IPB120N04S4-04
OptiMOS™-T2 Power-Transistor
Product Summary
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
V DS
40
V
R DS(on),max
3.6
mW
ID
120
A
• 175°C operating temperature
PG-TO263-3-2
• Green package (lead free)
• 100% Avalanche tested
Type
Package
Ordering Code
Marking
IPB120N04S4-04
PG-TO263-3-2
-
4N0404
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Conditions
Value
T C=25°C, V GS=10V
120
T C=100°C, V GS=10V1)
91
Unit
A
Pulsed drain current1)
I D,pulse
T C=25°C
480
Avalanche energy, single pulse
E AS
I D=60A
75
mJ
Avalanche current, single pulse
I AS
-
120
A
Gate source voltage
V GS
-
±20
V
Power dissipation
P tot
T C=25°C
79
W
Operating and storage temperature
T j, T stg
-
-55 ... +175
°C
-
55/175/56
IEC climatic category; DIN IEC 68-1
Rev. 1.1
page 1
2014-04-07
IPB120N04S4-04
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics1)
Thermal resistance, junction - case
R thJC
-
-
1.9
Thermal resistance, junction ambient, leaded
R thJA
-
-
62
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm2 cooling area2)
-
-
40
40
-
-
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= 1mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=40µA
2.0
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=40V, V GS=0V,
T j=25°C
-
0.01
1
-
3
36
V DS=18V, V GS=0V,
T j=85 °C2)
V
µA
Gate-source leakage current
I GSS
V GS=20V, V DS=0V
-
-
100
nA
Drain-source on-state resistance
RDS(on)
V GS=10V, I D=100A
-
3.2
3.6
mΩ
Rev. 1.1
page 2
2014-04-07
IPB120N04S4-04
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
3150
4100
-
770
1000
Dynamic characteristics1)
D-85579 Neubiberg
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
30
70
Turn-on delay time
t d(on)
-
11
-
Rise time
tr
-
18
-
Turn-off delay time
t d(off)
-
9
-
Fall time
tf
-
15
-
Gate to source charge
Q gs
-
20
26
Gate to drain charge
Q gd
-
7
16
Gate charge total
Qg
-
42
55
Gate plateau voltage
V plateau
-
6.0
-
V
-
-
120
A
-
-
480
V GS=0V, V DS=25V,
f =1MHz
V DD=20V, V GS=10V,
I D=120A, R G=3.5W
pF
ns
Gate Charge Characteristics1)
V DD=32V, I D=120A,
V GS=0 to 10V
nC
Reverse Diode
Diode continous forward current1)
IS
Diode pulse current1)
I S,pulse
Diode forward voltage
V SD
V GS=0V, I F=100A,
T j=25°C
-
0.9
1.3
V
Reverse recovery time1)
t rr
V R=20V, I F=I S,
di F/dt =100A/µs
-
45
-
ns
Reverse recovery charge1)
Q rr
-
50
-
nC
1)
T C=25°C
Defined by design. Not subject to production test.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2014-04-07
IPB120N04S4-04
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 6 V
80
120
100
60
I D [A]
P tot [W]
80
40
60
40
20
20
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
101
1000
1 µs
limited by on-state
resistance
10 µs
100
Z thJC [K/W]
I D [A]
100
100 µs
0.1
10-1
10
0.5
1 ms
0.05
0.01
single pulse
10-2
1
0.1
1
10
100
t p [s]
V DS [V]
Rev. 1.1
page 4
2014-04-07
IPB120N04S4-04
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = (I D); T j = 25 °C
parameter: V GS
parameter: V GS
12
500
5.5 V
10 V
6V
10
400
8
R DS(on) [mW]
I D [A]
300
7V
200
6
6.5 V
7V
4
6.5 V
10 V
6V
100
2
5.5 V
5V
0
0
0
2
4
6
0
8
40
V DS [V]
80
120
I D [A]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V
R DS(on) = f(T j); I D = 100 A; V GS = 10 V
parameter: T j
240
6
200
5
R DS(on) [mW]
I D [A]
160
120
4
80
3
40
175 °C
25 °C
-55 °C
2
0
2
4
6
8
-20
20
60
100
140
180
T j [°C]
V GS [V]
Rev. 1.1
-60
page 5
2014-04-07
IPB120N04S4-04
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
104
4
Ciss
3.5
Coss
400µA
103
C [pF]
V GS(th) [V]
3
40µA
2.5
Crss
102
2
1.5
101
1
-60
-20
20
60
100
140
0
180
10
T j [°C]
20
30
40
100
1000
V DS [V]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
IF = f(VSD)
I AS = f(t AV)
parameter: T j
parameter: Tj(start)
1000
100
I F [A]
I AV [A]
25°C
175 °C
25 °C
100°C
150°C
10
1
0.4
0.7
1
1.3
V SD [V]
Rev. 1.1
0.1
1
10
t AV [µs]
page 6
2014-04-07
IPB120N04S4-04
Published by
Infineon Technologies AG
Am Campeon 1-12
D-85579 Neubiberg
© Infineon Technologies AG 2014
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies Office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.1
page 7
2014-04-07
IPB120N04S4-04
Revision History
Date
Version
Rev. 1.1
Changes
1.0
22.10.2013 Final Datasheet
1.1
07.04.2014 Added Avalanche Current
page 8
2014-04-07