TRENCHSTOP™ Series
IKW50N60T
q
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IKW50N60T
C
G
E
PG-TO247-3
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
600V
50A
1.5V
175C
K50T60
PG-TO247-3
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage, Tj ≥ 25C
VCE
600
IC
80
Unit
V
DC collector current, limited by Tjmax
TC = 25C
2)
50
TC = 100C
Pulsed collector current, tp limited by Tjmax
ICpuls
150
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
-
150
IF
100
A
Diode forward current, limited by Tjmax
TC = 25C
50
TC = 100C
Diode pulsed current, tp limited by Tjmax
IFpuls
150
Gate-emitter voltage
VGE
20
V
tSC
5
s
Power dissipation TC = 25C
Ptot
333
W
Operating junction temperature
Tj
-40...+175
Storage temperature
Tstg
-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
3)
Short circuit withstand time
VGE = 15V, VCC 400V, Tj 150C
C
260
1
J-STD-020 and JESD-022
Value limited by bond wire
3)
Allowed number of short circuits: 1s.
2)
IFAG IPC TD VLS
1
Rev. 2.6 20.09.2013
TRENCHSTOP™ Series
IKW50N60T
q
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
RthJC
0.45
K/W
RthJCD
0.8
RthJA
40
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
600
-
-
T j =2 5 C
-
1.5
2
T j =1 7 5 C
-
1.9
-
T j =2 5 C
-
1.65
2.05
T j =1 7 5 C
-
1.6
-
4.1
4.9
5.7
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V , I C = 0 .2m A
Collector-emitter saturation voltage
VCE(sat)
VF
Diode forward voltage
V
V G E = 15 V , I C = 50 A
V G E = 0V , I F = 5 0 A
Gate-emitter threshold voltage
VGE(th)
I C = 0. 8m A, V C E = V G E
Zero gate voltage collector current
ICES
V C E = 60 0 V ,
V G E = 0V
µA
T j =2 5 C
-
-
40
T j =1 7 5 C
-
-
3500
Gate-emitter leakage current
IGES
V C E = 0V , V G E =2 0 V
-
-
100
nA
Transconductance
gfs
V C E = 20 V , I C = 50 A
-
31
-
S
Integrated gate resistor
RGint
-
Ω
Dynamic Characteristic
Input capacitance
Ciss
V C E = 25 V ,
-
3140
-
Output capacitance
Coss
V G E = 0V ,
-
200
-
Reverse transfer capacitance
Crss
f= 1 MH z
-
93
-
Gate charge
QGate
V C C = 48 0 V, I C =5 0 A
-
310
-
nC
-
13
-
nH
-
458.3
-
A
pF
V G E = 15 V
LE
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
1)
IC(SC)
V G E = 15 V ,t S C 5 s
V C C = 4 0 0 V,
T j 1 50 C
Allowed number of short circuits: 1s.
IFAG IPC TD VLS
2
Rev. 2.6 20.09.2013
TRENCHSTOP™ Series
IKW50N60T
q
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
-
26
-
-
29
-
-
299
-
-
29
-
-
1.2
-
-
1.4
-
-
2.6
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j=25 C,
VCC=400V,IC=50A,
VGE=0/15V,rG=7,
L =103nH,C=39pF
L , C f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
ns
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
T j =2 5 C ,
-
143
-
ns
Diode reverse recovery charge
Qrr
V R = 4 00 V , I F = 5 0 A,
-
1.8
-
µC
Diode peak reverse recovery current
Irrm
d i F / d t =1 2 80 A / s
-
27.7
-
A
Diode peak rate of fall of reverse
recovery current during t b
d i r r /d t
-
671
-
A/s
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
-
27
-
-
33
-
-
341
-
-
55
-
-
1.8
-
-
1.8
-
-
3.6
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j=175 C,
VCC=400V,IC=50A,
VGE=0/15V,rG=7,
L =103nH,C=39pF
L , C f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
ns
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
T j =1 7 5 C
-
205
-
ns
Diode reverse recovery charge
Qrr
V R = 4 00 V , I F = 5 0 A,
-
4.3
-
µC
Diode peak reverse recovery current
Irrm
d i F / d t =1 2 80 A / s
-
40.7
-
A
Diode peak rate of fall of reverse
recovery current during t b
d i r r /d t
-
449
-
A/s
IFAG IPC TD VLS
3
Rev. 2.6 20.09.2013
TRENCHSTOP™ Series
140A
IKW50N60T
q
t p=2µs
100A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
120A
100A
T C =80°C
80A
T C =110°C
60A
40A
20A
0A
100H z
Ic
Ic
10µs
10A
50µs
1ms
DC
1A
1kH z
10kHz
100kH z
1V
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 175C, D = 0.5, VCE = 400V,
VGE = 0/15V, rG = 7)
10V
100V
10ms
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25C, Tj 175C;
VGE=0/15V)
300W
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
80A
250W
200W
150W
100W
60A
40A
20A
50W
0W
25°C
50°C
75°C
0A
25°C
100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj 175C)
IFAG IPC TD VLS
4
75°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE 15V, Tj 175C)
Rev. 2.6 20.09.2013
TRENCHSTOP™ Series
120A
V G E =20V
100A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
120A
15V
13V
80A
11V
9V
60A
7V
40A
20A
100A
V G E =20V
15V
13V
80A
11V
60A
9V
7V
40A
20A
0A
0V
1V
2V
0A
3V
0V
80 A
60 A
40 A
T J = 17 5 °C
20 A
2 5 °C
0A
0V
2V
4V
6V
2V
3V
2.5V
4V
IC =100A
2.0V
IC =50A
1.5V
IC =25A
1.0V
0.5V
0.0V
0°C
8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=10V)
IFAG IPC TD VLS
1V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
IC, COLLECTOR CURRENT
IKW50N60T
q
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
5
Rev. 2.6 20.09.2013
TRENCHSTOP™ Series
IKW50N60T
q
t d(off)
100ns
t, SWITCHING TIMES
t, SWITCHING TIMES
t d(off)
tr
tf
t d(on)
100ns
tf
tr
t d(on )
10ns
10ns
0A
20A
40 A
60A
80 A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, rG = 7Ω,
Dynamic test circuit in Figure E)
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 50A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
t d (off)
100n s
tf
tr
t d(on)
10 ns
25°C
50 °C
75°C
6V
m ax.
typ.
5V
4V
m in.
3V
2V
1V
0V
-50°C
100°C 12 5°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 50A, rG=7Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
7V
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.8mA)
6
Rev. 2.6 20.09.2013
TRENCHSTOP™ Series
*) Eon and Ets include losses
due to diode recovery
*) E on a nd E ts in clu d e lo ss e s
Ets*
Eon*
4.0mJ
Eoff
2.0mJ
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
d u e to d io d e rec o v e ry
6 .0m J
8.0mJ
6.0mJ
E ts *
5 .0m J
4 .0m J
3 .0m J
E off
2 .0m J
E on *
1 .0m J
0 .0m J
0.0mJ
0A
20A
40A
60A
80A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, rG = 7Ω,
Dynamic test circuit in Figure E)
2.0mJ
Eoff
Eon*
75°C
4m J
E on *
3m J
E ts *
2m J
E off
1m J
0m J
300V
100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 50A, rG = 7Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
due to diode recovery
3.0mJ
50°C
*) E on and E ts include losses
Ets*
0.0mJ
25°C
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 50A,
Dynamic test circuit in Figure E)
*) Eon and Ets include losses
due to diode recovery
1.0mJ
IKW50N60T
q
350V
400V
450V
500V
550V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 50A, rG = 7Ω,
Dynamic test circuit in Figure E)
7
Rev. 2.6 20.09.2013
TRENCHSTOP™ Series
IKW50N60T
q
VGE, GATE-EMITTER VOLTAGE
C iss
15V
c, CAPACITANCE
1nF
120V
480V
10V
C oss
100pF
5V
C rss
0V
0nC
100nC
200nC
0V
300nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=50 A)
10V
20V
30V
40V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
tSC, SHORT CIRCUIT WITHSTAND TIME
IC(sc), short circuit COLLECTOR CURRENT
12µs
800A
700A
600A
500A
400A
300A
200A
100A
0A
12V
14V
16V
8µs
6µs
4µs
2µs
0µs
10V
18V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gateemitter voltage
(VCE 400V, Tj 150C)
IFAG IPC TD VLS
10µs
11V
12V
13V
14V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=400V, start at TJ=25°C,
TJmax