IGW75N60TFKSA1

TRENCHSTOP™ Series IGW75N60T q Low Loss IGBT: IGBT in TRENCHSTOP™ and Fieldstop technology C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Frequency Converters - Uninterrupted Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed  Positive temperature coefficient in VCE(sat)  Low EMI  Low Gate Charge  Qualified according to JEDEC1 for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IGW75N60T G E PG-TO247-3 VCE IC VCE(sat),Tj=25°C Tj,max Marking Package 600V 75A 1.5V 175C G75T60 PG-TO247-3 Maximum Ratings Parameter Symbol Value Collector-emitter voltage, Tj ≥ 25C VCE 600 IC 118 Unit V DC collector current, limited by Tjmax TC = 25C 85 TC = 100C A Pulsed collector current, tp limited by Tjmax ICpul s 225 Turn off safe operating area VCE = 600V, Tj = 175C, tp = 1µs - 225 Gate-emitter voltage VGE 20 V tSC 5 s Power dissipation TC = 25C Ptot 428 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - Short circuit withstand time 2) VGE = 15V, VCC  400V, Tj  150C 1 2) C 260 J-STD-020 and JESD-022 Allowed number of short circuits: 1s. IFAG IPC TD VLS 1 Rev. 2.7 10.01.2018 TRENCHSTOP™ Series IGW75N60T q Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.35 K/W RthJA 40 Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j =2 5 C - 1.5 2.0 T j =1 7 5 C - 1.9 - 4.1 4.9 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A Collector-emitter saturation voltage VCE(sat) V V G E = 15 V , I C = 75 A Gate-emitter threshold voltage VGE(th) I C = 1. 2m A, V C E = V G E Zero gate voltage collector current ICES V C E = 60 0 V , V G E = 0V µA T j =2 5 C - - 40 T j =1 7 5 C - - 5000 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 75 A - 41 - S Integrated gate resistor RGint Ω - Dynamic Characteristic Input capacitance Ciss V C E = 25 V , - 4620 - Output capacitance Coss V G E = 0V , - 288 - Reverse transfer capacitance Crss f= 1 MH z - - Gate charge QGate V C C = 48 0 V, I C =7 5 A - 137 470 - nC - 13 - nH - 687.5 - A pF V G E = 15 V LE Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) 1) IC(SC) V G E = 15 V ,t S C  5 s V C C = 4 0 0 V, T j  150C Allowed number of short circuits: 1s. IFAG IPC TD VLS 2 Rev. 2.7 10.01.2018 TRENCHSTOP™ Series IGW75N60T q Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. Typ. max. - 33 - - 36 - - 330 - - 35 - - 2.0 - - 2.5 - - 4.5 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf 1) Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=25 C, VCC=400V,IC=75A, VGE=0/15V, rG=5 , L =100nH, C=39pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. Diode from IKW75N60T ns mJ Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions Value min. Typ. max. - 32 - - 37 - - 363 - - 38 - - 2.9 - - 2.9 - - 5.8 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf 1) Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets IFAG IPC TD VLS T j=175 C, VCC=400V,IC=75A, VGE=0/15V, rG=5 , L =100nH, C=39pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. Diode from IKW75N60T 3 ns mJ Rev. 2.7 10.01.2018 TRENCHSTOP™ Series IGW75N60T q t p =1µs 200A 100A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 10µs 150A T C =80°C 100A T C =110°C Ic 50A 100Hz 10A 1ms 1kHz 10kHz 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj  175C, D = 0.5, VCE = 400V, VGE = 0/15V, rG = 5) 10ms DC 1A Ic 0A 10Hz 50µs 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=0/15V) 400W 120A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 350W 300W 250W 200W 150W 100W 90A 60A 30A 50W 0W 25°C 50°C 75°C 0A 25°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj  175C) IFAG IPC TD VLS 4 75°C 125°C TC, CASE TEMPERATURE Figure 4. DC Collector current as a function of case temperature (VGE  15V, Tj  175C) Rev. 2.7 10.01.2018 TRENCHSTOP™ Series 120A 120A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT V G E =20V 15V 90A 13V 11V 9V 60A 7V 30A 0A V G E =20V 15V 90A 13V 11V 9V 60A 7V 30A 0A 0V 1V 2V 3V 0V 80A 60A 40A T J =175°C 20A 25°C 0A 0V 2V 4V 6V 8V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) IFAG IPC TD VLS 1V 2V 3V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT IGW75N60T q 2.5V IC =150A 2.0V I C =75A 1.5V IC =37.5A 1.0V 0.5V 0.0V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.7 10.01.2018 TRENCHSTOP™ Series IGW75N60T q t, SWITCHING TIMES t, SWITCHING TIMES t d(off) 100ns tf t d(off) 100ns tf tr t d(on) t d(on) tr 10ns 10ns 0A 40A 80A  120A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, rG = 5Ω, Dynamic test circuit in Figure E)   RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 75A, Dynamic test circuit in Figure E) t, SWITCHING TIMES t d(off) 100ns tf tr t d(on) 25°C 50°C 75°C 6V m ax. typ. 5V 4V m in. 3V 2V 1V 0V -50°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 75A, rG=5Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1.2mA) 6 Rev. 2.7 10.01.2018 TRENCHSTOP™ Series *) E on and E ts include losses Ets* due to diode recovery 12.0mJ Eon* 8.0mJ Eoff 4.0mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery IGW75N60T q E ts * 8.0m J 6.0m J 4.0m J E on * 2.0m J E off 0.0m J 0.0mJ 0A 20A 40A 60A  80A 100A 120A 140A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, rG = 5Ω, Dynamic test circuit in Figure E) *) Eon and Ets include losses due to diode recovery due to diode recovery Ets* Eoff 2.0mJ Eon* 1.0mJ 0.0mJ 25°C 50°C 75°C 8m J E on * 6m J E ts * 4m J E off 2m J 0m J 300V 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 75A, rG = 5Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS  *) E on and E ts include losses 4.0mJ 3.0mJ  RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 75A, Dynamic test circuit in Figure E) E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 5.0mJ  350V 400V 450V 500V 550V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 75A, rG = 5Ω, Dynamic test circuit in Figure E) 7 Rev. 2.7 10.01.2018 TRENCHSTOP™ Series IGW75N60T q VGE, GATE-EMITTER VOLTAGE C iss c, CAPACITANCE 15V 120V 10V 480V 1nF C oss 5V C rss 100pF 0V 0nC 100nC 200nC 300nC 0V 400nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC=75 A) 10V 20V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) tSC, SHORT CIRCUIT WITHSTAND TIME IC(sc), short circuit COLLECTOR CURRENT 12µs 1000A 750A 500A 250A 0A 12V 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE  400V, Tj  150C) IFAG IPC TD VLS 10µs 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=400V, start at TJ=25°C, TJmax