IPP129N10NF2SAKMA1

IPP129N10NF2S MOSFET StrongIRFETTM2Power-Transistor PG-TO220-3 tab Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Drain Pin 2, Tab Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 12.9 mΩ ID 52 A Qoss 26 nC QG 19 nC Gate Pin 1 Source Pin 3 Type/OrderingCode Package IPP129N10NF2S PG-TO220-3 Final Data Sheet 1 Marking RelatedLinks 129N10NS - Rev.2.1,2022-06-15 StrongIRFETTM2Power-Transistor IPP129N10NF2S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.1,2022-06-15 StrongIRFETTM2Power-Transistor IPP129N10NF2S 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 52 37 33 12 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=6V,TC=100°C VGS=10V,TA=25°C,RthJA=40°C/W2) - 208 A TA=25°C - - 31 mJ ID=25A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 71 3.8 W TC=25°C TA=25°C,RthJA=40°C/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C - Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 1) Continuous drain current Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 2.1 °C/W - Thermal resistance, junction - ambient, RthJA 6 cm² cooling area2) - - 40 °C/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 62 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.1,2022-06-15 StrongIRFETTM2Power-Transistor IPP129N10NF2S 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 3.8 V VDS=VGS,ID=30µA - 0.1 10 1 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance1) RDS(on) - 11.6 14.2 12.9 16.2 mΩ VGS=10V,ID=30A VGS=6V,ID=15A Gate resistance RG - 0.9 - Ω - gfs 24 - - S |VDS|≥2|ID|RDS(on)max,ID=30A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 100 - Gate threshold voltage VGS(th) 2.2 Zero gate voltage drain current IDSS Gate-source leakage current 2) Transconductance Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 1300 - pF VGS=0V,VDS=50V,f=1MHz Output capacitance Coss - 210 - pF VGS=0V,VDS=50V,f=1MHz Reverse transfer capacitance Crss - 10 - pF VGS=0V,VDS=50V,f=1MHz Turn-on delay time td(on) - 8.8 - ns VDD=50V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 15 - ns VDD=50V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 13 - ns VDD=50V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 3.6 - ns VDD=50V,VGS=10V,ID=30A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics3) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 6.4 - nC VDD=50V,ID=30A,VGS=0to10V Gate charge at threshold Qg(th) - 3.9 - nC VDD=50V,ID=30A,VGS=0to10V Gate to drain charge Qgd - 4.1 - nC VDD=50V,ID=30A,VGS=0to10V Switching charge Qsw - 6.5 - nC VDD=50V,ID=30A,VGS=0to10V Gate charge total Qg - 19 28 nC VDD=50V,ID=30A,VGS=0to10V Gate plateau voltage Vplateau - 4.9 - V VDD=50V,ID=30A,VGS=0to10V Output charge Qoss - 26 - nC VDS=50V,VGS=0V 2) 1) RDS(on) is specified at a distance of 1.8 mm distance to the package body; mounting at a larger distance increases the overall package resistance of approximately 0.04 mOhm/mm per leg. 2) Defined by design. Not subject to production test. 3) See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2022-06-15 StrongIRFETTM2Power-Transistor IPP129N10NF2S Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 51 A TC=25°C - 208 A TC=25°C - 0.93 1.2 V VGS=0V,IF=30A,Tj=25°C trr - 26 - ns VR=50V,IF=30A,diF/dt=500A/µs Qrr - 135 - nC VR=50V,IF=30A,diF/dt=500A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery time Reverse recovery charge Final Data Sheet 5 Rev.2.1,2022-06-15 StrongIRFETTM2Power-Transistor IPP129N10NF2S 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 80 60 70 50 60 40 ID[A] Ptot[W] 50 40 30 30 20 20 10 10 0 0 25 50 75 100 125 150 0 175 0 25 50 TC[°C] 75 100 125 150 175 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 102 10 1 µs 102 10 µs 101 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 ID[A] ZthJC[K/W] 100 µs 101 1 ms 100 DC 100 10 ms 10-1 -1 10 10-2 10-1 100 101 102 103 10-2 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2022-06-15 StrongIRFETTM2Power-Transistor IPP129N10NF2S Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 200 35 10 V 8V 7V 175 30 150 4.5 V 5V 25 6V RDS(on)[mΩ] ID[A] 125 100 6V 75 7V 15 8V 10 50 25 0 20 5 5V 4.5 V 0 1 2 3 4 10 V 0 5 0 20 40 60 VDS[V] 80 ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 200 30 150 25 100 75 175 °C RDS(on)[mΩ] 25 °C 125 ID[A] 120 35 175 175 °C 20 15 10 50 25 °C 5 25 0 100 ID[A] 0 1 2 3 4 5 6 7 VGS[V] 0 3 6 9 12 15 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0 RDS(on)=f(VGS),ID=30A;parameter:Tj 7 Rev.2.1,2022-06-15 StrongIRFETTM2Power-Transistor IPP129N10NF2S Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.4 4.0 3.5 3.0 300 µA 1.6 2.5 VGS(th)[V] RDS(on)(normalizedto25°C) 2.0 1.2 2.0 30 µA 1.5 0.8 1.0 0.4 0.5 0.0 -75 -50 -25 0 25 50 75 0.0 -75 100 125 150 175 200 -50 -25 0 Tj[°C] 25 50 75 100 125 150 175 200 Tj[°C] RDS(on)=f(Tj),ID=30A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Typ.forwardcharacteristicsofreversediode 4 103 10 25 °C 175 °C 103 Ciss 102 IF[A] C[pF] 102 Coss 101 101 Crss 100 0 20 40 60 80 100 100 0.00 0.25 0.50 VDS[V] 1.00 1.25 1.50 1.75 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.75 IF=f(VSD);parameter:Tj 8 Rev.2.1,2022-06-15 StrongIRFETTM2Power-Transistor IPP129N10NF2S Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 20 V 50 V 80 V 8 101 VGS[V] IAV[A] 6 25 °C 100 °C 150 °C 4 0 10 2 10-1 10-1 100 101 102 103 tAV[µs] 0 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=30Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 108 106 VBR(DSS)[V] 104 102 100 98 96 94 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2022-06-15 StrongIRFETTM2Power-Transistor IPP129N10NF2S 5PackageOutlines PACKAGE - GROUP NUMBER: PG-TO220-3-U05 REVISION: 02 DATE: 15.12.2020 MILLIMETERS MIN. MAX. 4.25 4.75 1.40 1.14 2.92 2.47 0.71 0.97 1.14 1.78 0.36 0.61 14.32 15.80 8.39 9.20 11.89 12.80 9.90 10.67 8.10 8.74 2.54 3 6.00 6.70 13.00 14.40 3.56 4.06 3.90 3.54 2.94 2.54 DIMENSIONS A A1 A2 b b1 c D D1 D2 E E1 e N H L L1 øP Q Figure1OutlinePG-TO220-3,dimensionsinmm Final Data Sheet 10 Rev.2.1,2022-06-15 StrongIRFETTM2Power-Transistor IPP129N10NF2S RevisionHistory IPP129N10NF2S Revision:2022-06-15,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2020-12-18 Release of final version 2022-06-15 Skip condition "Operating and storage tempt.", update trr and Qrr, footnotes, Diagram 12 and Avalanche energy. 2.1 Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.1,2022-06-15