IPD80R1K4CEATMA1

MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™CE 800VCoolMOS™CEPowerTransistor IPx80R1K4CE DataSheet Rev.2.3 Final PowerManagement&Multimarket 800VCoolMOS™CEPowerTransistor IPD80R1K4CE,IPU80R1K4CE 1Description DPAK CoolMOS™CEisarevolutionarytechnologyforhighvoltagepower MOSFETs.Thehighvoltagecapabilitycombinessafetywithperformance andruggednesstoallowstabledesignsathighestefficiencylevel. CoolMOS™800VCEcomeswithaselectedpackagechoiceofferingthe benefitofreducedsystemcostsandhigherpowerdensitydesigns. IPAK tab tab 2 1 1 2 3 3 Drain Pin 2 Features •Highvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •Lowgatecharge •Loweffectivecapacitances •Qualified according to JEDEC Standard •Pb-freeleadplating;RoHScompliant; halogenfreemoldcompound Gate Pin 1 Source Pin 3 Benefits •Increasedpowerdensitysolutionsduetosmallerpackage •Systemcost/sizesavingsduetoreducedcoolingrequirements •Highersystemreliabilityduetolowoperatingtemperatures Applications •LEDLightingforretrofitapplicationsinQRFlybacktopology Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C 800 V RDS(on),max 1.4 Ω Qg,typ 23 nC ID,pulse 12 A VGS(th),typ 3 V CO(tr),typ 51 pF Type/OrderingCode Package IPD80R1K4CE PG-TO 252 IPU80R1K4CE PG-TO 251 Final Data Sheet Marking 8R1K4CE 2 RelatedLinks see Appendix A Rev. 2.3, 2020-05-20 800VCoolMOS™CEPowerTransistor IPD80R1K4CE,IPU80R1K4CE TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Final Data Sheet 3 Rev. 2.3, 2020-05-20 800VCoolMOS™CEPowerTransistor IPD80R1K4CE,IPU80R1K4CE 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current 1) Values Unit Note/TestCondition 3.9 2.3 A TC=25°C TC=100°C - 12 A TC=25°C - - 170 mJ ID=1.2A;VDD=50V EAR - - 0.14 mJ ID=1.2A;VDD=50V Avalanche current, repetitive IAR - - 1.2 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...640V Gate source voltage VGS -20 -30 - 20 30 V static; AC (f>1 Hz) - - 63 W TC=25°C Min. Typ. Max. ID - - Pulsed drain current 2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive Power dissipation (non FullPAK) TO-252, Ptot TO-251 Operating and storage temperature Tj,Tstg -55 - 150 °C - Continuous diode forward current IS - - 3.9 A TC=25°C Diode pulse current2) IS,pulse - - 12 A TC=25°C dv/dt - - 4 V/ns VDS=0...400V,ISD≤IS,Tj=25°C dif/dt - - 400 A/µs VDS=0...400V,ISD≤IS,Tj=25°C Reverse diode dv/dt 3) Maximum diode commutation speed 3Thermalcharacteristics Table3ThermalcharacteristicsDPAK,IPAK Parameter Symbol Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wave- & reflowsoldering allowed 4) Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 2 °C/W - RthJA - 35 62 - SMD version, device on PCB, minimal footprint °C/W SMD version, device on PCB, 6cm2 cooling area4) Tsold - - 260 °C reflow MSL 1 1) Limited by Tj max. Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 4) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm2 copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling. 2) Final Data Sheet 4 Rev. 2.3, 2020-05-20 800VCoolMOS™CEPowerTransistor IPD80R1K4CE,IPU80R1K4CE 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=0.25mA 3 3.9 V VDS=VGS,ID=0.24mA - 50 10 - µA VDS=800V,VGS=0V,Tj=25°C VDS=800V,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.2 3.2 1.4 - Ω VGS=10V,ID=2.3A,Tj=25°C VGS=10V,ID=2.3A,Tj=150°C Gate resistance RG - 1.2 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 800 - Gate threshold voltage V(GS)th 2.1 Zero gate voltage drain current IDSS Gate-source leakage curent Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 570 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 25 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related 1) Co(er) - 19 - pF VGS=0V,VDS=0...480V Effective output capacitance, time related Co(tr) - 51 - pF ID=constant,VGS=0V,VDS=0...480V Turn-on delay time td(on) - 25 - ns VDD=400V,VGS=0/10V,ID=3.9A, RG=22Ω Rise time tr - 15 - ns VDD=400V,VGS=0/10V,ID=3.9A, RG=22Ω Turn-off delay time td(off) - 72 - ns VDD=400V,VGS=0/10V,ID=3.9A, RG=22Ω Fall time tf - 12 - ns VDD=400V,VGS=10V,ID=3.9A, RG=22Ω Unit Note/TestCondition 2) Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 3 - nC VDD=640V,ID=3.9A,VGS=0to10V Gate to drain charge Qgd - 12 - nC VDD=640V,ID=3.9A,VGS=0to10V Gate charge total Qg - 23 - nC VDD=640V,ID=3.9A,VGS=0to10V Gate plateau voltage Vplateau - 5.5 - V VDD=640V,ID=3.9A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS 2) Final Data Sheet 5 Rev. 2.3, 2020-05-20 800VCoolMOS™CEPowerTransistor IPD80R1K4CE,IPU80R1K4CE Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition 1.2 V VGS=0V,IF=3.9A,Tj=25°C 520 - ns VR=400V,IF=3.9A,diF/dt=100A/µs - 4 - µC VR=400V,IF=3.9A,diF/dt=100A/µs - 12 - A VR=400V,IF=3.9A,diF/dt=100A/µs Min. Typ. Max. VSD - 1 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 6 Rev. 2.3, 2020-05-20 800VCoolMOS™CEPowerTransistor IPD80R1K4CE,IPU80R1K4CE 5Electricalcharacteristicsdiagrams Diagram2:Safeoperatingarea Diagram1:Powerdissipation 102 70 60 101 1 µs 10 µs 100 µs 40 ID[A] Ptot[W] 50 30 20 1 ms 100 10 ms DC 10-1 10 0 0 25 50 75 TC[°C] 100 125 10-2 150 100 101 102 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Max.transientthermalimpedance Diagram4:Typ.outputcharacteristics 1 10 103 15 20 V 12 10 V 0.5 100 ZthJC[K/W] 0.2 9 ID[A] 0.1 0.05 6 0.02 10 -1 6.5 V 0.01 single pulse 6V 5.5 V 3 5V 10-2 10-5 10-4 10-3 tp[s] 10-2 10-1 ZthJC=f(tP);parameter:D=tp/T Final Data Sheet 0 0 5 10 VDS[V] 15 20 25 ID=f(VDS);Tj=25°C;tp=10µs;parameter:VGS 7 Rev. 2.3, 2020-05-20 800VCoolMOS™CEPowerTransistor IPD80R1K4CE,IPU80R1K4CE Diagram5:Typ.outputcharacteristics 6 Diagram6:Typ.drain-sourceon-stateresistance 5.4 20 V 10 V 5.0 ID[A] 4 5.5 V 4.6 3 RDS(on)[Ω] 6V 5 5V 4.2 3.8 10 V 6V 20 V 2 3.4 4.5 V 5.5 V 4V 1 0 4.5 V 5 V 3.0 0 5 10 VDS[V] 15 20 2.6 25 0 2 4 ID[A] 6 ID=f(VDS);Tj=150°C;tp=10µs;parameter:VGS RDS(on)=f(ID);Tj=150°C;parameter:VGS Diagram7:Drain-sourceon-stateresistance Diagram8:Typ.transfercharacteristics 3.20 8 10 15 25 °C 2.80 2.40 10 typ 98 % 1.60 ID[A] RDS(on)[Ω] 2.00 1.20 150 °C 5 0.80 0.40 0.00 -60 -20 20 60 Tj[°C] 100 140 180 RDS(on)=f(Tj);ID=2.3A;VGS=10V Final Data Sheet 0 0 2 4 VGS[V] 6 8 10 ID=f(VGS);|VDS|>2|ID|RDS(on)max;tp=10µs;parameter:Tj 8 Rev. 2.3, 2020-05-20 800VCoolMOS™CEPowerTransistor IPD80R1K4CE,IPU80R1K4CE Diagram9:Typ.gatecharge Diagram10:Forwardcharacteristicsofreversediode 102 10 8 160 V 25°C (98%) 640 V 101 25 °C 150 °C 6 IF[A] VGS[V] 150°C (98%) 4 100 2 0 0 4 8 12 Qgate[nC] 16 20 10-1 24 0.0 0.5 1.0 1.5 VSD[V] VGS=f(Qgate);ID=3.9Apulsed;parameter:VDD IF=f(VSD);tp=10µs;parameter:Tj Diagram11:Avalancheenergy Diagram12:Drain-sourcebreakdownvoltage 180 2.0 960 920 150 880 VBR(DSS)[V] EAS[mJ] 120 90 840 800 60 760 30 0 720 25 50 75 Tj[°C] 100 125 150 EAS=f(Tj);ID=1.2A;VDD=50V Final Data Sheet 680 -60 -20 20 60 Tj[°C] 100 140 180 VBR(DSS)=f(Tj);ID=0.25mA 9 Rev. 2.3, 2020-05-20 800VCoolMOS™CEPowerTransistor IPD80R1K4CE,IPU80R1K4CE Diagram13:Typ.capacitances Diagram14:Typ.Cossstoredenergy 104 5 4 103 Ciss Eoss[µJ] C[pF] 3 102 Coss 2 101 1 Crss 100 0 100 200 VDS[V] 300 400 500 C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0 0 100 200 300 400 VDS[V] 500 600 700 800 Eoss=f(VDS) 10 Rev. 2.3, 2020-05-20 800VCoolMOS™CEPowerTransistor IPD80R1K4CE,IPU80R1K4CE 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt QF IF t dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 IF 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) td(off) tr ton tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VD VDS VDS Final Data Sheet 11 ID VDS Rev. 2.3, 2020-05-20 800VCoolMOS™CEPowerTransistor IPD80R1K4CE,IPU80R1K4CE 7PackageOutlines DIMENSION A A1 b b2 b3 c c2 D D1 E E1 e e1 N H L L3 L4 MILLIMETERS MIN. MAX. 2.16 2.41 0.00 0.15 0.64 0.89 0.65 1.15 4,95 5.50 0.46 0.61 0.40 0.98 5.97 6.22 5.02 5.84 6.35 6.73 4.32 5.50 2.29 4.57 3 9.40 10.48 1.18 1.78 0.89 1.27 0.51 1.02 DOCUMENT NO. Z8B00003328 REVISION 07 SCALE: 10:1 0 1 2mm EUROPEAN PROJECTION ISSUE DATE 01.04.2020 Figure1OutlinePG-TO252,dimensionsinmm Final Data Sheet 12 Rev. 2.3, 2020-05-20 800VCoolMOS™CEPowerTransistor IPD80R1K4CE,IPU80R1K4CE Figure2OutlinePG-TO251,dimensionsinmm/inches Final Data Sheet 13 Rev. 2.3, 2020-05-20 800VCoolMOS™CEPowerTransistor IPD80R1K4CE,IPU80R1K4CE 8AppendixA Table11RelatedLinks • IFXCoolMOSWebpage:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 14 Rev. 2.3, 2020-05-20 800VCoolMOSªCEPowerTransistor IPx80R1K4CE RevisionHistory IPx80R1K4CE Revision:2020-05-26,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2013-06-24 Release of final version 2.1 2013-07-18 updtae to halogen free mold compound 2.2 2016-04-27 Non-halogen free version discontinued 2.3 2020-05-26 Update of the package outlines TO-252 Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 15 Rev.2.3,2020-05-26