IPB70N12S311ATMA1

IPB70N12S3-11 IPI70N12S3-11, IPP70N12S3-11 OptiMOS™-T Power-Transistor Product Summary VDS 120 V RDS(on),max (SMD version) 11.3 mW ID 70 A Features • OptiMOSTM - power MOSFET for automotive applications • N-channel - Enhancement mode • Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested Type Package Marking IPB70N12S3-11 PG-TO263-3-2 3N1211 IPI70N12S3-11 PG-TO262-3-1 3N1211 IPP70N12S3-11 PG-TO220-3-1 3N1211 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V1) Value 70 Unit A 48 Pulsed drain current1) I D,pulse T C=25 °C 280 Avalanche energy, single pulse1) E AS I D=35A 410 mJ Avalanche current, single pulse I AS - 70 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25 °C 125 W Operating and storage temperature T j, T stg - -55 ... +175 °C Rev. 1.1 page 1 2023-06-15 IPB70N12S3-11 IPI70N12S3-11, IPP70N12S3-11 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics1) Thermal resistance, junction - case R thJC - - - 1.2 Thermal resistance, junction ambient, leaded R thJA - - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area2) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 120 - - Gate threshold voltage V GS(th) V DS=V GS, I D=83µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=120V, V GS=0V, T j=25°C - 0.01 0.1 - 1 10 V DS=120V, V GS=0V, T j=125°C1) V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10V, I D=70A - 9.7 11.6 mW V GS=10V, I D=70A, SMD version - 9.4 11.3 Rev. 1.1 page 2 2023-06-15 IPB70N12S3-11 IPI70N12S3-11, IPP70N12S3-11 Parameter Symbol Values Conditions Unit min. typ. max. - 3350 4355 - 940 1222 Dynamic characteristics1) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 105 158 Turn-on delay time t d(on) - 17 - Rise time tr - 8 - Turn-off delay time t d(off) - 25 - Fall time tf - 8 - Gate to source charge Q gs - 18 23 Gate to drain charge Q gd - 16 24 Gate charge total Qg - 51 65 Gate plateau voltage V plateau - 5.5 - V - - 70 A - - 280 V GS=0V, V DS=25V, f =1MHz V DD=20 V, V GS=10 V, I D=70 A, R G=3.5 W pF ns Gate Charge Characteristics1) V DD=96 V, I D=70 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current1) IS Diode pulse current1) I S,pulse Diode forward voltage V SD V GS=0 V, I F=70 A, T j=25 °C 0.6 1 1.2 V Reverse recovery time1) t rr V R=60V, I F=50A, di F/dt =100A/µs - 100 - ns Reverse recovery charge1) Q rr - 265 - nC 1) T C=25°C Defined by design. Not subject to production test. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.1 page 3 2023-06-15 IPB70N12S3-11 IPI70N12S3-11, IPP70N12S3-11 1 Power dissipation 2 Drain current P tot = f(T C); V GS = 10 V I D = f(T C); V GS = 10 V; SMD 150 80 125 60 ID [A] Ptot [W] 100 75 40 50 20 25 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0; SMD Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 100 10 µs 0.5 100 ZthJC [K/W] 100 µs ID [A] 1 ms 0.1 10-1 0.05 0.01 10 10-2 single pulse 10-3 1 0.1 1 10 100 1000 10-5 10-4 10-3 10-2 10-1 100 tp [s] VDS [V] Rev. 1.1 10-6 page 4 2023-06-15 IPB70N12S3-11 IPI70N12S3-11, IPP70N12S3-11 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C; SMD R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS parameter: V GS 400 20 360 10 V 18 320 5.5 V 280 16 RDS(on) [mΩ] 240 ID [A] 7V 200 160 6.5 V 6V 14 6.5 V 12 120 6V 80 7V 5.5 V 40 10 10 V 5V 0 8 0 1 2 3 4 5 0 20 40 VDS [V] 60 80 100 120 ID [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 70 A; V GS = 10 V; SMD parameter: T j α = 0.4 250 21 -55 °C 19 200 17 25 °C RDS(on) [mW] ID [A] 150 175 °C 100 15 13 11 9 50 7 0 3 4 5 6 7 VGS [V] Rev. 1.1 5 -60 -20 20 60 100 140 180 Tj [°C] page 5 2023-06-15 IPB70N12S3-11 IPI70N12S3-11, IPP70N12S3-11 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 Ciss VGS(th) [V] 3 C [pF] 3.5 400 µA 103 80 µA 2.5 Coss 102 2 1.5 Crss 101 1 -60 -20 20 60 100 140 180 0 20 40 60 80 100 120 VDS [V] Tj [°C] 11 Typical forward diode characteristics 12 Typ. avalanche characteristics IF = f(VSD) I AS= f(t AV) parameter: T j parameter: Tj(start) 100 103 25 °C 102 IF [A] IAV [A] 100 °C 175 °C 175 °C 101 25°C °C 25 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.1 150 °C 10 1 0.1 1 10 100 1000 tAV [µs] page 6 2023-06-15 IPB70N12S3-11 IPI70N12S3-11, IPP70N12S3-11 13 Typical avalanche energy 14 Typ. drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 135 1000 800 130 17.5 A VBR(DSS) [V] EAS [mJ] 600 35 A 400 70 A 200 125 120 115 110 0 25 75 125 -55 175 -15 Tj [°C] 25 65 105 145 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 70 A pulsed parameter: V DD 10 V GS 9 Qg 24 V 8 96 V 7 VGS [V] 6 5 V g s(th) 4 3 2 Q g (th) Q sw 1 Q gs 0 0 10 20 30 40 Q gate Q gd 50 Qgate [nC] Rev. 1.1 page 7 2023-06-15 IPB70N12S3-11 IPI70N12S3-11, IPP70N12S3-11 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2023-06-15 IMPORTANT NOTICE Published by The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). Infineon Technologies AG 81726 Munich, Germany © 2023 Infineon Technologies AG All Rights Reserved. Do you have any questions about any aspect of this document? Email: erratum@infineon.com Document reference IPP_B_I70N12S3-11-DataSheet-11-Infineon Rev. 1.1 With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. page 8 For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact the nearest Infineon Technologies Office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 2023-06-15 IPB70N12S3-11 IPI70N12S3-11, IPP70N12S3-11 Revision History Version Revision 1.0 Date 2016-06-20 Changes Final Data Sheet Revision 1.1 2023-06-15 Diagram 8 Typ. drain-source onstate resistance: used α value clarified Revision 1.1 2023-06-15 Corrected diagram 10 typical capacitances Rev. 1.1 page 9 2023-06-15