10 ms Thermal characteristics Thermal characteristics Parameter Symbol Thermal resistance, junctioncase Thermal resistance, junctionambient Values Min. Typ. Max. RthJC – 1.0 1.6 – RthJA – – 62 Device on PCB, minimal footprint K/W 1 TC = 25 °C, tp = 10 ms Thermal resistance, junctionambient for SMD version RthJA – 35 45 Soldering temperature Tsold – – 260 °C Device on 40*40*1.5 mm epoxy PCB FR4 (one layer, 70 µm thickness) with 6 cm2 copper for cathode connection and cooling, PCB vertically placed without air stream cooling Allowed only reflow soldering The surge-repetitive forward current test was performed with 1000 pulses (half-wave rectified sine with the 10 ms period). Final Datasheet 3 Rev. 2.0 , 2018-02-06 6th Generation CoolSiCTM IDDD08G65C6 3 Electrical characteristics Static characteristics 3.1 Table 5 Static characteristics Parameter Symbol DC blocking voltage VDC Diode forward voltage VF Reverse current Note/Test condition Typ. Max. 650 – – – 1.25 1.35 – 1.5 – IF = 8 A, Tj = 150 °C – 0.8 27 VR = 420 V, Tj = 25 °C – 27 – – 62 – Tj = 25 °C V µA IF = 8 A, Tj = 25 °C VR = 420 V, Tj = 125 °C VR = 420 V, Tj = 150 °C AC characteristics Parameter Symbol Total capacitive charge Qc Total capacitance Final Datasheet Unit Min. AC characteristics 3.2 Table 6 IR Values C Values Min. Typ. Max. – 12.2 – – 401 – – 24 – – 23 – 4 Unit Note/Test Condition nC VR = 400 V, Tj = 150 °C, di/dt = 200 A/µs, IF ≤ IF,MAX VR = 1 V, f = 1 MHz, Tj = 25 °C pF VR = 300 V, f = 1 MHz, Tj = 25 °C VR = 600 V, f = 1 MHz, Tj = 25 °C Rev. 2.0 , 2018-02-06 6th Generation CoolSiCTM IDDD08G65C6 Diagrams 4 IF = f(TC); RthJC,max ; Tj ≤ 175 °C; parameter: D = tP/T Ptot = f(TC) Figure 1 Power dissipation Figure 2 IF = f(VF); tp = 10 µs; parameter: Tj Figure 3 Typ. forward characteristics Final Datasheet Max. forward current IF = f(VF); tp = 10 µs; parameter: Tj Figure 4 5 Typ. forward characteristics in surge current Rev. 2.0 , 2018-02-06 6th Generation CoolSiCTM IDDD08G65C6 0 QC = f(diF/dt); Tj = 150 °C; VR = 400 V; IF ≤ IF,max Figure 5 Typ. cap. charge vs. current slope IR = f(VR); parameter: Tj Figure 6 Zth,jc = f(tP); parameter: D = tP/T Figure 7 Max. transient thermal impedance Final Datasheet Typ. reverse current vs. reverse voltage C = f(VR); Tj = 25 °C; f = 1 MHz Figure 8 6 Typ. capacitance vs. reverse voltage Rev. 2.0 , 2018-02-06 6th Generation CoolSiCTM IDDD08G65C6 EC = f(VR) Figure 9 Typ. capacitance stored energy Simplified forward characteristic 5 VF  VTH  RDIFF  I F Treshold voltage (VTH): VTH T j   0.001 T j  0.766 V Differential resistance (RDIFF): 2 RDIFF T j   A  T j  B  T j  C  A  1.54  10 -6 DIFF B  1.12  10 -4 TH C  5.89  10 -2 Tj [°C]; -55 °C ≤ Tj ≤ 175 °C; IF ≤ 8 A VF = f(IF) Figure 10 Equivalent forward current curve Final Datasheet Figure 11 7 Mathematical Equation Rev. 2.0 , 2018-02-06 6th Generation CoolSiCTM IDDD08G65C6 6 Package outlines Figure 12 Outlines of the package PG-HDSOP-10-1, dimensions in milimeters Final Datasheet 8 Rev. 2.0 , 2018-02-06 6thGenerationCoolSiCª IDDD08G65C6 RevisionHistory IDDD08G65C6 Revision:2018-02-26,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2018-02-26 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 9 Rev.2.0,2018-02-26