IPA60R385CPXKSA1

IPA60R385CP CoolMOS® Power Transistor Product Summary Features V =L฀฀1[%^Ri V฀)DL:HI฀;>I฀/ HG฀M฀.@ /.) R =L"`_#%^Ri@T [฀Y V฀2AIG6฀ADL฀C6CI; Halogen free mold compound I@&MH++) CoolMOS is specially designed for: V฀%6G9฀HL>I8=>C;>:9 Parameter DCI>CJDJH฀9G6>C฀8JGG:CI +# Symbol Conditions I= Value T C฀8JGG:CI,# I =%af]dV T C  $6I:฀G:H>HI6C8: Rev. 2.3 R@ Page 2 " 2018-02-14 IPA60R385CP Parameter Values Symbol Conditions Unit min. typ. max. & 02) & & ,1 & & ,/ & Dynamic characteristics &CEJI฀86E68>I6C8: C Zdd ,JIEJI฀86E68>I6C8: C `dd ";;:8I>K:฀DJIEJI฀86E68>I6C8: ฀:C:GK:฀DJIEJI฀86E68>I6C8: ฀I>B:฀ cV]ReVU0# C `"ec# & 2/ & 1JGC DC฀9:A6N฀I>B: t U"`_# & *) & />H:฀I>B: tc & . & 1JGC D;;฀9:A6N฀I>B: t U"`WW# & -) & #6AA฀I>B: tW & . & $6I:฀ID฀HDJG8:฀8=6GC฀8=6GB>I:9฀DCAN฀7N฀B6M>BJB฀I:BE:G6IJG: ,# ฀-JAH:฀L>9I=฀t a฀A>B>I:9฀7N฀T [%^Ri -# ฀/:E:I>I>K:฀6K6A6C8=:฀86JH:H฀699>I>DC6A฀EDL:G฀ADHH:H฀I=6I฀86C฀7:฀86A8JA6I:9฀6H฀P 9O6E 9K$f. .# ฀&L="B= ฀9>9I" [H ฀3=H฀6฀;>M:9฀86E68>I6C8:฀I=6I฀K:H฀I=:฀H6B:฀HIDG:9฀:C:GA:฀V =L฀>H฀G>H>CI:9฀7N฀DC HI6I: cVdZdeR_TV 30 ฀[H 25  ฀[H 1  ฀[H 20 I D [A] P tot [W] 10 ฀BH 15  ฀BH 100 10 =< 5 0 10 0 40 80 120 -1 160 100 101 102 103 V DS [V] T C [°C] 3 Max. transient thermal impedance 4 Typ. output characteristics Z eYCC