IPD082N10N3G

OptiMOS™3 Power-Transistor IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) VDS 100 V RDS(on),max (TO 252) 8.2 mW ID 80 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Package PG-TO220-3 PG-TO262-3 PG-TO263-3 PG-TO252-3 Marking 086N10N 086N10N 083N10N 082N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 80 T C=100 °C 58 Unit A Pulsed drain current2) I D,pulse T C=25 °C 320 Avalanche energy, single pulse E AS I D=73 A, R GS=25 W 110 mJ Gate source voltage V GS ±20 V Power dissipation P tot 125 W Operating and storage temperature T j, T stg -55 ... 175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 1) 2) 55/175/56 J-STD20 and JESD22 See figure 3 Rev. 2.6 page 1 2013-07-09 Parameter IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Values Symbol Conditions Unit min. typ. max. - - 1.2 minimal footprint - - 62 6 cm2 cooling area3) - - 50 100 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, R thJA junction - ambient K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=75 µA 2 2.7 3.5 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=100 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=73 A, TO 220, TO 262 - 7.4 8.6 mW V GS=10 V, I D=73 A, TO263 - 7.2 8.3 V GS=10 V, I D=73 A, TO 252 - 7 8.2 V GS=6 V, I D=36 A, TO 220, TO 262 - 9.3 15.4 V GS=6 V, I D=36 A, TO 263 - 9.0 15.1 V GS=6 V, I D=36 A, TO 252 - 8.9 15 - 1 - W 45 89 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=80 A 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.6 page 2 2013-07-09 Parameter IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Values Symbol Conditions Unit min. typ. max. - 2990 3980 - 523 696 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 21 - Turn-on delay time t d(on) - 18 - Rise time tr - 42 - Turn-off delay time t d(off) - 31 - Fall time tf - 8 - Gate to source charge Q gs - 15 - Gate to drain charge Q gd - 8 - Switching charge Q sw - 14 - Gate charge total Qg - 42 55 Gate plateau voltage V plateau - 4.9 - Output charge Q oss - 55 73 nC - - 80 A - - 320 - 1.0 1.2 V - 71 - ns - 123 - nC V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=73 A, R G,ext=1.6 W pF ns Gate Charge Characteristics4) V DD=50 V, I D=73 A, V GS=0 to 10 V V DD=50 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=50 V, I F=73 A, di F/dt =100 A/µs See figure 16 for gate charge parameter definition Rev. 2.6 page 3 2013-07-09 IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 150 100 125 80 100 ID [A] Ptot [W] 60 75 40 50 20 25 0 0 0 50 100 150 200 0 50 TC [°C] 100 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 1 µs limited by on-state resistance 10 µs 102 100 µs 100 ZthJC [K/W] 0.5 ID [A] 1 ms 101 10 ms 0.2 0.1 0.05 10-1 DC 0.02 100 0.01 single pulse 10-1 10-2 10-1 100 101 102 103 10-4 10-3 10-2 10-1 100 tp [s] VDS [V] Rev. 2.6 10-5 page 4 2013-07-09 IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 300 10 V 18 4.5 V 250 7.5 V 15 5V RDS(on) [mW] 200 ID [A] 6V 150 5.5 V 12 6V 9 7.5 V 10 V 100 6 5V 50 3 4.5 V 0 0 0 1 2 3 4 5 0 20 40 VDS [V] 60 80 100 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 150 120 100 100 ID [A] gfs [S] 80 50 60 40 25 °C 20 175 °C 0 0 0 2 4 6 8 VGS [V] Rev. 2.6 0 40 80 120 ID [A] page 5 2013-07-09 IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=73 A; V GS=10 V; TO 220 V GS(th)=f(T j); V GS=V DS parameter: I D 20 4 18 3.5 16 3 750 µA 2.5 12 VGS(th) [V] RDS(on) [mW] 14 98 % 10 typ 8 75 µA 2 1.5 6 1 4 0.5 2 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss 175 °C, 98% 103 102 Coss 25 °C 25 °C, 98% IF [A] C [pF] 175 °C 102 101 Crss 101 100 0 20 40 60 80 VDS [V] Rev. 2.6 0 0.5 1 1.5 2 VSD [V] page 6 2013-07-09 IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=73 A pulsed parameter: T j(start) parameter: V DD 100 10 8 80 V 25 °C 50 V 100 °C 20 V VGS [V] IAS [A] 6 150 °C 10 4 2 1 0 1 10 100 1000 0 10 tAV [µs] 20 30 40 50 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 110 V GS Qg VBR(DSS) [V] 105 100 V gs(th) 95 Q g(th) Q sw Q gs 90 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.6 page 7 2013-07-09 IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G PG-TO220-3: Outline Rev. 2.6 page 8 2013-07-09 IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G PG-TO262-3 Rev. 2.6 page 9 2013-07-09 IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G PG-TO-263 (D²-Pak) Rev. 2.6 page 10 2013-07-09 IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G PG-TO-252 (D-Pak) Rev. 2.6 page 11 2013-07-09 IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.6 page 12 2013-07-09