IPB65R110CFD7
MOSFET
650VCoolMOSªCFD7SJPowerDevice
D²PAK
Thelatest650VCoolMOS™CFD7extendsthevoltageclassofferingof
theCFD7familyandisasuccessortothe650VCoolMOS™CFD2.
Resultingfromimprovedswitchingperformanceandexcellentthermal
behavior,650VCooMOS™CFD7offershighestefficiencyinresonant
switchingtopologies,suchasLLCandphase-shift-full-bridge(ZVS).As
partofInfineon’sfastbodydiodeportfolio,thisnewproductseriesblends
alladvantagesofafastswitchingtechnologytogetherwithsuperiorhard
commutationrobustness.TheCoolMOS™CFD7technologymeets
highestefficiencyandreliabilitystandardsandfurthermoresupportshigh
powerdensitysolutions.
tab
2
1
3
Features
Drain
Pin 2, Tab
•Ultra-fastbodydiode
•650Vbreakdownvoltage
•Best-in-classRDS(on)
•Reducedswitchinglosses
•LowRDS(on)dependencyovertemperature
*1
Gate
Pin 1
*2
*1: Internal body diode
*2: Integrated ESD diode
Source
Pin 3
Benefits
•Excellenthardcommutationruggedness
•Extrasafetymarginfordesignswithincreasedbusvoltage
•Enablingincreasedpowerdensitysolutions
•OutstandinglightloadefficiencyinindustrialSMPSapplications
•ImprovedfullloadefficiencyinindustrialSMPSapplications
•PricecompetitivenessoverpreviousCoolMOS™families
Potentialapplications
SuitableforSoftSwitchingtopologies
Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications–Server,
Telecom,EVCharging,Solar
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
700
V
RDS(on),max
110
mΩ
Qg,typ
41
nC
ID,pulse
82
A
Eoss @ 400V
5.8
µJ
Body diode diF/dt
1300
A/µs
Type/OrderingCode
Package
IPB65R110CFD7
PG-TO263-3
Final Data Sheet
Marking
65R110F7
1
RelatedLinks
see Appendix A
Rev.2.0,2020-10-21
650VCoolMOSªCFD7SJPowerDevice
IPB65R110CFD7
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.2.0,2020-10-21
650VCoolMOSªCFD7SJPowerDevice
IPB65R110CFD7
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
22
14
A
TC=25°C
TC=100°C
-
82
A
TC=25°C
-
-
97
mJ
ID=4.7A; VDD=50V; see table 10
EAR
-
-
0.48
mJ
ID=4.7A; VDD=50V; see table 10
Avalanche current, single pulse
IAS
-
-
4.7
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
120
V/ns
VDS=0...400V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation
Ptot
-
-
114
W
TC=25°C
Storage temperature
Tstg
-55
-
150
°C
-
Operating junction temperature
Tj
-55
-
150
°C
-
-
-
-
-
Ncm -
IS
-
-
22
A
TC=25°C
Diode pulse current
IS,pulse
-
-
82
A
TC=25°C
Reverse diode dv/dt3)
dv/dt
-
-
70
V/ns
VDS=0...400V,ISD
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