IPD70N12S311ATMA1

IPD70N12S3-11 OptiMOS®-T Power-Transistor Product Summary VDS 120 V RDS(on),max 11.1 mW ID 70 A Features • OptiMOS™ - power MOSFET for automotive applications PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD70N12S3-11 PG-TO252-3-11 QN1211 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions Value T C=25°C, V GS=10V 70 T C=100°C, V GS=10V1) 48 Unit A Pulsed drain current1) I D,pulse T C=25°C 280 Avalanche energy, single pulse1) E AS I D=35A 410 mJ Avalanche current, single pulse I AS - 70 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25 °C 125 W Operating and storage temperature T j, T stg - -55 ... +175 °C Rev. 1.0 page 1 2016-06-20 IPD70N12S3-11 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics1) Thermal resistance, junction - case R thJC - - - 1.2 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area2) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 120 - - Gate threshold voltage V GS(th) V DS=V GS, I D=83µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=120V, V GS=0V, T j=25°C - 0.01 0.1 T j=125°C1) - 1 10 V DS=120V, V GS=0V, V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10V, I D=70A - 9.2 11.1 mW Rev. 1.0 page 2 2016-06-20 IPD70N12S3-11 Parameter Symbol Values Conditions Unit min. typ. max. - 3350 4355 - 940 1222 Dynamic characteristics1) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 105 158 Turn-on delay time t d(on) - 17 - Rise time tr - 8 - Turn-off delay time t d(off) - 25 - Fall time tf - 8 - Gate to source charge Q gs - 18 23 Gate to drain charge Q gd - 16 24 Gate charge total Qg - 51 65 Gate plateau voltage V plateau - 5.5 - V - - 70 A - - 280 V GS=0V, V DS=25V, f =1MHz V DD=20V, V GS=10V, I D=70A, R G=3.5W pF ns Gate Charge Characteristics1) V DD=96V, I D=70A, V GS=0 to 10V nC Reverse Diode Diode continous forward current1) IS Diode pulse current1) I S,pulse Diode forward voltage V SD V GS=0V, I F=70A, T j=25°C 0.6 1 1.2 V Reverse recovery time1) t rr V R=60V, I F=50A, di F/dt =100A/µs - 100 - ns Reverse recovery charge1) Q rr - 265 - nC 1) T C=25°C Defined by design. Not subject to production test. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2016-06-20 IPD70N12S3-11 1 Power dissipation 2 Drain current P tot = f(T C); V GS = 10 V I D = f(T C); V GS = 10 V 140 80 70 120 60 100 ID [A] Ptot [W] 50 80 40 60 30 40 20 20 10 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 100 10 µs 0.5 100 ID [A] ZthJC [K/W] 100 µs 0.1 10-1 0.05 0.01 1 ms 10 10-2 single pulse 1 10-3 0.1 1 10 100 1000 VDS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2016-06-20 IPD70N12S3-11 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 280 35 10 V 5.5 V 6V 240 7V 200 160 RDS(on) [mΩ] 25 ID [A] 6.5 V 120 6V 15 80 6.5 V 5.5V 7V 40 10 V 5V 0 5 0 1 2 3 4 5 0 20 40 VDS [V] 60 80 100 120 140 180 ID [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 70 A; V GS = 10 V parameter: T j 250 25 -55 °C 200 20 25 °C RDS(on) [mW] ID [A] 150 175 °C 100 10 50 0 3 4 5 6 7 VGS [V] Rev. 1.0 15 5 -60 -20 20 60 100 Tj [°C] page 5 2016-06-20 IPD70N12S3-11 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 Ciss VGS(th) [V] 3 C [pF] 3.5 400 µA 103 Coss 80 µA 2.5 102 2 Crss 1.5 101 1 -60 -20 20 60 100 140 0 180 5 10 15 20 25 30 VDS [V] Tj [°C] 11 Typical forward diode characteristics 12 Typ. avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 100 103 25 °C 100 °C 102 IF [A] IAV [A] 150 °C 175 °C 101 25 °C 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.0 10 1 0.1 1 10 100 1000 tAV [µs] page 6 2016-06-20 IPD70N12S3-11 13 Typical avalanche energy 14 Typ. drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 135 900 17.5 A 800 130 700 VBR(DSS) [V] EAS [mJ] 600 500 35 A 400 125 120 300 70 A 200 115 100 110 0 25 75 125 -55 175 -15 Tj [°C] 25 65 105 145 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 70 A pulsed parameter: V DD 10 V GS 9 Qg 24 V 8 96 V 7 VGS [V] 6 5 V gs(th) 4 3 2 Q g(th) Q sw Q gate 1 Q gs 0 0 10 20 30 40 Q gd 50 Qgate [nC] Rev. 1.0 page 7 2016-06-20 IPD70N12S3-11 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2016 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non‑infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2016-06-20 IPD70N12S3-11 Revision History Version Date Changes Revision 1.0 Rev. 1.0 20.06.2016 Final Data Sheet page 9 2016-06-20