IMBG120R090M1HXTMA1

IMBG120R090M1H IMBG120R090M1H CoolSiC™ 1200V SiC Trench MOSFET with .XT interconnection technology Features  Very low switching losses  Short circuit withstand time 3 µs  Fully controllable dV/dt  Benchmark gate threshold voltage, VGS(th) = 4.5V  Robust against parasitic turn on, 0V turn-off gate voltage can be applied  Robust body diode for hard commutation  .XT interconnection technology for best-in-class thermal performance  Package creepage and clearance distance > 6.1mm  Sense pin for optimized switching performance Drain TAB Gate pin 1 Sense pin 2 Source pin 3...7 Benefits  Efficiency improvement  Enabling higher frequency  Increased power density  Cooling effort reduction  Reduction of system complexity and cost Potential applications  Drives  Infrastructure – Charger  Energy generation - Solar string inverter and solar optimizer  Industrial power supplies - Industrial UPS Product validation Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Table 1 Key Performance and Package Parameters Type IMBG120R090M1H VDS 1200V Final Datasheet www.infineon.com ID RDS(on TC = 25°C, Rth(j-c,max) Tvj = 25°C, ID = 8.5A, VGS = 18V 26A 90mΩ Tvj,max Marking Package 175°C 12M1H090 PG-TO263-7 Please read the Important Notice and Warnings at the end of this document page 1 of 17 2.2 2020-12-11 IMBG120R090M1H CoolSiC™ 1200V SiC Trench MOSFET Table of contents 1200V SiC Trench MOSFET Table of contents Features ........................................................................................................................................ 1 Benefits ......................................................................................................................................... 1 Potential applications ..................................................................................................................... 1 Product validation .......................................................................................................................... 1 Table of contents ............................................................................................................................ 2 1 Maximum ratings ................................................................................................................... 3 2 Thermal resistances ............................................................................................................... 4 3 3.1 3.2 3.3 Electrical Characteristics ........................................................................................................ 5 Static characteristics ............................................................................................................................... 5 Dynamic characteristics .......................................................................................................................... 6 Switching characteristics ........................................................................................................................ 7 4 Electrical characteristic diagrams ............................................................................................ 8 5 Package drawing................................................................................................................... 14 6 Test conditions ..................................................................................................................... 15 Revision history............................................................................................................................. 16 Final Datasheet 2 of 17 2.2 2020-12-11 IMBG120R090M1H CoolSiC™ 1200V SiC Trench MOSFET Maximum ratings 1 Maximum ratings For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. Table 2 Maximum ratings Parameter Symbol Value Unit Drain-source voltage, Tvj ≥ 25°C VDSS 1200 V DC drain current for Rth(j-c,max), limited by Tvjmax, VGS = 18V, TC = 25°C TC = 100°C ID 26 18 A Pulsed drain current, tp limited by Tvjmax, VGS = 18V ID,pulse1 65 A DC body diode forward current for Rth(j-c,max), limited by Tvjmax, VGS = 0V TC = 25°C TC = 100°C ISD Pulsed body diode current, tp limited by Tvjmax ISD,pulse1 65 Gate-source voltage2 Max transient voltage, < 1% duty cycle Recommended turn-on gate voltage Recommended turn-off gate voltage VGS VGS,on VGS,off -7… 23 15… 18 0 Short-circuit withstand time VDD = 800V, VDS,peak < 1200V, VGS,on = 15V, Tj,start = 25°C tSC 3 Power dissipation, limited by Tvjmax TC = 25°C TC = 100°C Ptot 136 68 W Virtual junction temperature Tvj -55… 175 °C Storage temperature Tstg -55… 150 °C Soldering temperature Reflow soldering (MSL1 according to JEDEC J-STD-020) Tsold 260 °C 28 16 A A V µs verified by design Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure sound operation of the device over the planned lifetime. 1 2 Final Datasheet 3 of 17 2.2 2020-12-11 IMBG120R090M1H CoolSiC™ 1200V SiC Trench MOSFET Thermal resistances 2 Thermal resistances Table 3 Parameter Symbol MOSFET/body diode thermal resistance, junction – case Rth(j-c) Thermal resistance, junction – ambient Rth(j-a) Final Datasheet Value Conditions leaded 4 of 17 Unit min. typ. max. - 0.82 1.1 K/W - - 62 K/W 2.2 2020-12-11 IMBG120R090M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical Characteristics 3 Electrical Characteristics 3.1 Static characteristics Table 4 Static characteristics (at Tvj = 25°C, unless otherwise specified) Parameter Drain-source on-state resistance Symbol RDS(on) Body diode forward voltage VSD Gate-source threshold voltage VGS(th) Conditions Value VGS = 18V, ID = 8.5A, Tvj = 25°C Tvj = 100°C Tvj = 175°C VGS = 15V, ID = 8.5A, Tvj = 25°C VGS = 0V, ISD = 8.5A Tvj = 25°C Tvj = 100°C Tvj = 175°C Unit min. typ. max. - 90 114 170 125 - - 120 160 - 4.1 4.0 3.9 5.2 - mΩ V (tested after 1 ms pulse at VGS = 20V) ID = 3.7mA, VDS = VGS Tvj = 25°C Tvj =175°C 3.5 - 4.5 3.6 5.7 - VGS = 0V, VDS = 1200V Tvj = 25°C Tvj = 175°C - 0.5 1.6 165 - µA VGS = 23V, VDS = 0V - - 100 nA VGS = -7V, VDS = 0V - - -100 nA V Zero gate voltage drain current IDSS Gate-source leakage current IGSS Transconductance gfs VDS = 20V, ID = 8.5A - 4.7 - S Internal gate resistance RG,int f = 1MHz, VAC = 25mV - 9 - Ω Final Datasheet 5 of 17 2.2 2020-12-11 IMBG120R090M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical Characteristics 3.2 Dynamic characteristics Table 5 Dynamic characteristics (at Tvj = 25°C, unless otherwise specified) Parameter Symbol Input capacitance Ciss Output capacitance Coss Reverse capacitance Crss Coss stored energy Eoss Total gate charge QG Gate to source charge QGS,pl Gate to drain charge QGD Final Datasheet Value Conditions VDD = 800V, VGS = 0V, f = 1MHz, VAC = 25mV VDD = 800V, ID = 8.5A, VGS = 0/18V, turn-on pulse 6 of 17 min. typ. max. - 763 - - 39 - - 4.3 - - - - 15 23 - 5.9 - - 4.8 - Unit pF µJ nC 2.2 2020-12-11 IMBG120R090M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical Characteristics 3.3 Switching characteristics Table 6 Switching characteristics, Inductive load 3 Parameter Symbol Conditions Value Unit min. typ. max. - 7.9 - - 3.1 - - 18 - - 10 - - 96 - - 20 - - 116 - - 127 - nC - 1.9 - A - 7.9 - - 7.3 - - 18 - - 10 - - 144 - - 24 - - 168 - - 158 - nC - 2.5 - A MOSFET Characteristics, Tvj = 25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Etot VDD = 800V, ID = 8.5A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, diode: body diode at VGS = 0V see Fig. E ns µJ Body Diode Characteristics, Tvj = 25°C Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm VDD = 800V, ISD = 8.5A, VGS at diode = 0V, dif/dt = 1000A/µs, Qrr includes also QC , see Fig. C MOSFET Characteristics, Tvj = 175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Etot VDD = 800V, ID = 8.5A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, diode: body diode at VGS = 0V see Fig. E ns µJ Body Diode Characteristics, Tvj = 175°C Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm VDD = 800V, ISD = 8.5A, VGS at diode = 0V, dif/dt = 1000A/µs, Qrr includes also QC , see Fig. C The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement test setup and package. 3 Final Datasheet 7 of 17 2.2 2020-12-11 IMBG120R090M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams 4 Electrical characteristic diagrams 160 80 140 60 120 not for linear use Ptot [W] IDS [A] 100 40 80 60 40 20 Pmax stat 20 Ptyp 0 0 0 Figure 1 400 800 VDS [V] 0 1200 Figure 2 Safe operating area (SOA) (VGS = 0/18V, Tc = 25°C, Tj ≤ 175°C) 25 50 75 100 125 150 175 TC [ C] Power dissipation as a function of case temperature limited by bond wire (Ptot = f(TC)) 45 35 40 30 35 30 20 ISD [A] IDS [A] 25 15 25 20 15 10 10 Imax 5 Imax 5 Rth_typ Rth_typ 0 0 0 Figure 3 Final Datasheet 25 50 75 100 125 150 175 TC [ C] Maximum DC drain to source current as Figure 4 a function of case temperature limited by bond wire (IDS = f(TC)) 8 of 17 0 25 50 75 100 125 150 175 TC [ C] Maximum source to drain current as a function of case temperature limited by bond wire (ISD = f(TC), VGS = 0V) 2.2 2020-12-11 IMBG120R090M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams 120 6 Tvj=25°C VGS (th) [V] 90 IDS [A] 5 Tvj=175°C 60 4 3 2 30 1 0 0 0 15 20 Typical transfer characteristic (IDS = f(VGS), VDS = 20V, tP = 20µs) 120 -50 Figure 6 60 0 50 100 Tvj [ C] 150 Typical gate-source threshold voltage as a function of junction temperature (VGS(th) = f(Tvj), IDS = 3.7mA, VGS = VDS) 70 20V 18V 16V 15V 14V 12V 10V 8V 6V 90 IDS [A] 10 VGS [V] 20V 18V 16V 15V 14V 12V 10V 8V 6V 60 50 IDS [A] Figure 5 5 40 30 20 30 10 0 0 0 Figure 7 Final Datasheet 4 8 12 VDS [V] 16 0 20 Typical output characteristic, VGS as parameter (IDS = f(VDS), Tvj=25°C, tP = 20µs) Figure 8 9 of 17 4 8 12 VDS [V] 16 20 Typical output characteristic, VGS as parameter (IDS = f(VDS), Tvj=175°C, tP = 20µs) 2.2 2020-12-11 IMBG120R090M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams 300 18 16 VGS = 15V 14 12 200 VGS [V] RDS (ON) [mOhm] 250 VGS = 18V 150 10 8 6 100 4 2 50 0 -2 0 -50 Figure 9 0 50 100 Tvj [ C] 0 150 Typical on-resistance as a function of junction temperature (RDS(on) = f(Tvj), IDS = 8.5A) Figure 10 5 10 15 QG [nC] 20 25 Typical gate charge (VGS = f(QG), IDS = 8.5A, VDS = 800V, turn-on pulse) 6 1000 5 100 VSD [V] C [pF] 4 10 3 2 Ciss Coss 1 Crss 1 1 10 100 0 1000 -50 VDS[V] Figure 11 Final Datasheet Typical capacitance as a function of drain-source voltage (C = f(VDS), VGS = 0V, f = 1MHz) Figure 12 10 of 17 0 50 100 Tvj [ C] 150 Typical body diode forward voltage as function of junction temperature (VSD=f(Tvj), VGS=0V, ISD=8.5A) 2.2 2020-12-11 IMBG120R090M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams 70 70 VGS=18V VGS=15V 50 50 40 40 30 VGS=0V 20 30 VGS=0V 20 VGS=-2V VGS=-2V 10 10 0 0 0 Figure 13 2 4 6 VSD [V] 8 0 10 Typical body diode forward current as function of forward voltage, VGS as parameter (ISD = f(VSD), Tvj = 25°C, tP = 20µs) Figure 14 210 2 4 6 VSD [V] 400 Etot 180 Eon Eon 150 Eoff 300 120 90 60 8 10 Typical body diode forward current as function of forward voltage, VGS as parameter (ISD = f(VSD), Tvj = 175°C, tP = 20µs) Etot E [µJ] E [µJ] VGS=18V 60 VGS=15V ISD [A] ISD [A] 60 Eoff 200 100 30 0 0 25 Figure 15 Final Datasheet 50 75 100 125 150 175 Tvj [ C] Typical switching energy losses as a function of junction temperature (E = f(Tvj), VDD = 800V, VGS = 0V/18V, RG,ext = 2Ω, ID = 8.5A, ind. load, test circuit in Fig. E, diode: body diode at VGS = 0V) 0 Figure 16 11 of 17 5 10 ID [A] 15 20 Typical switching energy losses as a function of drain-source current (E = f(IDS), VDD = 800V, VGS = 0V/18V, RG,ext = 2Ω, Tvj = 175°C, ind. load, test circuit in Fig. E, diode: body diode at VGS = 0V) 2.2 2020-12-11 IMBG120R090M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams 600 80 Etot Eon Eoff td(on) tr td(off) 60 E [µJ] Time [ns] 400 200 tf 40 20 0 0 0 Figure 17 20 40 RG [Ohm] 0 60 Typical switching energy losses as a function of gate resistance (E = f(RG,ext), VDD = 800V, VGS = 0V/18V, ID = 8.5A, Tvj = 175°C, ind. load, test circuit in Fig. E, diode: body diode at VGS = 0V) Figure 18 20 40 RG [Ohm] 60 Typical switching times as a function of gate resistor (t = f(RG,ext), VDD = 800V, VGS = 0V/18V, ID = 8.5A, Tvj = 175°C, ind. load, test circuit in Fig. E, diode: body diode at VGS = 0V) 20 0.5 T = 175°C T = 25°C 15 0.3 IRRM [A] QRR [µC] 0.4 0.2 10 5 0.1 T = 175°C T = 25°C 0 0.0 0 Figure 19 Final Datasheet 2000 4000 diF /dt[A/µs] 0 6000 Typical reverse recovery charge as a function of diode current slope (Qrr = f(dif/dt), VDD = 800V, VGS = 0V/18V, ID = 8.5A, ind. load, test circuit in Fig.E, body diode at VGS = 0V) Figure 20 12 of 17 2000 4000 diF /dt[A/µs] 6000 Typical reverse recovery current as a function of diode current slope (Irrm = f(dif/dt), VDD = 800V, VGS = 0V/18V, ID = 8.5A, ind. load, test circuit in Fig.E, body diode at VGS = 0V) 2.2 2020-12-11 IMBG120R090M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams 1E1 1E0 Zthjc [K/W] 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse 1E-1 i: ri: [K/W] ti: [s] 1 1.8E-01 1.7E-04 2 5.5E-01 9.4E-03 3 3.1E-01 1.6E-03 4 6.2E-02 1.1E-05 1E-2 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 tp [s] Figure 21 Final Datasheet Max. transient thermal resistance (MOSFET/diode) (Zth(j-c,max) = f(tP), parameter D = tp/T, thermal equivalent circuit in Fig. D) 13 of 17 2.2 2020-12-11 IMBG120R090M1H CoolSiC™ 1200V SiC Trench MOSFET Package drawing 5 Package drawing Figure 22 Package drawing Final Datasheet 14 of 17 2.2 2020-12-11 IMBG120R090M1H CoolSiC™ 1200V SiC Trench MOSFET Test conditions 6 Test conditions Figure 23 Test conditions Final Datasheet 15 of 17 2.2 2020-12-11 IMBG120R090M1H 1200V SiC Trench MOSFET Revision history Revision history Document version Date of release Description of changes 2.1 2020-09-01 Final Datasheet 2.2 2020-12-11 Correction of circuit symbol on page 1 Final Datasheet 16 of 17 2.2 2020-12-11 Trademarks All referenced product or service names and trademarks are the property of their 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