IPA95R450P7
MOSFET
950VCoolMOSªP7SJPowerDevice
PG-TO220FP
Thelatest950VCoolMOS™P7seriessetsanewbenchmarkin950V
superjunctiontechnologiesandcombinesbest-in-classperformancewith
stateoftheartease-of-use,resultingfromInfineon’sover18years
pioneeringsuperjunctiontechnologyinnovation.
Features
•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss
•Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V
•IntegratedZenerDiodeESDprotection
•Best-in-classCoolMOS™qualityandreliability
•Fullyoptimizedportfolio
Drain
Pin 2
Benefits
•Best-in-classperformance
•Enablinghigherpowerdensitydesigns,BOMsavingsandlower
assemblycosts
•Easytodriveandtoparallel
•BetterproductionyieldbyreducingESDrelatedfailures
•Lessproductionissuesandreducedfieldreturns
•Easytoselectrightpartsforfinetuningofdesigns
*1
Gate
Pin 1
*2
*1: Internal body diode
*2: Integrated ESD diode
Source
Pin 3
Potentialapplications
RecommendedforflybacktopologiesforLEDLighting,lowpower
ChargersandAdapters,SmartMeter,AUXpowerandIndustrialpower.
AlsosuitableforPFCstageinConsumerandSolarapplications.
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C
950
V
RDS(on),max
0.45
Ω
Qg,typ
35
nC
ID
14
A
Eoss @ 500V
2.9
µJ
VGS(th),typ
3
V
ESD class (HBM)
2
-
Type/OrderingCode
Package
IPA95R450P7
PG-TO 220 FullPAK
Final Data Sheet
Marking
95R450P7
1
RelatedLinks
see Appendix A
Rev.2.3,2020-01-31
950VCoolMOSªP7SJPowerDevice
IPA95R450P7
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.2.3,2020-01-31
950VCoolMOSªP7SJPowerDevice
IPA95R450P7
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
14
8.6
A
TC=25°C
TC=100°C
-
43
A
TC=25°C
-
-
29
mJ
ID=1.8A; VDD=50V; see table 10
EAR
-
-
0.36
mJ
ID=1.8A; VDD=50V; see table 10
Application (Flyback) relevant
avalanche current, single pulse3)
IAS
-
7.0
-
A
measured with standard leakage
inductance of transformer of 10µH
MOSFET dv/dt ruggedness
dv/dt
-
-
100
V/ns
VDS=0...400V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation
Ptot
-
-
30
W
TC=25°C
Storage temperature
Tstg
-55
-
150
°C
-
Operating junction temperature
Tj
-55
-
150
°C
-
Mounting torque
-
-
-
50
Ncm M2.5 screws
IS
-
-
5.1
A
TC=25°C
Diode pulse current
IS,pulse
-
-
43
A
TC=25°C
Reverse diode dv/dt4)
dv/dt
-
-
1
V/ns
VDS=0...400V,ISD
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