IPT004N03L

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-MOSFET,30V IPT004N03L DataSheet Rev.2.0 Final PowerManagement&Multimarket OptiMOSTMPower-MOSFET,30V IPT004N03L 1Description HSOF Features Tab •Optimizedfore-fuseandORingapplication •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant 12 34 56 78 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 0.4 mΩ ID 300 A QOSS 141 nC QG(0V..10V) 252 nC Drain Tab Gate Pin 1 Source Pin 2-8 Type/OrderingCode Package Marking RelatedLinks IPT004N03L PG-HSOF-8-1 004N03L - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.2.0,2014-10-08 OptiMOSTMPower-MOSFET,30V IPT004N03L TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 3 Rev.2.0,2014-10-08 OptiMOSTMPower-MOSFET,30V IPT004N03L 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings at 25 °C Parameter Symbol Values Unit Note/TestCondition 300 300 300 300 72 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=40K/W1) Min. Typ. Max. - Continuous drain current ID - Pulsed drain current2) ID,pulse - - 1200 A TC=25°C Avalanche energy, single pulse3) EAS - - 830 mJ ID=150A Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 300 3.8 W TC=25°C TA=25°C,RthJA=40K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Device on PCB Values Min. Typ. Max. RthJC - - 0.5 K/W - RthJA - - 40 62 K/W 6 cm² cooling area1) minimum footprint 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Final Data Sheet 4 Rev.2.0,2014-10-08 OptiMOSTMPower-MOSFET,30V IPT004N03L 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=10mA - 2.2 V VDS=VGS,ID=250µA - 0.1 10 10 100 µA VDS=30V,VGS=0V,Tj=25°C VDS=30V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.44 0.37 0.5 0.4 mΩ VGS=4.5V,ID=150A VGS=10V,ID=150A Gate resistance RG 1.4 2.7 5.4 Ω - Transconductance gfs 160 320 - S |VDS|>2|ID|RDS(on)max,ID=30A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 30 - Gate threshold voltage VGS(th) 0.7 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 18000 24000 pF VGS=0V,VDS=15V,f=1MHz Output capacitance Coss - 5400 7200 pF VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss - 590 - pF VGS=0V,VDS=15V,f=1MHz Turn-on delay time td(on) - 30 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 17 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 149 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 37 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 40 53 nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge at threshold Qg(th) - 29 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate to drain charge Qgd - 28 36 nC VDD=15V,ID=30A,VGS=0to4.5V Switching charge Qsw - 38 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge total Qg - 122 163 nC VDD=15V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.2 - V VDD=15V,ID=30A,VGS=0to4.5V Gate charge total Qg - 252 336 nC VDD=15V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 105 - nC VDS=0.1V,VGS=0to4.5V Output charge Qoss - 141 188 nC VDD=15V,VGS=0V 1) See ″Gate charge waveforms″ for parameter definition Final Data Sheet 5 Rev.2.0,2014-10-08 OptiMOSTMPower-MOSFET,30V IPT004N03L Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 300 A TC=25°C - 1200 A TC=25°C - 0.83 1 V VGS=0V,IF=150A,Tj=25°C - 100 - nC VR=15V,IF=100A,diF/dt=400A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery charge Qrr Final Data Sheet 6 Rev.2.0,2014-10-08 OptiMOSTMPower-MOSFET,30V IPT004N03L 5Electricalcharacteristicsdiagrams Diagram2:Draincurrent 350 350 300 300 250 250 200 200 ID[A] Ptot[W] Diagram1:Powerdissipation 150 150 100 100 50 50 0 0 40 80 120 160 0 200 0 40 80 TC[°C] 120 160 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 4 101 10 1 µs 103 10 µs 100 µs 100 1 ms 102 ZthJC[K/W] ID[A] 10 ms DC 101 0.5 10-1 0.2 0.1 0.05 10-2 0 10 0.02 0.01 single pulse 10-1 10-1 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.0,2014-10-08 OptiMOSTMPower-MOSFET,30V IPT004N03L Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 1200 0.6 10 V 3.2 V 4.5 V 4V 5V 1000 3.5 V 4V 4.5 V 5V 800 0.4 RDS(on)[mΩ] ID[A] 3V 600 2.8 V 400 7V 8V 10 V 0.3 0.2 200 0 3.5 V 0.5 3.2 V 0.1 0 1 2 0.0 3 0 100 200 VDS[V] 300 400 500 600 700 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 1200 800 700 1000 600 800 gfs[S] ID[A] 500 600 400 300 400 175 °C 200 200 25 °C 100 0 0 1 2 3 4 5 0 0 VGS[V] 80 120 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 8 Rev.2.0,2014-10-08 OptiMOSTMPower-MOSFET,30V IPT004N03L Diagram10:Typ.gatethresholdvoltage 1.0 2.5 0.8 2.0 0.6 1.5 0.4 VGS(th)[V] RDS(on)[mΩ] Diagram9:Drain-sourceon-stateresistance typ 0.2 1 mA 1.0 0.5 0.0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=150A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=1mA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 5 104 10 103 Ciss IF[A] C[pF] 104 Coss 102 25 °C 103 175 °C 10 1 Crss 102 0 5 10 15 20 25 100 0.0 VDS[V] 1.0 1.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.5 IF=f(VSD);parameter:Tj 9 Rev.2.0,2014-10-08 OptiMOSTMPower-MOSFET,30V IPT004N03L Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 103 12 15 V 10 102 24 V 8 25 °C 100 °C VGS[V] 125 °C IAV[A] 6V 101 6 4 2 100 100 101 102 103 0 0 50 tAV[µs] 100 150 200 250 300 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 34 32 VBR(DSS)[V] 30 28 26 24 22 20 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=10mA Final Data Sheet 10 Rev.2.0,2014-10-08 OptiMOSTMPower-MOSFET,30V IPT004N03L 6PackageOutlines 1) partially covered with Mold Flash DIM A b b1 b2 c D D2 E E1 E4 E5 e H H1 H2 H3 H4 N K1 L L1 L2 L4 MILLIMETERS MIN MAX 2.20 2.40 0.70 0.90 9.70 9.90 0.42 0.50 0.40 0.60 10.28 10.58 3.30 9.70 10.10 7.50 8.50 9.46 1.20 (BSC) 11.48 6.55 11.88 6.75 INCHES MIN 0.087 0.028 0.382 0.017 0.016 0.405 0.295 0.335 0.372 0.047 (BSC) 0.452 0.258 2 0 2 4mm EUROPEAN PROJECTION 0.083 ISSUE DATE 20-02-2014 0.051 REVISION 02 0.028 0.024 1.30 0 SCALE 0.468 0.266 0.063 0.70 0.60 1.00 0.398 0.281 0.141 0.128 8 0.165 2.10 DOCUMENT NO. Z8B00169619 0.130 0.382 7.15 3.59 3.26 8 4.18 1.60 MAX 0.094 0.035 0.390 0.020 0.024 0.416 0.039 Figure1OutlinePG-HSOF-8-1 Final Data Sheet 11 Rev.2.0,2014-10-08 OptiMOSTMPower-MOSFET,30V IPT004N03L RevisionHistory IPT004N03L Revision:2014-10-08,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-10-08 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.0,2014-10-08